Power MOSFET XYD X8P5N030TLE2 N channel device featuring low gate charge and low Ciss for switching
Key Attributes
Model Number:
X8P5N030TLE2
Product Custom Attributes
Mfr. Part #:
X8P5N030TLE2
Package:
TO-252-2L
Product Description
X8P5N030TLE2 N-CHANNEL MOSFET
The X8P5N030TLE2 is an N-CHANNEL MOSFET from Xiamen XYDFAB Integrated Circuit Co., Ltd. It features extremely low on-resistance, fast switching, excellent low Ciss, and low gate charge, making it suitable for applications such as synchronous rectification for AC/DC quick chargers, battery management, and uninterruptible power supplies (UPS).
Product Attributes
- Brand: Xiamen XYDFAB Integrated Circuit Co., Ltd.
- Model: X8P5N030TLE2
- Package: TO-252-2L
- Packaging: Tape and reel
Technical Specifications
| Parameter | Symbol | Values | Unit | Note/Test Conditions | ||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | 30 | V | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | ||
| Continuous Drain Current | ID | 70 | A | TC=25 | ||
| 45 | A | TC=100 | ||||
| Pulsed Drain Current | IDM | 280 | A | |||
| Single Pulse Avalanche Energy | EAS | 85 | mJ | L=0.5mH,VD=24V, TC=25 | ||
| Maximum Power Dissipation | PD | 71 | W | TC=25 | ||
| 2.9 | W | TA=25 | ||||
| Operating Junction and Storage Temperature Range | Tj,TSTG | -50 | 150 | |||
| Thermal Characteristics | ||||||
| Thermal resistance, Junction to Case | Rth(J-c) | 1.76 | - | /W | ||
| Thermal resistance, Junction to Ambient | Rth(J-A) | 42 | - | /W | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V,ID=250A | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | A | VDS=30V,VGS=0V | ||
| Gate-Body Leakage Current,Forward | IGSSF | 100 | nA | VGS=20V,VDS=0V | ||
| Gate-Body Leakage Current,Reverse | IGSSR | -100 | nA | VGS=-20V,VDS=0V | ||
| Gate-Source Threshold Voltage | VGS(th) | 1.0 | 2.4 | V | VDS=VGS,ID=250A | |
| Drain-Source On-State Resistance | RDS(on) | 6.9 | 8.5 | m | VGS=10V,ID=15A | |
| 10.3 | 15 | m | VGS=4.5V,ID=15A | |||
| Gate Resistance | Rg | 2.2 | - | VGS=0V, VDS =0V, f=1MHz | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | 1295 | pF | VDS=25V,VGS=0V,f=1.0MHZ | ||
| Output Capacitance | Coss | 130 | pF | |||
| Reverse Transfer Capacitance | Crss | 107 | pF | |||
| Turn-On Delay Time | td(on) | 8 | ns | VDD=15V,RG=10,VGS=10V,ID=20A | ||
| Turn-On Rise Time | tr | 102 | ns | |||
| Turn-Off Delay Time | td(off) | 46 | ns | |||
| Turn-Off Fall Time | tf | 31 | ns | |||
| Gate Charge Characteristics | ||||||
| Total Gate Charge | Qg | 36 | nC | VDS=24V,ID=20A,VGS=10V | ||
| Gate-Source Charge | Qgs | 5 | ||||
| Gate-Drain Charge | Qg d | 5 | ||||
| Reverse Diode Characteristics | ||||||
| Continuous Diode Forward Current | IS | 70 | A | |||
| Pulsed Diode Forward Current | ISM | 280 | A | |||
| Diode Forward Voltage | VSD | 1.2 | V | IS=15A,VGS=0V | ||
| Reverse Recovery Time | trr | 19 | ns | VDS=20V,VGS=0V,IS=15A,di/dt=100A/s | ||
| Reverse Recovery Charge | Qrr | 15 | nC | |||
2509251450_XYD-X8P5N030TLE2_C51952877.pdf
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