General purpose NPN transistor XZT S8050 ideal for amplification and switching in electronic systems
Key Attributes
Model Number:
S8050
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
DC Current Gain:
200@100mA,1V
Transition Frequency(fT):
150MHz
Vce Saturation(VCE(sat)):
600mV@500mA,50mA
Type:
NPN
Pd - Power Dissipation:
300mW
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
S8050
Package:
SOT-23
Product Description
Product Overview
The S8050 is an NPN bipolar junction transistor designed for general-purpose applications. It offers a complementary function to the S8550 transistor and is suitable for various electronic circuits requiring amplification or switching capabilities, with a maximum collector current of 0.5A.
Product Attributes
- Brand: X T ELECTRONICS
- Marking: J3Y
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Collector-base breakdown voltage | V(BR)CBO | IC= 100A, IE=0 | 40 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=1mA, IB=0 | 25 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=100A, IC=0 | 5 | V | ||
| Collector cut-off current | ICBO | VCB=40 V , IE=0 | 0.1 | A | ||
| Collector cut-off current | ICEO | VCE=20V , I B=0 | 0.1 | A | ||
| Emitter cut-off current | IEBO | VEB= 5V , IC=0 | 0.1 | A | ||
| DC current gain (Rank L, J) | hFE(1) | VCE=1V, I C= 50mA | 120 | 400 | ||
| DC current gain (Rank H) | hFE(1) | VCE=1V, I C= 50mA | 200 | 350 | ||
| DC current gain | hFE(2) | VCE=1V, I C= 500mA | 50 | |||
| Collector-emitter saturation voltage | VCE(sat) | IC=500 mA, IB= 50mA | 0.6 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=500 mA, IB= 50mA | 1.2 | V | ||
| Transition frequency | fT | VCE=6V, I C= 20mA f=30MHz | 150 | MHz | ||
| Collector-Base Voltage | VCBO | 40 | V | |||
| Collector-Emitter Voltage | VCEO | 25 | V | |||
| Emitter-Base Voltage | VEBO | 5 | V | |||
| Collector Current | IC | 500 | mA | |||
| Collector Power Dissipation | PC | 300 | mW | |||
| Thermal Resistance Junction To Ambient | RJA | 417 | /W | |||
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55 | +150 |
2410121527_XZT-S8050_C5805825.pdf
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