Durable Ampleon BLF9G38-10GU transistor designed for mobile broadband and broadcast RF power systems
Key Attributes
Model Number:
BLF9G38-10GU
Product Custom Attributes
Mfr. Part #:
BLF9G38-10GU
Package:
SOT-975C
Product Description
Ampleon RF Power Transistors
Ampleon is a leading provider of high-performance RF power solutions, leveraging decades of RF leadership and application know-how. With a global footprint and a commitment to innovation, Ampleon offers a comprehensive portfolio of LDMOS and GaN RF power transistors designed to meet the demanding requirements of various industries, including mobile broadband, broadcast, industrial, scientific, medical, aerospace, and defense. Our products are engineered for high efficiency, exceptional ruggedness, and superior performance, enabling customers to amplify the future of RF power.
Product Attributes
- Brand: Ampleon
- Origin: Netherlands (Headquarters)
- Technology Focus: LDMOS, GaN
- Core Values: Focus, Excellence, Velocity
- ITAR-Free: Yes (for Aerospace & Defense products)
Technical Specifications
| Product Type / Series | Application Area | Frequency Range | Key Technologies | Typical Voltage (VDS) | Key Features |
|---|---|---|---|---|---|
| LDMOS RF Power Transistors | Mobile Broadband (Base Stations, Small Cells, MIMO) | 0.4 GHz - 3.8 GHz | LDMOS (Gen9, Gen10) | 28 V - 50 V | High efficiency, Doherty designs (PAD), MMICs, OMP packages, enhanced VBW |
| LDMOS RF Power Transistors | Broadcast (FM/HDR/DAB Radio, UHF/D-TV, VHF/D-TV) | 0 MHz - 1600 MHz | LDMOS (Gen6HV, XR2) | 50 V | High power density, Ultra-Wideband (UWB) Doherty, eXtremely Rugged (XR) |
| LDMOS RF Power Transistors | Industrial, Scientific, Medical (ISM) | 0 MHz - 1600 MHz | LDMOS (Gen6XR) | 50 V | High efficiency, robustness, thermal stability, extreme ruggedness (VSWR > 65:1) |
| LDMOS RF Power Transistors | RF Energy (Cooking, Lighting, Heating, Drying, Ignition) | 0 MHz - 2.45 GHz | LDMOS | 32 V | High efficiency, controllability, thermal stability, up to 1200 W power levels |
| LDMOS & GaN RF Power Transistors | Aerospace & Defense (Radar, ECM, Milcom) | Sub-1 GHz - 18 GHz | LDMOS (Gen6HV, Gen10), GaN HEMT | 28 V - 50 V | SWaP optimization, high linearity, high power, ruggedness, ITAR-free |
| GaN RF Power Transistors | Wireless Infrastructure, Radar, ISM, A&D | DC - 6 GHz (50V), DC - 12 GHz (30V) | GaN HEMT | 30 V, 50 V | Best-in-class linearity, high power density, high temperature operation, Doherty support |
| RF Power Transistor Packages | Various applications | N/A | Air-Cavity Ceramic (ACC), Air-Cavity Plastic (ACP), Overmolded Plastic (OMP) | N/A | Influences cost-efficiency and performance; various outlines available |
Note: Specific product details, including part numbers and detailed specifications, are available on the Ampleon website and in the product catalog.
2312080138_Ampleon-BLF9G38-10GU_C6131959.pdf
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