Slkor 2P4M-SL
Key Attributes
Model Number:
2P4M-SL
Product Custom Attributes
Mfr. Part #:
2P4M-SL
Package:
TO-252
Product Description
Product Overview
Function: PNPN four-layer silicon unidirectional device. Gate sensitive trigger.
Advantages: P-type to through diffusion isolation; mesa glass passivation process; back multi-layer metal electrode; RoHS compliant.
Applications: Motorcycle igniters, gasoline engine igniters, LED light controllers.
Brand SLKOR
Product Name 2P4M-SL
Package Type TO-252
Certifications RoHS
Diode Type Unidirectional Thyristor Chip
| Symbol | Parameter | Condition | Min | Typical | Max | Unit |
|---|---|---|---|---|---|---|
| IT(AV) | On-state average current | 2 | A | |||
| VDRM / VRRM | Repetitive peak off-state voltage | 600/600 | V | |||
| IGT | Gate trigger current | VD=6V, RL=100, RGK=1k | 10 | 200 | A | |
| VGT | Gate trigger voltage | VD=12V, RL=100, RGK=1k | 0.8 | V | ||
| VGD | Gate non-trigger voltage | VD=1/2VDRM ,RGK=1k, Tj=110 | 0.2 | V | ||
| IH | Holding current | VD=24V,RGK=1k,ITM=4A, Tj=25 | 1 | 3 | mA | |
| IL | Latching current | IG=1.2IGT | 4 | mA | ||
| dVD/dt | Critical rate of rise of off-state voltage | VD=2/3VDRM , RGK=1k,Tj=110 | 10 | V/s | ||
| VTM | On-state voltage drop | ITM=4A | 1.55 | V | ||
| IDRM / IRRM | Repetitive peak off-state current | VD=VDRM/VRRM ,Tj=25 | 5 | A | ||
| IDRM / IRRM | Repetitive peak off-state current | VD=VDRM/VRRM ,Tj=110 | 100 | A | ||
| ITSM | Non-repetitive surge on-state current | Half sine wave, Tj (init)=25, tp=10ms | 25 | A | ||
| I2t | I2t value | Sinusoidal pulse, tp=10ms | 1.7 | A2s | ||
| dIT/dt | Critical rate of rise of on-state current | IG=2*IGT , tr10ns, F=120HZ , Tj=110 | 50 | A/s | ||
| IGM | Peak gate current | tp=20s, Tj=110 | 0.3 | A | ||
| PGM | Peak gate power | tp=20s, Tj=110 | 0.5 | W | ||
| PG(AV) | Average gate power | Tj=110 | 0.1 | W | ||
| TSTG | Storage temperature | -40 | 150 | |||
| Tj | Operating junction temperature | -40 | 110 | |||
| Rth(j-c) | Thermal resistance junction to case (AC) | TO-252 | 6.5 | /W | ||
| Rth(j-a) | Thermal resistance junction to ambient | S=0.5cm2 TO-252 | 70 | /W |
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