RoHS compliant NPN transistor amsem MMBT4401 with 300mW power dissipation and SOT23 surface mount package
Key Attributes
Model Number:
MMBT4401
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
6V
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
250MHz
Type:
NPN
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
MMBT4401
Package:
SOT-23
Product Description
Product Overview
The MMBT4401 is an NPN general-purpose amplifier designed for surface mounting in a SOT-23 package. It offers a power dissipation capability of 300mW and operates within a junction temperature range of -55 to 150. This device is RoHS compliant and available as a Green EMC product.
Product Attributes
- Brand: Anhui Anmei Semiconductor Co.,Ltd.
- Package: SOT-23
- Certifications: RoHS compliant, Green EMC
Technical Specifications
| Parameter | Symbol | Conditions | Min | Max | Unit |
| Maximum Ratings | VCBO | Collector-Base Voltage | 60 | V | |
| VCEO | Collector-Emitter Voltage | 40 | V | ||
| VEBO | Emitter-Base Voltage | 6 | V | ||
| IC | Collector Current | 600 | mA | ||
| PC | Collector Power Dissipation | 300 | mW | ||
| Tj | Junction Temperature | 150 | |||
| Tstg | Storage Temperature | -55+150 | |||
| Electrical Characteristics | VCEO | Collector-Emitter Breakdown Voltage (IC=1.0mA, IB=0) | 40 | V | |
| VCBO | Collector-Base Breakdown Voltage (IC=100A, IE=0) | 60 | V | ||
| VEBO | Emitter-Base Breakdown Voltage (IE=100A, IC=0) | 6.0 | V | ||
| ICBO | Collector Cutoff Current (VCB=50V, IE=0) | 100 | nA | ||
| ICEX | Collector Cutoff Current (VCE=35V, VBE=0.4V) | 100 | nA | ||
| IEBO | Emitter cut-off current (VEB=5V,IC=0V) | 100 | nA | ||
| hFE | DC Current Gain (IC=1.0mA,VCE=1.0V) | 40 | |||
| VCE(sat) | Collector-Emitter Saturation Voltage (IC=150mA,IB=15mA) | 0.4 | V | ||
| VBE(sat) | Base-Emitter Saturation Voltage (IC=150mA,IB=15mA) | 0.75 | 1.2 | V | |
| fT | Current Gain-Bandwidth Product (IC=20mA, VCE=10V,f=100MHz) | 250 | MHz | ||
| Switching Characteristics | td | Delay Time (VCC=30V,VBE=0.2V IC=150mA,IB1=15mA) | 15 | ns | |
| ts | Storage Time (VCC=30V,IC=150mA IB1=IB2=15mA) | 225 | ns | ||
| tf | Fall Time | 30 | ns |
2410121532_amsem-MMBT4401_C7529046.pdf
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