P Channel MOSFET ALJ AO3415 Featuring Low RDS ON and Gate Voltage Operation at 1.8V for PWM Circuits
Key Attributes
Model Number:
AO3415
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4A
RDS(on):
41mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
900mV@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
115pF
Output Capacitance(Coss):
150pF
Input Capacitance(Ciss):
905pF
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
11nC@4.5V
Mfr. Part #:
AO3415
Package:
SOT-23
Product Description
Product Overview
The AO3415 is a P-Channel MOSFET from Shenzhen Long Jing Micro-Electronics Co., Ltd., designed with advanced trench technology. It offers excellent low on-resistance (RDS(ON)) and low gate charge, with operation possible at gate voltages as low as 1.8V. This device is ESD protected and suitable for applications such as load switches and PWM applications.
Product Attributes
- Brand: SHENZHEN LONG JING MICRO-ELECTRONICS CO., LTD.
- Product Type: P-Channel MOSFET
- Encapsulation: SOT-23 Plastic-Encapsulate
- Origin: China (implied by website domain and company name)
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Features | ||||||
| VDS | Drain-Source voltage | -20 | V | |||
| ID | Continuous Drain Current | VGS = -4V | 3 | A | ||
| RDS(ON) | Static Drain-Source On-Resistance | VGS = -4.5V | 34 | 41 | m | |
| RDS(ON) | Static Drain-Source On-Resistance | VGS = -2.5V | 42 | 53 | m | |
| RDS(ON) | Static Drain-Source On-Resistance | VGS = -1.8V | 52 | 65 | m | |
| Maximum Ratings | ||||||
| (Ta=25C unless otherwise specified) | ||||||
| VDS | Drain-Source voltage | -20 | V | |||
| VGS | Gate-Source voltage | 8 | V | |||
| ID | Continuous Drain Current | Ta=25C | -4 | A | ||
| ID | Continuous Drain Current | Ta=70C | -3.5 | A | ||
| IDM | Pulsed Drain Current | -30 | A | |||
| PD | Power Dissipation | Ta=25C | 1.5 | W | ||
| PD | Power Dissipation | Ta=70C | 1 | W | ||
| TJ, TSTG | Junction and Storage Temperature Range | -55 | +150 | C | ||
| Thermal Characteristics | ||||||
| RJA | Maximum Junction-to-Ambient | t 10s | 65 | 80 | C/W | |
| RJA | Maximum Junction-to-Ambient | Steady-State | 85 | 100 | C/W | |
| RJL | Maximum Junction-to-Lead | Steady-State | 43 | 52 | C/W | |
| Electrical Characteristics | ||||||
| (TJ=25C unless otherwise specified) | ||||||
| Static Parameters | ||||||
| V(BR)DSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = -250A | -20 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS = -20V, VGS = 0V | -1 | A | ||
| IDSS | Zero Gate Voltage Drain Current | TJ=55C | -5 | A | ||
| IGSS | Gate-body Leakage current | VDS = 0V, VGS = 8V | 10 | A | ||
| VGS(th) | Gate-Threshold Voltage | VDS = VGS, ID = -250A | -0.3 | -0.57 | -0.9 | V |
| ID(ON) | On-state Drain Current | VGS = -4.5V, VDS = -5V | -30 | A | ||
| RDS(on) | Static Drain-Source On-Resistance | VGS = -4.5V, ID = -4A | 34 | 41 | m | |
| RDS(on) | Static Drain-Source On-Resistance | TJ=125C | 49 | 59 | m | |
| RDS(on) | Static Drain-Source On-Resistance | VGS = -2.5V, ID = -4A | 42 | 53 | m | |
| RDS(on) | Static Drain-Source On-Resistance | VGS = -1.8V, ID = -2A | 52 | 65 | m | |
| RDS(on) | Static Drain-Source On-Resistance | VGS = -1.5V, ID = -1A | 61 | m | ||
| gfs | Forward Trans conductance | VDS = -5V, ID = -4A | 20 | S | ||
| VSD | Diode Forward Voltage | IS = -1A, VGS=0 V | -0.64 | -1 | V | |
| IS | Maximum Body-Diode Continuous Current | -2 | A | |||
| Dynamic Parameters | ||||||
| Ciss | Input Capacitance | VGS = 0V VDS = -10V f = 1.0MHz | 600 | 751 | pF | |
| Coss | Output Capacitance | 80 | 115 | pF | ||
| Crss | Reverse Transfer Capacitance | 48 | 80 | pF | ||
| Rg | Gate resistance | VGS=0V, VDS=0V, f=1MHz | 6 | 13 | ||
| Dynamic Parameters | ||||||
| Qg | Total Gate Charge | VGS = -4.5V VDS = -10V ID = -4A | 7.4 | 9.3 | nC | |
| Qgs | Gate Source Charge | 0.8 | 1 | nC | ||
| Qgd | Gate Drain Charge | 1.3 | 2.2 | nC | ||
| tD(on) | Turn-On Delay Time | VGS = -4.5V, VDS = -10V, RL = 2.5, RGEN = 3 | 13 | ns | ||
| tr | Turn-On Rise Time | 9 | ns | |||
| tD(off) | Turn-Off Delay Time | 19 | ns | |||
| tf | Turn-Off Fall Time | 29 | ns | |||
| trr | Body Diode Reverse Recovery Time | IF = -4A, dI/dt = 500A/s | 20 | 26 | ns | |
| Qrr | Body Diode Reverse Recovery Charge | IF = -4A, dI/dt = 500A/s | 40 | 51 | nC | |
2410121321_ALJ-AO3415_C22751457.pdf
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