High Current Power MOSFET XTX BRP100N220P6 N-channel Enhancement Mode for Robotics and Motor Control

Key Attributes
Model Number: BRP100N220P6
Product Custom Attributes
Mfr. Part #:
BRP100N220P6
Package:
TOLL-8
Product Description

BRP100N220P6 N-channel Enhancement Mode Power MOSFET

The BRP100N220P6 is an N-channel enhancement mode Power MOSFET from XTX Technology Inc., designed for high-performance applications. It features ultra-low RDS(ON) and low gate charge, making it suitable for motor driving in power tools, e-vehicles, and robotics, as well as current switching in DC/DC and AC/DC converters, and power management systems. The device is lead-free and comes in a TOLL-8 package.

Product Attributes

  • Brand: XTX Technology Inc.
  • Product Line: BRP100N220P6
  • Package: TOLL-8
  • Certifications: Lead Free
  • Origin: China (implied by company name and contact info)

Technical Specifications

Symbol Parameter Condition Min Typ Max Unit
Absolute Maximum Ratings
VDS Drain-to-Source Voltage 100 V
VGS Gate-to-Source Voltage ±20 V
ID Continuous Drain Current TC = 25°C 220 A
ID Continuous Drain Current TC = 100°C 146 A
IDM Pulsed Drain Current (1) 880 A
EAS Single Pulsed Avalanche Energy (2) 648 mJ
PD Power Dissipation, TC = 25°C 500 W
RθJC Thermal Resistance, Junction to Case 0.25 °C/W
TJ, TSTG Junction & Storage Temperature Range -55 +150 °C
Electrical Characteristics (TJ=25°C, unless otherwise noted)
Off Characteristics
V(BR)DSS Drain-Source Breakdown Voltage ID = 250µA, VGS = 0V 100 - - V
IDSS Zero Gate Voltage Drain Current VDS = 80V, VGS = 0V - - 1 µA
IGSS Gate-Body Leakage Current VDS = 0V, VGS = ±20V - - ±100 nA
On Characteristics
VGS(TH) Gate Threshold Voltage VDS = VGS, ID = 250uA 2.0 3.0 4.0 V
RDS(ON) Static Drain-Source ON-Resistance(3) VGS = 10V, ID = 30A - 1.2 1.45
Dynamic Characteristics
Ciss Input Capacitance VGS = 0V, VDS = 50V, f = 1MHz - 13258 - pF
Coss Output Capacitance - 2058 - pF
Crss Reverse Transfer Capacitance - 111 - pF
Rg Gate Resistance VGS = 0V, VDS = 0V, f = 1MHz - 3.6 - Ω
Qg Total Gate Charge VDS = 50V, ID = 30A - 240 - nC
Qgs Gate Source Charge - 60 - nC
Qgd Gate Drain("Miller") Charge - 59 - nC
Switching Characteristics
td(on) Turn-On Delay Time VGS = 10V, VDS = 50V, ID = 30A, RGEN = 4.5Ω - 33 - ns
tr Turn-On Rise Time - 69 - ns
td(off) Turn-Off Delay Time - 172 - ns
tf Turn-Off Fall Time - 105 - ns
Drain-Source Diode Characteristics
IS Continuous Source Current - - 220 A
VSD Forward on voltage VGS = 0V, IS = 30A - - 1.3 V
Trr Reverse Recovery Time IF = 30A, di/dt = 100A/us - 124 - ns
Qrr Reverse Recovery Charge - 388 - nC

Notes

1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature.
2. EAS condition: Starting TJ=25°C, VDD=50V, VG=10V, L=0.5mH, IAS=50A
3. Pulse Test: Pulse Width ≤300µs, Duty Cycle ≤0.5%.

Package Marking and Ordering Information

OPN: BRP100N220P6
Marking: P100N220
Package: TOLL-8
Quantity: 2000pcs/Reel

Marking Information

1st Line: XTX Logo
2nd Line: Part Number (P100N220)
3rd Line: Date Code (XXXX) - XX: Year, XX: Week (01 to 53)

Detail Package Outline Drawing (TOLL-8)

SYMBOL MILLIMETERS MIN NOM MAX
A 2.20 2.30 2.40
b 0.60 0.70 0.80
b1 1.10 1.20 1.30
b2 0.26 0.36 0.51
C 0.40 0.50 0.60
D 10.30 10.40 10.50
D1 3.20 3.30 3.40
D2 4.08 4.18 4.28
D3 0.53 0.63 0.73
D4 7.25 7.35 7.50
E 9.80 9.90 10.00
E1 9.70 9.80 9.90
E2 8.70 8.80 8.90
E3 8.85 8.95 9.05
e 1.20 BSC
H 11.50 11.70 11.90
L 0.50 0.60 0.70
L1 0.60 0.70 0.80
L2 0.05 0.10 0.20
L3 1.45 1.65 1.85
L4 0.90 1.10 1.30
P 2.00 3.00 4.00
R 3.00 3.10 3.20
θ 11°
θ1

2509261615_XTX-BRP100N220P6_C51966734.pdf

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