Durable YANGJIE MG300HF12LEC2 IGBT module with high short circuit capability and low switching losses
Key Attributes
Model Number:
MG300HF12LEC2
Product Custom Attributes
Pd - Power Dissipation:
2kW
Td(off):
288ns
Td(on):
105ns
Operating Temperature:
-40℃~+125℃
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
1.2nF
Input Capacitance(Cies):
19.3nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5V@12mA
Gate Charge(Qg):
3.4uC
Pulsed Current- Forward(Ifm):
600A
Switching Energy(Eoff):
8.3mJ
Turn-On Energy (Eon):
33.5mJ
Mfr. Part #:
MG300HF12LEC2
Package:
C2
Product Description
MG300HF12LEC2 S-M292 IGBT Module
The MG300HF12LEC2 S-M292 is a high-speed IGBT module featuring NPT technology, designed for high-frequency applications. It offers low switching losses, high short circuit capability (10s), and includes an ultra-fast & soft recovery anti-parallel FWD. Its low inductance and maximum junction temperature of 150 make it suitable for demanding environments.
Product Attributes
- Brand: Yangjie
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Symbol | Conditions | Value | Unit |
| IGBT Absolute Maximum Ratings | ||||
| Collector-Emitter Voltage | VCES | VGE=0V, IC =1mA, Tvj=25 | 1200 | V |
| Continuous Collector Current | IC | Tc=80 | 300 | A |
| Repetitive Peak Collector Current | ICRM | tp=1ms | 600 | A |
| Gate-Emitter Voltage | VGES | Tvj=25 | ±20 | V |
| Total Power Dissipation | Ptot | Tc=25, Tvjmax=150 | 2000 | W |
| IGBT Characteristic Values | ||||
| Gate-emitter Threshold Voltage | VGE(th) | VGE=VCE, IC =12mA,Tvj=25 | 5.0-6.5 | V |
| Collector-Emitter Cut-off Current | ICES | VCE=1200V,VGE=0V,Tvj=25 | 1.0 | mA |
| Collector-Emitter Saturation Voltage | VCE(sat) | Ic=300A,VGE=15V, Tvj=25 | 3.0-3.5 | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | Ic=300A,VGE=15V, Tvj=125 | 3.8 | V |
| Gate Charge | QG | 3.4 | uC | |
| Input Capacitance | Cies | VCE=25V,VGE =0V, f=1MHz,Tvj=25 | 19.3 | nF |
| Reverse Transfer Capacitance | Cres | 1.2 | nF | |
| Gate-Emitter leakage current | IGES | VCE=0 V, VGE=20V,Tvj = 25 | 400 | nA |
| Turn-on Delay Time | td(on) | IC =300 A, VCE = 600 V, VGE = ± 15V, RGON = 3.3Ω, RGOFF =1.7Ω, Tvj=25 | 105 | ns |
| Rise Time | tr | IC =300 A, VCE = 600 V, VGE = ± 15V, RGON = 3.3Ω, RGOFF =1.7Ω, Tvj=25 | 80 | ns |
| Turn-off Delay Time | td(off) | IC =300 A, VCE = 600 V, VGE = ± 15V, RGON = 3.3Ω, RGOFF =1.7Ω, Tvj=25 | 288 | ns |
| Fall Time | tf | IC =300 A, VCE = 600 V, VGE = ± 15V, RGON = 3.3Ω, RGOFF =1.7Ω, Tvj=25 | 25 | ns |
| Energy Dissipation During Turn-on Time | Eon | IC =300 A, VCE = 600 V, VGE = ± 15V, RGON = 3.3Ω, RGOFF =1.7Ω, Tvj=25 | 33.5 | mJ |
| Energy Dissipation During Turn-off Time | Eoff | IC =300 A, VCE = 600 V, VGE = ± 15V, RGON = 3.3Ω, RGOFF =1.7Ω, Tvj=25 | 8.3 | mJ |
| Turn-on Delay Time | td(on) | IC =300 A, VCE = 600 V, VGE = ± 15V, RGON = 3.3Ω, RGOFF =1.7Ω, Tvj=125 | 114 | ns |
| Rise Time | tr | IC =300 A, VCE = 600 V, VGE = ± 15V, RGON = 3.3Ω, RGOFF =1.7Ω, Tvj=125 | 87 | ns |
| Turn-off Delay Time | td(off) | IC =300 A, VCE = 600 V, VGE = ± 15V, RGON = 3.3Ω, RGOFF =1.7Ω, Tvj=125 | 332 | ns |
| Fall Time | tf | IC =300 A, VCE = 600 V, VGE = ± 15V, RGON = 3.3Ω, RGOFF =1.7Ω, Tvj=125 | 29 | ns |
| Energy Dissipation During Turn-on Time | Eon | IC =300 A, VCE = 600 V, VGE = ± 15V, RGON = 3.3Ω, RGOFF =1.7Ω, Tvj=125 | 46.7 | mJ |
| Energy Dissipation During Turn-off Time | Eoff | IC =300 A, VCE = 600 V, VGE = ± 15V, RGON = 3.3Ω, RGOFF =1.7Ω, Tvj=125 | 11.8 | mJ |
| SC Data | Isc | Tp≤10us,VGE=15V, Tvj=150,Vcc=600V, VCEM≤1200V | 2200 | A |
| Diode Absolute Maximum Ratings | ||||
| Repetitive Peak Reverse Voltage | VRRM | Tvj=25 | 1200 | V |
| Continuous DC Forward Current | IF | 300 | A | |
| Repetitive Peak Forward Current | IFRM | tp=1ms | 600 | A |
| Diode Characteristic Values | ||||
| Forward Voltage | VF | IF=300A,Tvj=25 | 1.70-2.0 | V |
| Forward Voltage | VF | IF=300A,Tvj=125 | 1.75 | V |
| Recovered Charge | Qrr | IF =300 A, VR=600V, -diF/dt =3600A/us, Tvj=25 | 16.8 | uC |
| Peak Reverse Recovery Current | Irr | IF =300 A, VR=600V, -diF/dt =3600A/us, Tvj=25 | 240 | A |
| Reverse Recovery Energy | Erec | IF =300 A, VR=600V, -diF/dt =3600A/us, Tvj=25 | 10.2 | mJ |
| Recovered Charge | Qrr | IF =300 A, VR=600V, -diF/dt =3600A/us, Tvj=125 | 36.5 | uC |
| Peak Reverse Recovery Current | Irr | IF =300 A, VR=600V, -diF/dt =3600A/us, Tvj=125 | 290 | A |
| Reverse Recovery Energy | Erec | IF =300 A, VR=600V, -diF/dt =3600A/us, Tvj=125 | 20.3 | mJ |
| Module Characteristics | ||||
| Isolation voltage | Visol | t=1min,f=50Hz | 2500 | V |
| Maximum Junction Temperature | Tjmax | 150 | ||
| Operating Junction Temperature | Tvj op | -40-125 | ||
| Storage Temperature | Tstg | -40-125 | ||
| Thermal Resistance Junction-to Case | RJC | per IGBT | 0.06 | K/W |
| Thermal Resistance Junction-to Case | RJC | per Diode | 0.10 | K/W |
| Thermal Resistance Case-to Sink | RCS | Conductive grease applied | 0.035 | K/W |
| Module Electrodes Torque | Mt | Recommended(M6) | 3.0-5.0 | N·m |
| Module-to-Sink Torque | Ms | Recommended(M6) | 3.0-5.0 | N·m |
| Weight of Module | G | 315 | g | |
2411220012_YANGJIE-MG300HF12LEC2_C20602003.pdf
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