Slkor BTB16-800B

Key Attributes
Model Number: BTB16-800B
Product Custom Attributes
Holding Current (Ih):
50mA
Operating Temperature:
-40℃~+125℃
Current - Gate Trigger(Igt):
50mA
Voltage - On State(Vtm):
1.5V
Average Gate Power Dissipation (PG(AV)):
-
Current - On State(It(RMS)):
16A
Peak Off - State Voltage(Vdrm):
800V
SCR Type:
-
Gate Trigger Voltage (Vgt):
1.5V
Mfr. Part #:
BTB16-800B
Package:
TO-263
Product Description

Product Overview

The BTA16/BTB16 Series are TRIACs designed for 3-quadrant and 4-quadrant applications. They are suitable for controlling AC power in various consumer electronics and industrial applications.

Key Features:

  • Repetitive Peak Off-State Voltage up to 1000V
  • RMS On-State Current of 16A
  • Gate Trigger Voltage (VGT) 1.5V
  • Available in 3 or 4 Quadrants
  • Multiple package options: TO-220A (Insulated), TO-220B (Non-Insulated), TO-220F (Insulated), TO-263

Applications:

Washing machines, vacuum cleaners, massagers, solid-state relays, AC motor speed regulation, and more.

Brand

SLKOR Micro

Series

BTA16/BTB16

Type

TRIAC

Quadrants

3 Quadrants / 4 Quadrants

Package Types

TO-220A (Insulated), TO-220B (Non-Insulated), TO-220F (Insulated), TO-263

Symbol Parameter Conditions BTA16/BTB16-600 BTA16/BTB16-800 Unit
VDRM, VRRM Repetitive Peak Off-State Voltage 800 1000 V
IT(RMS) R.M.S On-State Current Tc=110C 16 16 A
ITSM Surge On-State Current tp=10ms 170 / 180 170 / 180 A
It It for fusing tp=10ms 116 116 As
PG(AV) Average Gate Power Dissipation Tj=125C 1 1 W
IGM Peak Gate Current tp=20s, Tj=125C 4 4 A
Tj Operating Junction Temperature -40 ~ 125 -40 ~ 125 C
TSTG Storage Temperature -40 ~ 150 -40 ~ 150 C
Symbol Parameter Test Conditions Value Unit
IDRM Repetitive Peak Off-State Current Tj=25C 5 uA
IDRM Repetitive Peak Off-State Current Tc=125C 1 mA
IRRM Repetitive Peak Reverse Current Tc=25C 5 uA
IRRM Repetitive Peak Reverse Current Tc=125C 1 mA
VTM Forward "on" voltage IT=23A, tp=380s 1.5 V
VGT Gate trigger voltage VD=12V, RL=30 1.5 V
di/dt Critical rate of rise of on-state current I,II,III F=100Hz, IG=2xIGT, tr100ns 50 A/s
di/dt Critical rate of rise of on-state current IV 10 A/s
IGT Gate trigger current I,II,III VD=12V, RL=30 10 / 25 / 50 / 25 / 50 mA
IGT Gate trigger current IV 50 / 100 mA
IH Holding current IT=0.2A 25 / 35 / 50 / 25 / 50 mA
VGD Gate non-trigger voltage VD=VDRM, TJ=125C, RL=3.3K 0.2 V
dv/dt Critical-rate of rise of commutation voltage TJ=125C, VD=2/3VDRM, Gate 100 / 400 / 1000 / 200 / 400 V/s

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