High Density Cell Design N Channel Enhancement Mode Transistor YANGJIE YJD120N04A for Power Electronics
Key Attributes
Model Number:
YJD120N04A
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
120A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.8mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
360pF@20V
Number:
1 N-channel
Output Capacitance(Coss):
436pF
Input Capacitance(Ciss):
4.645nF@20V
Pd - Power Dissipation:
110W
Gate Charge(Qg):
49nC@4.5V
Mfr. Part #:
YJD120N04A
Package:
TO-252
Product Description
Product Overview
The YJD120N04A is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power LV MOSFET technology. It offers excellent heat dissipation due to its package design and a high-density cell design for low RDS(ON). This transistor is suitable for applications such as DC-DC Converters, power management functions, and backlighting.
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Origin: China
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-source Voltage | VDS | 40 | V | |||
| Gate-source Voltage | VGS | ±20 | V | |||
| Drain Current | ID | TC=25 | 120 | A | ||
| Drain Current | ID | TC=100 | 76 | A | ||
| Pulsed Drain Current | IDM | 390 | A | |||
| Total Power Dissipation | PD | @ TC=25 B | 110 | W | ||
| Total Power Dissipation | PD | @ TC=100 B | 44 | W | ||
| Total Power Dissipation | PD | @ TA=25 C | 6.2 | W | ||
| Single Pulse Avalanche Energy | EAS | D | 272 | mJ | ||
| Thermal Resistance Junction-to-Case | RJC | 1.14 | / W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 20 | / W | |||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | +150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS= 0V, ID=250A | 40 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=40V,VGS=0V | 1 | A | ||
| Gate-Body Leakage Current | IGSS | VGS= ±20V, VDS=0V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=250A | 1.0 | 1.5 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= 10V, ID=15A | 2.8 | 3.5 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= 4.5V, ID=10A | 4.0 | 4.8 | m | |
| Diode Forward Voltage | VSD | IS=15A,VGS=0V | 0.80 | 1.2 | V | |
| Maximum Body-Diode Continuous Current | IS | 120 | A | |||
| Gate resistance | Rg | =1 MHz, Open drain | 3.1 | |||
| Dynamic Parameters | ||||||
| Input Capacitance | Ciss | VDS=20V,VGS=0V,f=1MHZ | 4645 | pF | ||
| Output Capacitance | Coss | 436 | pF | |||
| Reverse Transfer Capacitance | Crss | 360 | pF | |||
| Switching Parameters | ||||||
| Total Gate Charge | Qg(10V) | VGS=10V,VDS=20V,ID=20A | 102 | nC | ||
| Total Gate Charge | Qg(4.5V) | 49 | nC | |||
| Gate-Source Charge | Qgs | 15.8 | nC | |||
| Gate-Drain Charge | Qgd | 21.9 | nC | |||
| Reverse Recovery Charge | Qrr | IF=20A, di/dt=100A/us | 7.4 | nC | ||
| Reverse Recovery Time | trr | 22.3 | ns | |||
| Turn-on Delay Time | tD(on) | VGS=10V, VDD=20V , ID=20A RGEN=3 | 12 | ns | ||
| Turn-on Rise Time | tr | 54 | ns | |||
| Turn-off Delay Time | tD(off) | 120 | ns | |||
| Turn-off fall Time | tf | 80 | ns | |||
2410121456_YANGJIE-YJD120N04A_C919582.pdf
Related Products
High surge current fast recovery rectifier diode ZHIDE MURS220 with plastic molded epoxy UL 94V 0 flame retardant
Product OverviewThe MURS220-MURS2100 series are plastic encapsulated epitaxial fast recovery rectifier diodes designed for high-reliability applications. They feature low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering (260/10 seconds). The ...
General purpose Zener diode YANGJIE BZX584B4V3 with cathode polarity and RoHS compliant certification
Product OverviewThe BZX584B2V4 THRU BZX584B36V series are high-reliability Zener diodes featuring very sharp reverse characteristics and low reverse current levels. They are designed for general-purpose applications and are available with Zener voltages ranging from 2.4V to 36V.Product AttributesBra...
Small Signal Zener Diodes Including YANGJIE BZX584C3V9Q for General Purpose Voltage Regulation
Small Signal Zener DiodesThe BZX584C2V4Q thru BZX584C47VQ series are small signal Zener diodes designed for general regulation functions. These diodes feature an epoxy casing that meets UL-94 V-0 flammability rating and is halogen-free. They are moisture sensitivity level 1 and AEC-Q101 qualified ...
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
