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quality Slkor SMUN5211DW factory
quality Slkor SMUN5211DW factory

Slkor SMUN5211DW

Key Attributes
Model Number: SMUN5211DW
Product Custom Attributes
DC Current Gain:
35@5mA,10V
Current - Collector(Ic):
100mA
Resistor Ratio:
1.2
Number:
2 NPN (Pre-Biased)
Pd - Power Dissipation:
385mW
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
SMUN5211DW
Package:
SOT-363
Product Description

Product Overview

The BRT (Bias Resistor Transistor) integrates a single transistor with a monolithic bias network, consisting of a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network, simplifying circuit design, reducing board space, and decreasing component count. The SMUN5211DW model houses two BRT devices in a SOT-363 package, ideal for low-power surface mount applications where board space is limited.

Certifications: Material complies with RoHS requirements.

Product Name

Dual NPN Bias Resistor Transistors

Model

SMUN5211DW

Package Type

SOT-363

Device Marking

7A

Resistor Values

R1: 10 K, R2: 10 K

Resistor Ratio

0.8 - 1.2

Shipping Quantity

3000/Tape&Reel

ParameterSymbolMin.Max.UnitNotes
Collector-Base VoltageVCBO-50VdcCommon for Q1 and Q2
Collector-Emitter VoltageVCEO-50VdcCommon for Q1 and Q2
Collector CurrentIC-100mAdcCommon for Q1 and Q2
Total Device Dissipation (One Junction Heated)PD-187mWTA= 25C, FR-4 @ Minimum Pad
Total Device Dissipation (One Junction Heated)PD-256mWTA= 25C, FR-4 @ 1.0 x 1.0 inch Pad
Thermal Resistance Junction-to-Ambient (One Junction Heated)JA-670C/WFR-4 @ Minimum Pad
Thermal Resistance Junction-to-Ambient (One Junction Heated)JA-490C/WFR-4 @ 1.0 x 1.0 inch Pad
Thermal Resistance Junction-to-Lead (One Junction Heated)JL-250C/WFR-4 @ Minimum Pad
Thermal Resistance Junction-to-Lead (One Junction Heated)JL-385C/WFR-4 @ 1.0 x 1.0 inch Pad
Total Device Dissipation (Both Junctions Heated)PD-2.0mW/CDerate above 25C, FR-4 @ Minimum Pad
Total Device Dissipation (Both Junctions Heated)PD-3.0mW/CDerate above 25C, FR-4 @ 1.0 x 1.0 inch Pad
Thermal Resistance Junction-to-Ambient (Both Junctions Heated)JA-493C/WFR-4 @ Minimum Pad
Thermal Resistance Junction-to-Ambient (Both Junctions Heated)JA-325C/WFR-4 @ 1.0 x 1.0 inch Pad
Thermal Resistance Junction-to-Lead (Both Junctions Heated)JL-188C/WFR-4 @ Minimum Pad
Thermal Resistance Junction-to-Lead (Both Junctions Heated)JL-208C/WFR-4 @ 1.0 x 1.0 inch Pad
Junction and Storage TemperatureTJ, Tstg-55+150C-
DC Current GainhFE35--VCE = 10 V, IC = 5 mA
Collector Base Cutoff CurrentICBO-100nAVCB = 50 V
Collector Emitter Cutoff CurrentICEO-500nAVCE = 50 V
Emitter Base Cutoff CurrentIEBO-0.5mAVEB = 6 V
Collector Base Breakdown VoltageV(BR)CBO50-VIC = 10 A
Collector Emitter Breakdown VoltageV(BR)CEO50-VIC = 2 mA
Collector Emitter Saturation VoltageVCEsat-0.25VIC = 10 mA, IB = 0.3 mA
Output Voltage (on)VOL-0.2VVCC = 5 V, VB = 2.5 V, RL = 1 K
Output Voltage (off)VOH4.9-VVCC = 5 V, VB = 0.5 V, RL = 1 K
Input ResistorR1713K-

2303300930_Slkor-SMUN5211DW_C5375293.pdf
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