Industrial motor control and lighting triac YONGYUTAI BT136S-800E with high bidirectional transient voltage capability
Key Attributes
Model Number:
BT136S-800E
Product Custom Attributes
Holding Current (Ih):
20mA
Current - Gate Trigger(Igt):
10mA
Voltage - On State(Vtm):
1.7V
Average Gate Power Dissipation (PG(AV)):
500mW
Current - On State(It(RMS)):
4A
Peak Off - State Voltage(Vdrm):
800V
Current - Surge(Itsm@f):
27A
SCR Type:
1 TRIAC
Gate Trigger Voltage (Vgt):
1.5V
Mfr. Part #:
BT136S-800E
Package:
TO-252
Product Description
Product Overview
Glass passivated triacs designed for high bidirectional transient and blocking voltage capability, along with excellent thermal cycling performance. Ideal for motor control, industrial and domestic lighting, heating, and static switching applications.
Product Attributes
- Brand: BT136S-xxxE
- Type: Snubberless™ and logic level (3 Quadrants) / Standard (4 Quadrants)
- Encapsulation: Plastic
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Repetitive peak off-state voltages | VRRM VDRM | -500 | 500 | V | ||
| -600 | 600 | |||||
| -800 | 800 | |||||
| On-State RMS Current | IT(RMS) | full sine wave; Tmb ≤ 107 °C | 4 | A | ||
| Non-repetitive peak on-state current | ITSM | full sine wave; Tj = 25 °C prior to surge | t = 20 ms | 25 | A | |
| t = 16.7 ms | 27 | A | ||||
| I2t for fusing | I2t | t = 10 ms | 3.1 | A2s | ||
| Repetitive rate of rise of on-state current after triggering | dIT/dt | ITM = 3 A; IG = 0.2 A; dIG/dt = 0.2 A/µs | 50 | A/µs | ||
| Peak gate current | IGM | 2 | A | |||
| Peak Gate Voltage | VGM | 5 | V | |||
| Peak gate power | PGM | 5 | W | |||
| Average gate power | PG(AV) | over any 20 ms period | 0.5 | W | ||
| Operating junction temperature | TJ | 125 | °C | |||
| Storage Temperature | Tstg | -40 | 150 | °C | ||
| Thermal resistance junction to solder point | Rth j-sp | full or half cycle | 3.0 | K/W | ||
| Thermal resistance junction to ambient | Rth j-a | pcb mounted; | 75 | K/W | ||
| Gate trigger current | IGT | VD = 12 V, IT = 0.1 A | -- | 10 | mA | |
| VD = 12 V, IGT = 0.1 A | - | 15 | ||||
| Latching current | IL | VD = 12 V, IGT = 0.1 A | 20 | mA | ||
| Holding current | IH | VD = 12 V, IGT = 0.1 A | - | 15 | mA | |
| 20 | ||||||
| On-state voltage | VT | IT = 5A | 1.4 | 1.7 | V | |
| Gate trigger voltage | VGT | VD = 12 V; IT = 0.1 A | 0.7 | 1.5 | V | |
| VD = 400 V; IT = 0.1 A; Tj = 125 °C | 0.25 | 0.4 | ||||
| Off-state leakage current | ID | VD = VDRM(max); Tj = 125 °C | 0.5 | mA | ||
| Critical rate of rise of off-state voltage | dVD/dt | VDM =67% VDRM(max); Tj = 125 °C exponential waveform; gate open circuit | 50 | V/µs | ||
| Gate controlled turn-on time | tgt | ITM = 6 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/µs; | 2 | µs |
2508111740_YONGYUTAI-BT136S-800E_C50201832.pdf
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