Robust IGBT module YANGJIE MG450HF12TFC2 offering 1200V collector emitter voltage and 450A continuous current capacity

Key Attributes
Model Number: MG450HF12TFC2
Product Custom Attributes
Mfr. Part #:
MG450HF12TFC2
Package:
C2
Product Description

MG450HF12TFC2 S-M442 IGBT Module

The MG450HF12TFC2 S-M442 is a high-performance IGBT module designed for motion/servo control, high-frequency switching applications, UPS, and welding machines. It features low Vce(sat) with Trench technology, low switching losses (especially Eoff), a positive temperature coefficient for Vce(sat), high short circuit capability (10us), and includes an ultra-fast & soft recovery anti-parallel FWD. The module boasts a low inductance package and a maximum junction temperature of 175.

Product Attributes

  • Brand: yangjie
  • Certifications: RoHS Compliant

Technical Specifications

ParameterSymbolConditionsValueUnitMin.Typ.Max.
IGBT Absolute Maximum Ratings
Collector-Emitter VoltageVCESVGE=0V, IC =1mA, Tvj=251200V
Continuous Collector CurrentICTc=100450A
Repetitive Peak Collector CurrentICRMtp=1ms900A
Gate-Emitter VoltageVGESTvj=25±20V
Total Power DissipationPtotTc=25 Tvjmax=1752307W
IGBT Characteristic Values
Gate-emitter Threshold VoltageVGE(th)VGE=VCE, IC=12mA,Tvj=25V5.25.86.4
Collector-Emitter Cut-off CurrentICESVCE=1200V,VGE=0V,Tvj=25mA1.0
Collector-Emitter Saturation VoltageVCE(sat)Ic=450A,VGE=15V, Tvj=25V2.252.70
Collector-Emitter Saturation VoltageVCE(sat)Ic=450A,VGE=15V, Tvj=125V2.55
Gate ChargeQGuC3.13
Input CapacitanceCiesVCE=25V,VGE =0V, f=1MHz,Tvj=25nF19
Reverse Transfer CapacitanceCresnF0.8
Gate-Emitter leakage currentIGESVCE=0 V, VGE=20V,Tvj = 25nA400
Turn-on Delay Timetd(on)IC=450 A VCE=600 V VGE=± 15V RG=1.8Ω Tvj=25126ns
Rise Timetr37ns
Turn-off Delay Timetd(off)448ns
Fall Timetf73ns
Energy Dissipation During Turn-on TimeEon16.5mJ
Energy Dissipation During Turn-off TimeEoff20.4mJ
Turn-on Delay Timetd(on)IC=450 A VCE=600 V VGE=± 15V RG=1.8Ω Tvj=125173ns
Rise Timetr61ns
Turn-off Delay Timetd(off)517ns
Fall Timetf123ns
Energy Dissipation During Turn-on TimeEon22.3mJ
Energy Dissipation During Turn-off TimeEoff31.7mJ
SC DataIscTp≤10us, VGE=15V, Tvj=150, Vcc=600V, VCEM≤1200V1800A
Diode Absolute Maximum Ratings
Repetitive Peak Reverse VoltageVRRMTvj=251200V
Continuous DC Forward CurrentIF450A
Repetitive Peak Forward CurrentIFRMtp=1ms900A
Diode Characteristic Values
Forward VoltageVFIF=450A,Tvj=25V2.10
Forward VoltageVFIF=450A,Tvj=125V2.15
Recovered ChargeQrrIF=450 A VR=600V -diF/dt=6500A/us Tvj=2537uC
Peak Reverse Recovery CurrentIrr351A
Reverse Recovery EnergyErec16.7mJ
Recovered ChargeQrrIF=450 A VR=600V -diF/dt=6500A/us Tvj=12578uC
Peak Reverse Recovery CurrentIrr435A
Reverse Recovery EnergyErec32.8mJ
Module Characteristics
Isolation voltageVisolt=1min,f=50Hz2500V
Maximum Junction TemperatureTjmax175
Operating Junction TemperatureTvj op-40150
Storage TemperatureTstg-40125
Thermal Resistance Junction-to CaseRJCper IGBT0.065K/W
Thermal Resistance Junction-to CaseRJCper Diode0.13K/W
Thermal Resistance Case-to SinkRCSConductive grease applied0.033K/W
Module Electrodes TorqueMtRecommended(M6)3.05.0Nm
Module-to Sink TorqueMsRecommended(M6)3.05.0Nm
Weight of ModuleG315g

2411220012_YANGJIE-MG450HF12TFC2_C20602006.pdf

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