Compact SOT 23 Package N Channel MOSFET ALJ BSS138 Designed for Solid State Relay and Display Control
Key Attributes
Model Number:
BSS138
Product Custom Attributes
Drain To Source Voltage:
50V
Current - Continuous Drain(Id):
220mA
Operating Temperature -:
-
RDS(on):
3.5Ω@10V
Gate Threshold Voltage (Vgs(th)):
1.5V@1mA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
6pF
Output Capacitance(Coss):
13pF
Input Capacitance(Ciss):
27pF
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
600pC
Mfr. Part #:
BSS138
Package:
SOT-23
Product Description
Product Overview
The SHENZHEN LONG JING MICRO-ELECTRONICS CO., LTD. BSS138 is an N-Channel MOSFET in a SOT-23 plastic-encapsulated package. It features a high-density cell design for extremely low RDS(on) and a rugged, reliable construction. This MOSFET is designed for direct logic-level interface with TTL/CMOS and is suitable for driving relays, solenoids, lamps, hammers, displays, memories, and transistors. It is also ideal for battery-operated systems and solid-state relays.
Product Attributes
- Brand: SHENZHEN LONG JING MICRO-ELECTRONICS CO., LTD.
- Product Type: N-Channel MOSFET
- Package Type: SOT-23 Plastic-Encapsulate
- Origin: Shenzhen
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Maximum Ratings (Ta=25C unless otherwise specified) | ||||||
| VDSS | Drain-Source voltage | 50 | V | |||
| VGSS | Gate-Source voltage | 20 | V | |||
| ID | Continuous Drain Current | 0.22 | A | |||
| IDM | Pulsed Drain Current (tp=10us) | 0.88 | A | |||
| PD | Power Dissipation | 0.35 | W | |||
| RJA | Thermal Resistance from Junction to Ambient | 357 | C/W | |||
| TJ | Operating Temperature | 150 | C | |||
| TSTG | Storage Temperature | -55 | +150 | C | ||
| Switching Characteristics (1,2) | ||||||
| td(on) | Turn-On Delay Time | VDD = 30V, VDS = 10V, ID =0.29A,RGEN = 6 | 5 | ns | ||
| tr | Rise Time | 18 | ns | |||
| td(off) | Turn-Off Delay Time | 36 | ns | |||
| tf | Fall Time | 14 | ns | |||
| Drain-source body diode characteristics (1) | ||||||
| VSD | Body diode forward voltage | IS = 0.44A, VGS = 0V | 1.4 | V | ||
| Electrical Characteristics (Ta=25C unless otherwise specified) | ||||||
| Off Characteristics | ||||||
| V(BR)DSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 50 | V | ||
| IGSS | Gate-body Leakage current | VDS = 0V, VGS = 20V | 100 | nA | ||
| IDSS | Zero Gate Voltage Drain Current | VDS = 50V, VGS = 0V | 0.5 | A | ||
| VDS = 30V, VGS = 0V | 100 | nA | ||||
| On Characteristics | ||||||
| VGS(th) | Gate-Threshold Voltage (1) | VDS = VGS, ID = 1mA | 0.8 | 1.5 | V | |
| RDS(on) | Static Drain-Source On-Resistance (1) | VGS = 10V, ID = 0.22A | 3.5 | |||
| VGS = 4.5V, ID = 0.22A | 6.0 | |||||
| gfs | Forward Trans conductance (1) | VDS = 10V, ID = 0.22A | 0.12 | S | ||
| Dynamic Characteristics (2) | ||||||
| Ciss | Input Capacitance | VGS = 0V VDS = 25V f = 1.0MHz | 27 | pF | ||
| Coss | Output Capacitance | 13 | pF | |||
| Crss | Reverse Transfer Capacitance | 6 | pF | |||
| Qg | Total Gate Charge | VDS=25V, ID=0.2A, VGS= 4.5V | 0.6 | nC | ||
| Qgs | Gate-Source Charge | 0.22 | nC | |||
| Qgd | Gate-Drain Charge | 0.2 | nC | |||
Package Information
Package: SOT-23
Soldering Parameters
Reflow Condition: Pb Free assembly
| Parameter | Min | Max | Unit |
|---|---|---|---|
| Pre Heat Temperature (Ts(min)) | 150 | C | |
| Temperature Max (Ts(max)) | 200 | C | |
| Time (min to max) (ts) | 60 | 190 | secs |
| Ramp-up Rate | 5 | C/second | |
| Reflow Temperature (TL) (Liquidus) | 217 | C | |
| Time (tL) | 60 | 150 | seconds |
| Temperature (tp) | 260+0/-5 | C | |
| Time within actual peak Temperature (tp) | 20 | 40 | seconds |
| Ramp-down Rate | 5 | C/second | |
| Time 25C to peak Temperature (TP) | 8 | minutes Max. | |
| Maximum Peak Temperature | 280 | C |
2410121910_ALJ-BSS138_C22458952.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion
Product OverviewThe YJG130G04CQ is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, a high-density cell design for low RDS(ON), and an excellent package for heat dissipation. This transistor ...
Integrated bias resistor digital transistor YANGJIE DTC143ECA suitable for surface mount and inverter circuit
Product OverviewThe DTC143ECA is a digital transistor with built-in resistors, designed for surface mount applications. Its integrated bias resistors simplify inverter circuit configuration by eliminating the need for external input resistors. This component is manufactured by Yangzhou Yangjie ...
Switching amplifier NPN transistor YONGYUTAI 2N3904 epitaxial planar type with 100 milliamps collector current rating
Product OverviewNPN silicon epitaxial planar transistor designed for switching and amplifier applications. It is recommended as a complementary type to the PNP transistor 2N3906. This transistor is also available in the SOT-23 case under the type designation MMBT3904.Product AttributesBrand: Not ...
Zener diode YANGJIE BZX584B15VQ with 15 volt Zener voltage and 2 percent tolerance in compact SOD523 package
Product OverviewThe BZX584B3V6Q thru BZX584B36VQ series are small signal Zener diodes designed for general regulation functions. They feature an epoxy case that meets UL-94 V-0 flammability rating and is halogen-free, with Moisture Sensitivity Level 1. These diodes offer Zener voltages ranging from ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
