switching N Channel Enhancement Mode MOSFET A Power microelectronics AP120N06P with low gate charge and RDSON
Key Attributes
Model Number:
AP120N06P
Product Custom Attributes
Drain To Source Voltage:
65V
Current - Continuous Drain(Id):
125A
Operating Temperature -:
-55℃~+150℃
RDS(on):
5.6mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
306pF
Number:
1 N-channel
Output Capacitance(Coss):
521pF
Input Capacitance(Ciss):
3.135nF
Pd - Power Dissipation:
172W
Gate Charge(Qg):
77nC@10V
Mfr. Part #:
AP120N06P
Package:
TO-220-3L
Product Description
Product Overview
The AP120N06P/T is an N-Channel Enhancement Mode MOSFET from APM Microelectronics, utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, suitable for operation with gate voltages as low as 10V. This device is designed for battery protection and other switching applications, providing high continuous drain current and low on-resistance.
Product Attributes
- Brand: APM Microelectronics ()
- Technology: Advanced Trench Technology
- Mode: N-Channel Enhancement Mode
Technical Specifications
| Model | Description | Package | VDS (V) | ID (A) | RDS(ON) (m @ VGS=10V) | Package Marking | Quantity (PCS) |
|---|---|---|---|---|---|---|---|
| AP120N06P | N-Channel Enhancement Mode MOSFET | TO-220-3L | 65 | 125 | < 5.6 (Typ: 4.8) | AP120N06P XXX YYYY | 1000 |
| AP120N06T | N-Channel Enhancement Mode MOSFET | TO-263-3L | 65 | 125 | < 5.6 (Typ: 4.8) | AP120N06T XXX YYYY | 800 |
Electrical Characteristics (@ TJ=25, unless otherwise noted)
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| V(BR)DSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250A | 65 | 72 | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS=60V, VGS=0V | - | - | 1.0 | A |
| IGSS | Gate to Body Leakage Current | VDS=0V, VGS=20V | - | - | 100 | nA |
| VGS(th) | Gate Threshold Voltage | VDS=VGS, ID=250A | 2.0 | 2.8 | 4.0 | V |
| RDS(on) | Static Drain-Source on-Resistance | VGS=10V, ID=55A | - | 4.8 | 5.6 | m |
| Ciss | Input Capacitance | VDS=30V, VGS=0V, f=1.0MHz | - | 3135 | - | pF |
| Coss | Output Capacitance | VDS=30V, VGS=0V, f=1.0MHz | - | 521 | - | pF |
| Crss | Reverse Transfer Capacitance | VDS=30V, VGS=0V, f=1.0MHz | - | 306 | - | pF |
| Qg | Total Gate Charge | VDS=30V, ID=55A, VGS=10V | - | 77 | - | nC |
| Qgs | Gate-Source Charge | VDS=30V, ID=55A, VGS=10V | - | 18 | - | nC |
| Qgd | Gate-Drain(Miller) Charge | VDS=30V, ID=55A, VGS=10V | - | 30 | - | nC |
| td(on) | Turn-on Delay Time | VDS=30V, ID=55A, RG=1.8, VGS=10V | - | 15 | - | ns |
| tr | Turn-on Rise Time | VDS=30V, ID=55A, RG=1.8, VGS=10V | - | 89 | - | ns |
| td(off) | Turn-off Delay Time | VDS=30V, ID=55A, RG=1.8, VGS=10V | - | 36 | - | ns |
| tf | Turn-off Fall Time | VDS=30V, ID=55A, RG=1.8, VGS=10V | - | 91 | - | ns |
| IS | Maximum Continuous Drain to Source Diode ForwardCurrent | - | - | - | 123 | A |
| ISM | Maximum Pulsed Drain to Source Diode Forward Current | - | - | - | 492 | A |
| VSD | Drain to Source Diode Forward Voltage | VGS=0V, IS=30A | - | - | 1.2 | V |
| trr | Body Diode Reverse Recovery Time | IF=550A, dI/dt=100A/s | - | 32 | - | ns |
| Qrr | Body Diode Reverse Recovery Charge | IF=550A, dI/dt=100A/s | - | 31 | - | nC |
Absolute Maximum Ratings (@Tj=25 unless otherwise specified)
| Symbol | Parameter | Value | Unit |
|---|---|---|---|
| VDS | Drain source voltage | 65 | V |
| VGS | Gate source voltage | 25 | V |
| ID | Continuous drain current | 125 | A |
| IDM | Pulsed drain current | 492 | A |
| IAS | Diode forward current | 55 | A |
| PD | Power dissipation | 172 | W |
| EAS | Single pulsed avalanche energy | 225 | mJ |
| Tstg, Tj | Operation and storage temperature | -55 to 150 | |
| RJC | Thermal resistance, junction-case | 1.4 | /W |
| RJA | Thermal resistance, junction-ambient | 62.5 | /W |
Applications
- Battery protection
- Load switch
- Uninterruptible power supply
- Other Switching applications
2410121435_A-Power-microelectronics-AP120N06P_C3011344.pdf
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