N Channel MOSFET 60V 20A A Power microelectronics AP20N06D featuring low gate charge and conduction
Key Attributes
Model Number:
AP20N06D
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
20A
RDS(on):
40mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
46pF@15V
Number:
1 N-channel
Pd - Power Dissipation:
31.3W
Input Capacitance(Ciss):
-
Gate Charge(Qg):
19nC@10V
Mfr. Part #:
AP20N06D
Package:
TO-252-3
Product Description
Product Overview
The AP20N06D is a 60V N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, with the capability to operate with gate voltages as low as 4.5V. This MOSFET is ideally suited for battery protection and other switching applications.
Product Attributes
- Brand: APM Microelectronics (implied by product ID and company name)
- Origin: Taiwan ()
- Product ID: AP20N06D
Technical Specifications
| Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| General Features | |||||
| VDS | 60 | V | |||
| ID | 20 | A | |||
| RDS(ON) | VGS=10V | < 40 | m | ||
| Absolute Maximum Ratings | |||||
| VDS | (TC=25 unless otherwise noted) | 60 | V | ||
| VGS | 20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V | 20 | A | ||
| ID@TC=100 | Continuous Drain Current, VGS @ 10V | 13 | A | ||
| ID@TA=25 | Continuous Drain Current, VGS @ 10V | 5 | A | ||
| ID@TA=70 | Continuous Drain Current, VGS @ 10V | 4 | A | ||
| IDM | Pulsed Drain Current | 40 | A | ||
| EAS | Single Pulse Avalanche Energy | 22 | mJ | ||
| IAS | Avalanche Current | 21 | A | ||
| PD@TC=25 | Total Power Dissipation | 31.3 | W | ||
| PD@TA=25 | Total Power Dissipation | 2 | W | ||
| TSTG | Storage Temperature Range | -55 | 150 | ||
| TJ | Operating Junction Temperature Range | -55 | 150 | ||
| RJA | Thermal Resistance Junction-ambient | 62 | /W | ||
| RJC | Thermal Resistance Junction-Case | 4 | /W | ||
| Electrical Characteristics | |||||
| BVDSS | Drain-Source Breakdown Voltage (VGS=0V , ID=250uA) | 60 | V | ||
| RDS(ON) | Static Drain-Source On-Resistance (VGS=10V , ID=15A) | 33 | 40 | m | |
| RDS(ON) | Static Drain-Source On-Resistance (VGS=4.5V , ID=7A) | 40 | 50 | m | |
| VGS(th) | Gate Threshold Voltage (VGS=VDS , ID =250uA) | 1.0 | 2.5 | V | |
| IDSS | Drain-Source Leakage Current (VDS=48V , VGS=0V , TJ=25) | 1 | uA | ||
| IGSS | Gate-Source Leakage Current (VGS=20V , VDS=0V) | 100 | nA | ||
| gfs | Forward Transconductance (VDS=5V , ID=15A) | 25.3 | S | ||
| Qg | Total Gate Charge (10V) (VDS=48V , VGS=10V , ID=15A) | 19 | nC | ||
| Ciss | Input Capacitance (VDS=15V , VGS=0V , f=1MHz) | 1027 | pF | ||
| Coss | Output Capacitance (VDS=15V , VGS=0V , f=1MHz) | 65 | pF | ||
| Crss | Reverse Transfer Capacitance (VDS=15V , VGS=0V , f=1MHz) | 46 | pF | ||
| IS | Continuous Source Current (VG=VD=0V , Force Current) | 20 | A | ||
| VSD | Diode Forward Voltage (VGS=0V , IS=1A , TJ=25) | 1.2 | V | ||
| Applications | |||||
| Application | |||||
| Battery protection | |||||
| Load switch | |||||
| Uninterruptible power supply | |||||
| Package Marking and Ordering Information | |||||
| Product ID | Pack Marking | Qty(PCS) | |||
| AP20N06D | AP20N06D XXXX YYYY | 2500 | |||
2205071516_A-Power-microelectronics-AP20N06D_C3011324.pdf
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