P Channel MOSFET Load Switch SOT 23 Package Featuring ALJ SI2305 for Portable Device Power Management

Name: P Channel MOSFET Load Switch SOT 23 Package Featuring ALJ SI2305 for Portable Device Power Management
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: SI2305
Availability: InStock

Key Attributes

Model Number: SI2305

Product Custom Attributes

Drain To Source Voltage:

20V

Current - Continuous Drain(Id):

Operating Temperature -:

RDS(on):

90mΩ@1.8V

Gate Threshold Voltage (Vgs(th)):

900mV@250uA

Type:

P-Channel

Reverse Transfer Capacitance (Crss@Vds):

190pF

Output Capacitance(Coss):

290pF

Pd - Power Dissipation:

350mW

Input Capacitance(Ciss):

740pF

Gate Charge(Qg):

15nC@4.5V

Mfr. Part #:

SI2305

Package:

SOT-23

Product Description

Product Overview

The SI2305 is a P-Channel MOSFET in a SOT-23 plastic-encapsulated package, designed for load switching in portable devices and DC/DC converters. It features TrenchFET Power MOSFET technology, offering efficient power management capabilities.

Product Attributes

Brand: SHENZHEN LONG JING MICRO-ELECTRONICS CO., LTD.
Model: SI2305
Package Type: SOT-23
Moisture Sensitivity: Level 3 per J-STD-020

Technical Specifications

Symbol	Parameter	Test Conditions	Min	Typ	Max	Unit
Maximum Ratings (Ta=25C unless otherwise specified)
VDSS	Drain-Source voltage				-20	V
VGSS	Gate-Source voltage				12	V
ID	Continuous Drain Current				-6.0	A
IS	Continuous Source-Drain Diode Current				-0.8	A
PD	Maximum Power Dissipation				0.35	W
RJA	Thermal Resistance from Junction to Ambient (t10s)				357	C/W
TJ	Junction Temperature				150	C
TSTG	Storage Temperature		-50	~+150		C
Electrical Characteristics (TJ=25C unless otherwise specified)
V(BR)DSS	Drain-Source Breakdown Voltage	VGS = 0V, ID = -250A	-20			V
VGS(th)	Gate-Threshold Voltage	VDS = VGS, ID = -250A	-0.5	-0.9		V
lGSS	Gate-body Leakage current	VDS = 0V, VGS = 12V			100	nA
IDSS	Zero Gate Voltage Drain Current	VDS = -20V, VGS = 0V			-1	A
RDS(on)	Drain-Source On-Resistance	VGS = -4.5V, ID = -3.5A		30	45	m
		VGS = -2.5V, ID = -3.0A		40	60	m
		VGS = -1.8V, ID = -2.0A		60	90	m
gfs	Forward Trans conductance	VDS = -5V, ID = -4.1A		6		S
Dynamic Characteristics
Ciss	Input Capacitance	VGS = 0V, VDS = -4V, f = 1.0MHz		740		pF
Coss	Output Capacitance	VGS = 0V, VDS = -4V, f = 1.0MHz		290		pF
Crss	Reverse Transfer Capacitance	VGS = 0V, VDS = -4V, f = 1.0MHz		190		pF
Qg	Total Gate Charge	VDS = -4V,VGS = -4.5V, ID = -4.1A		7.8	15	nC
Qgs	Gate-Source Charge	VDS = -4V,VGS = -2.5V,ID = -4.1A		1.2		nC
Qgd	Gate-Drain Charge	VDS = -4V,VGS = -2.5V,ID = -4.1A		1.6		nC
Rg	Gate resistance	f =1MHz		1.4	7
td(on)	Turn-On Delay Time	VDD = -4V,RL = 1.2, ID -3.3A, VGEN = -4.5V,Rg = 1		13	20	ns
		VDD = -4V,RL = 1.2, ID -3.3A, VGEN = -8V,Rg = 1		5	10	ns
		tr	Rise Time	VDD = -4V,RL = 1.2, ID -3.3A, VGEN = -4.5V,Rg = 1		35	53	ns
		tr	Rise Time	VDD = -4V,RL = 1.2, ID -3.3A, VGEN = -8V,Rg = 1		11	17	ns
td(off)	Turn-Off Delay Time	VDD = -4V,RL = 1.2, ID -3.3A, VGEN = -4.5V,Rg = 1		32	48	ns
		VDD = -4V,RL = 1.2, ID -3.3A, VGEN = -8V,Rg = 1		22	33	ns
		tf	Fall Time	VDD = -4V,RL = 1.2, ID -3.3A, VGEN = -4.5V,Rg = 1		10	20	ns
		tf	Fall Time	VDD = -4V,RL = 1.2, ID -3.3A, VGEN = -8V,Rg = 1		16	24	ns
Drain-Source Body Diode Characteristics
IS	Continuous Source-Drain Diode Current	TC = 25C			-1.4	A
ISM	Pulsed Diode Forward Current				-10	A
VSD	Body diode voltage	IF = -3.3A		-1.2		V

Note:

1. Pulse Test: Pulse Width 300s, Duty Cycle 2%.
2. Guaranteed by design, not subject to production testing.
3. These parameters have no way to verify.

Soldering Parameters:

Reflow Condition Pb Free assembly

Parameter	Min	Max	Unit
Pre Heat Temperature (Ts(min))	150		C
Temperature (Ts(max))	200		C
Time (min to max) (ts )	60	190	secs
Average ramp up rate (Liquidus Temp) (TL) to peak		5C/second
Reflow Temperature (TL) (Liquidus)	217		C
Time (tL)	60	150	seconds
Temperature (tp )	260+0/-5	C
Time within actual peak Temperature (tp )	20	40	seconds
Ramp-down Rate		5C/second	max
Time 25C to peak Temperature (TP)	8	minutes Max.

Note: Do not exceed 280C

2410121632_ALJ-SI2305_C22751458.pdf

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