Split gate trench MOSFET transistor YANGJIE YJG88G12A designed for high current power switching and heat dissipation
Key Attributes
Model Number:
YJG88G12A
Product Custom Attributes
Drain To Source Voltage:
120V
Current - Continuous Drain(Id):
88A
Operating Temperature -:
-55℃~+150℃
RDS(on):
9.6mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
28pF
Number:
1 N-channel
Output Capacitance(Coss):
924pF
Pd - Power Dissipation:
120W
Input Capacitance(Ciss):
4.619nF
Gate Charge(Qg):
72nC@10V
Mfr. Part #:
YJG88G12A
Package:
PDFN5060-8L
Product Description
Product Overview
The YJG88G12A is an N-Channel Enhancement Mode Field Effect Transistor featuring Split gate trench MOSFET technology for low RDS(ON) and excellent heat dissipation. It is designed for power switching applications, hard switched and high frequency circuits, and uninterruptible power supply systems.
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Model: YJG88G12A
- Technology: Split gate trench MOSFET
- Moisture Sensitivity Level: 1
- Flammability Rating: UL 94 V-0
- Certifications: RoHS Compliant
- Origin: China (implied by company name and website)
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-source Voltage | VDS | 120 | V | |||
| Gate-source Voltage | VGS | 20 | V | |||
| Drain Current | ID | TC=25 | 88 | A | ||
| Drain Current | ID | Tc=100 | 56 | A | ||
| Pulsed Drain Current | IDM | 352 | A | |||
| Avalanche energy | EAS | TJ=25, IAS=20A | 400 | mJ | ||
| Total Power Dissipation | PD | Tc=25 | 120 | W | ||
| Total Power Dissipation | PD | Tc=100 | 48 | W | ||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | +150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS= 0V, ID=250A | 120 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=120V,VGS=0V | - | - | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS= 20V, VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=250A | 1.0 | 2.0 | 3.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=20A | - | 6.4 | 7.6 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V, ID=20A | - | 7.6 | 9.6 | m |
| Diode Forward Voltage | VSD | IS=20A,VGS=0V | - | - | 1.3 | V |
| Forward Transconductance | gFS | VDS=5V, ID=20A | - | 80 | - | S |
| Gate resistance | RG | f=1MHz | - | 0.9 | - | |
| Maximum Body-Diode Continuous Current | IS | - | - | 88 | A | |
| Dynamic Parameters | ||||||
| Input Capacitance | Ciss | VDS=50V,VGS=0V,f=1MHZ | - | 4619 | - | pF |
| Output Capacitance | Coss | - | 924 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 28 | - | pF | |
| Switching Parameters | ||||||
| Total Gate Charge | Qg | VGS=10V,VDS=50V,ID=20A | - | 72.0 | - | nC |
| Gate-Source Charge | Qgs | - | 19.5 | - | nC | |
| Gate-Drain Charge | Qg d | - | 8.2 | - | nC | |
| Reverse Recovery Chrage | Qrr | IF=20A, di/dt=100A/us | - | 195 | - | nC |
| Reverse Recovery Time | trr | - | 86 | - | ns | |
| Turn-on Delay Time | tD(on) | VGS=10V,VDD=50V,ID=20A RGEN=2.2 | - | 19 | - | ns |
| Turn-on Rise Time | tr | - | 36 | - | ns | |
| Turn-off Delay Time | tD(off) | - | 45 | - | ns | |
| Turn-off fall Time | tf | - | 45 | - | ns | |
2410121457_YANGJIE-YJG88G12A_C20605816.pdf
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