Battery protection MOSFET A Power microelectronics AP50N03DF 30V N Channel enhancement mode device
Key Attributes
Model Number:
AP50N03DF
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
50A
Operating Temperature -:
-55℃~+150℃
RDS(on):
12mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
87pF
Number:
1 N-channel
Output Capacitance(Coss):
135pF
Pd - Power Dissipation:
26W
Input Capacitance(Ciss):
870pF
Gate Charge(Qg):
4.2nC@4.5V
Mfr. Part #:
AP50N03DF
Package:
PDFN-8L(3x3)
Product Description
Product Overview
The AP50N03DF is a 30V N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as 4.5V. This device is suitable for battery protection and other switching applications, including lithium battery protection, wireless impact, and mobile phone fast charging.
Product Attributes
- Brand: APM Microelectronics ()
- Product ID: AP50N03DF
- Package Type: PDFN3*3-8L
- Mode: N-Channel Enhancement Mode
- Origin: China ()
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (TC=25 unless otherwise noted) | ||||||
| VDS | Drain-Source Voltage | 30 | V | |||
| VGS | Gate-Source Voltage | 20 | 20 | V | ||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V1 | 50 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ 10V1 | 23 | A | |||
| IDM | Pulsed Drain Current2 | 75 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 24.2 | mJ | |||
| IAS | Avalanche Current | 22 | A | |||
| PD@TC=25 | Total Power Dissipation4 | 26 | W | |||
| PD@TA=25 | Total Power Dissipation4 | 1.67 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| RJA | Thermal Resistance Junction-Ambient1 | 75 | /W | |||
| RJC | Thermal Resistance Junction-Case1 | 4.8 | /W | |||
| Electrical Characteristics (TC=25 unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 30 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=6A | 10.5 | 12 | m | |
| VGS=4.5V , ID=5A | 15.5 | 19 | m | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.2 | 1.6 | 2.5 | V |
| IDSS | Drain-Source Leakage Current | VDS=24V , VGS=0V , TJ=25 | --- | 1 | uA | |
| VDS=24V , VGS=0V , TJ=55 | --- | 5 | uA | |||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | 100 | nA | |
| gfs | Forward Transconductance | VDS=5V , ID=12A | 32 | --- | S | |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | 2.1 | --- | ||
| Qg | Total Gate Charge (4.5V) | VDS=15V , VGS=4.5V , ID=6A | 4.2 | --- | nC | |
| Qgs | Gate-Source Charge | 2.6 | --- | |||
| Qgd | Gate-Drain Charge | 1.4 | --- | |||
| Td(on) | Turn-On Delay Time | VDD=15V , VGS=10V , RG=1.5 ID=1A | 13.1 | --- | ns | |
| Tr | Rise Time | 6.3 | --- | |||
| Td(off) | Turn-Off Delay Time | 21 | --- | |||
| Tf | Fall Time | 7 | --- | |||
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | 870 | --- | pF | |
| Coss | Output Capacitance | 135 | --- | |||
| Crss | Reverse Transfer Capacitance | 87 | --- | |||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | 37 | A | |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25 | --- | 1 | V | |
| Package Mechanical Data-DFN3*3-8L-JQ | ||||||
| Symbol | mm | Nom | Min | Max | ||
| A | 0.75 | 0.70 | 0.85 | |||
| A1 | / | / | 0.05 | |||
| b | 0.30 | 0.20 | 0.40 | |||
| c | 0.152 | 0.10 | 0.25 | |||
| D | 3.30 | 3.15 | 3.45 | |||
| D1 | 3.15 | 3.00 | 3.25 | |||
| D2 | 2.45 | 2.29 | 2.65 | |||
| E | 3.30 | 3.15 | 3.45 | |||
| E1 | 3.05 | 2.90 | 3.20 | |||
| E2 | 1.74 | 1.54 | 1.94 | |||
| E3 | 0.48 | 0.28 | 0.65 | |||
| E4 | 0.57 | 0.37 | 0.77 | |||
| E5 | 0.20 | 0.10 | 0.30 | |||
| e | 0.65 | 0.60 | 0.70 | |||
| K | 0.69 | 0.59 | 0.89 | |||
| L | 0.40 | 0.30 | 0.50 | |||
| L1 | 0.125 | 0.06 | 0.20 | |||
| t | 0.075 | 0 | 0.13 | |||
| 12 | 10 | 14 | ||||
2410121532_A-Power-microelectronics-AP50N03DF_C3011272.pdf
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