IGBT module YANGJIE DGW40N120CTH1A with 1200V collector emitter voltage and fast recovery diode included
Key Attributes
Model Number:
DGW40N120CTH1A
Product Custom Attributes
Td(off):
200ns
Pd - Power Dissipation:
375W
Td(on):
60ns
Operating Temperature:
-40℃~+175℃
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
0.05nF
Input Capacitance(Cies):
5.52nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.2V@1.4mA
Gate Charge(Qg):
0.27uC@15V
Pulsed Current- Forward(Ifm):
160A
Reverse Recovery Time(trr):
229ns
Switching Energy(Eoff):
1.38mJ
Turn-On Energy (Eon):
5.13mJ
Mfr. Part #:
DGW40N120CTH1A
Package:
TO-247
Product Description
Product Overview
The DGW40N120CTH1A is a high-performance IGBT with a breakdown voltage of 1200V, designed for high frequency switching applications. It features a maximum junction temperature of 175 and a positive temperature coefficient. This IGBT includes a fast and soft recovery anti-parallel diode, making it suitable for resonant converters, uninterruptible power supplies, and welding converters.
Product Attributes
- Brand: 21yangjie
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Maximum Ratings | ||||||
| Collector-Emitter Breakdown Voltage | VCE | 1200 | V | |||
| Collector Current, limited by Tjmax | IC | TC= 25C | 80 | A | ||
| Collector Current, limited by Tjmax | IC | TC= 100C | 40 | A | ||
| Diode Forward Current, limited by Tjmax | IF | TC= 25C | 80 | A | ||
| Diode Forward Current, limited by Tjmax | IF | TC= 100C | 40 | A | ||
| Continuous Gate-Emitter Voltage | VGE | 20 | V | |||
| Transient Gate-Emitter Voltage | VGE | (tp10s,D<0.010) | 30 | V | ||
| Turn off Safe Operating Area | VCE1200V, Tj 150C | 160 | A | |||
| Pulsed Collector Current | ICM | VGE=15V, tp limited by Tjmax | 160 | A | ||
| Diode Pulsed Current | IFpuls | tp limited by Tjmax | 160 | A | ||
| Power Dissipation | Ptot | Tj=175CTc=25C | 375 | W | ||
| IGBT Discrete Features | ||||||
| High breakdown voltage | VCE | 1200 | V | |||
| Maximum junction temperature | Tj | 175 | ||||
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=40A | 1.85 | V | ||
| Electrical Characteristics of the IGBT | ||||||
| Static Collector-Emitter Breakdown Voltage | BVCES | VGE=0V, IC=250A | 1200 | - | - | V |
| Gate Threshold Voltage | VGE(th) | VGE=VCE, IC=1.4mA | 5.2 | 5.8 | 6.5 | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE=15V, IC=40A, Tj=25C | 1.85 | 2.15 | V | |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE=15V, IC=40A, Tj=125C | 2.15 | - | V | |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE=15V, IC=40A, Tj=150C | 2.25 | - | V | |
| Zero Gate Voltage Collector Current | ICES | VCE=1200V, VGE=0V, Tj= 25C | 0.25 | - | mA | |
| Zero Gate Voltage Collector Current | ICES | VCE=1200V, VGE=0V, Tj=150C | - | 4 | mA | |
| Gate-Emitter Leakage Current | IGES | VCE= 0V, VGE= 20V | - | 100 | nA | |
| Dynamic Characteristics of the IGBT | ||||||
| Input Capacitance | Cies | VCE= 25V, VGE= 0V, f = 1MHz | 5.52 | - | nF | |
| Reverse Transfer Capacitance | Cres | 0.05 | - | nF | ||
| Gate Charge | QG | VCC=600V,IC=40A, VGE=15V | 0.27 | - | uC | |
| Operating Conditions | ||||||
| Operating Junction Temperature | Tj | -40 | +175 | C | ||
| Storage Temperature | Ts | -55 | +150 | C | ||
| Soldering Temperature | wave soldering 1.6mm from case for 10s | 260 | C | |||
| Electrical Characteristics of the Diode | ||||||
| Diode Forward Voltage | VF | IF= 40A, Tj= 25C | 1.85 | 2.05 | V | |
| Diode Forward Voltage | VF | IF= 40A, Tj= 125C | 1.75 | - | V | |
| Diode Forward Voltage | VF | IF= 40A, Tj= 150C | - | 2.70 | V | |
| Switching Characteristics, Inductive Load (Tj= 25) | ||||||
| Turn-on Delay Time | td(on) | VCC= 600V, IC=40A, VGE= -5V~15V, Rg=20 | 60 | - | ns | |
| Rise Time | tr | 106 | - | ns | ||
| Turn-on Energy | Eon | 5.13 | - | mJ | ||
| Turn-off Delay Time | td(off) | 200 | - | ns | ||
| Fall Time | tf | 129 | - | ns | ||
| Turn-off Energy | Eoff | 1.38 | - | mJ | ||
| Switching Characteristics, Inductive Load (Tj= 125) | ||||||
| Turn-on Delay Time | td(on) | VCC= 600V, IC=40A, VGE= -5V~15V, Rg=20 | 52 | - | ns | |
| Rise Time | tr | 94 | - | ns | ||
| Turn-on Energy | Eon | 5.18 | - | mJ | ||
| Turn-off Delay Time | td(off) | 210 | - | ns | ||
| Fall Time | tf | 187 | - | ns | ||
| Turn-off Energy | Eoff | 2.02 | - | mJ | ||
| Switching Characteristics, Inductive Load (Tj= 150) | ||||||
| Turn-on Delay Time | td(on) | VCC= 600V, IC=40A, VGE= -5v~15V, Rg=20 | 49 | - | ns | |
| Rise Time | tr | 87 | - | ns | ||
| Turn-on Energy | Eon | 5.24 | - | mJ | ||
| Turn-off Delay Time | td(off) | 223 | - | ns | ||
| Fall Time | tf | 210 | - | ns | ||
| Turn-off Energy | Eoff | 2.23 | - | mJ | ||
| Diode Dynamic Characteristics (Tj= 25) | ||||||
| Reverse Recovery Current | Irr | IF=40A, VR=600V, di/dt= -520A/s | 11 | - | A | |
| Diode reverse recovery time | trr | 229 | - | ns | ||
| Reverse Recovery Charge | Qrr | 1.43 | - | uC | ||
| Reverse Recovery Energy | Erec | 0.36 | - | mJ | ||
| Diode Dynamic Characteristics (Tj= 125) | ||||||
| Reverse Recovery Current | Irr | IF=40A,VR=600V di/dt= -520A/s | 14 | - | A | |
| Diode reverse recovery time | trr | 307 | - | ns | ||
| Reverse Recovery Charge | Qrr | 3.58 | - | uC | ||
| Reverse Recovery Energy | Erec | 1.10 | - | mJ | ||
| Diode Dynamic Characteristics (Tj= 150) | ||||||
| Reverse Recovery Current | Irr | IF=40A,VR=600V di/dt= -520A/s | 16 | - | A | |
| Diode reverse recovery time | trr | 352 | - | ns | ||
| Reverse Recovery Charge | Qrr | 4.25 | - | uC | ||
| Reverse Recovery Energy | Erec | 1.26 | - | mJ | ||
| Thermal Resistance | ||||||
| IGBT Thermal Resistance, Junction - Case | R(j-c) | 0.40 | K/W | |||
| Diode Thermal Resistance, Junction - Case | R(j-c) | 0.65 | K/W | |||
| Thermal Resistance, Junction - Ambient | R(j-a) | 40 | K/W | |||
2411220011_YANGJIE-DGW40N120CTH1A_C20600423.pdf
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