IGBT Module MG35P12P3 S M323 Featuring Low VCEsat and Fast Soft Recovery Diode for Power Electronics
Key Attributes
Model Number:
MG35P12P3
Product Custom Attributes
Mfr. Part #:
MG35P12P3
Product Description
MG35P12P3 S-M323 IGBT Module
The MG35P12P3 S-M323 is a high-performance IGBT module designed for various power electronics applications. It features low switching losses, low VCE(sat) with a positive temperature coefficient, and includes a fast and soft recovery anti-parallel FWD. Its low inductance case and high short circuit capability make it suitable for demanding environments. The module utilizes isolated heatsink technology (DBC) for improved thermal management and can operate at a maximum junction temperature of 175.
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Certifications: RoHS Compliant
Technical Specifications
| Part Number | Application | VCES (V) | IC (A) | VCE(sat) Max (V) @ 35A, 15V, 25C | Ptot Max (W) @ 25C | Tjmax (C) | RJC per IGBT-inverter (K/W) | RJC per Diode-inverter (K/W) | RJC per IGBT-brake-chopper (K/W) | RJC per Diode-chopper (K/W) | RJC per Diode-rectifier (K/W) |
| MG35P12P3 S-M323 | IGBT-inverter | 1200 | 35 | 2.50 | 210 | 175 | 0.70 | 1.30 | 0.70 | 1.80 | 1.35 |
| MG35P12P3 S-M323 | Diode-inverter | 1200 | 35 | - | - | 175 | 0.70 | 1.30 | 0.70 | 1.80 | 1.35 |
| MG35P12P3 S-M323 | IGBT-brake-chopper | 1200 | 35 | 2.50 | 210 | 175 | 0.70 | 1.30 | 0.70 | 1.80 | 1.35 |
| MG35P12P3 S-M323 | Diode-brake-chopper | 1200 | 15 | - | - | 175 | 0.70 | 1.30 | 0.70 | 1.80 | 1.35 |
| MG35P12P3 S-M323 | Diode-rectifier | 1600 | 35 (Avg) | - | - | 175 | 0.70 | 1.30 | 0.70 | 1.80 | 1.35 |
2512011028_YANGJIE-MG35P12P3_C2942702.pdf
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