RoHS compliant ultra fast recovery diode amsem MUR420S for high frequency rectification applications
Key Attributes
Model Number:
MUR420S
Product Custom Attributes
Reverse Leakage Current (Ir):
3uA
Non-Repetitive Peak Forward Surge Current:
120A
Reverse Recovery Time (trr):
25ns
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
200V
Voltage - Forward(Vf@If):
1.05V@4A
Current - Rectified:
4A
Mfr. Part #:
MUR420S
Package:
SMC
Product Description
Product Overview
The MUR420S is an ultra-fast recovery rectifier diode designed for high-frequency rectification and freewheeling applications in switching mode converters and inverters. It offers low power loss, ultra-fast recovery time for high efficiency, low leakage current, and high forward surge capability. This product is suitable for consumer, computer, and telecommunication applications.
Product Attributes
- Brand: An hui Anmei Semiconductor Co.,Ltd.
- Product Series: MUR420S
- Package: DO-214AB (SMC)
- Material: Glass passivated chip junction, Molding compound meets UL 94 V-0 flammability rating, Tin plated leads
- Certifications: Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C; AEC-Q101 qualified available
- RoHS-compliant: Yes
Technical Specifications
| Parameter | Symbol | Unit | Conditions | MUR420S |
| Repetitive Peak Reverse Voltage | VRRM | V | 200 | |
| Average Forward Current | I F(AV) | A | Ta=25 | 4.0 |
| Surge(Non-repetitive)Forward Current | IFSM | A | Ta=25, 60Hz Half-sine wave, 1 cycle | 60 |
| Storage Temperature | Tstg | -55 ~ +150 | ||
| Junction Temperature | Tj | -55 ~ +150 | ||
| Peak Forward Voltage | VFM | V | IF=4.0A | 1.05 |
| Peak Reverse Current | IRRM1 | A | VRM=VRRM, Ta=25 | 3.0 |
| Peak Reverse Current | IRRM2 | A | VRM=VRRM, Ta=125 | 100 |
| Reverse Recovery time | Trr | ns | IF =0.5A, I R =1A, RR =0.25A | 25 |
| Thermal Resistance | RJ-L | /W | Between junction and ambient | 20 |
| Typical junction capacitance | Cj | pF | Measured at 1MHZ and Applied Reverse Voltage of 4.0 V.D.C | 12 |
| Non repetitive reverse avalanche energy | ER | mJ | I(BR)R = 0.7 A, inductive load | 10 |
2410122015_amsem-MUR420S_C18336933.pdf
Related Products
High surge current fast recovery rectifier diode ZHIDE MURS220 with plastic molded epoxy UL 94V 0 flame retardant
Product OverviewThe MURS220-MURS2100 series are plastic encapsulated epitaxial fast recovery rectifier diodes designed for high-reliability applications. They feature low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering (260/10 seconds). The ...
General purpose Zener diode YANGJIE BZX584B4V3 with cathode polarity and RoHS compliant certification
Product OverviewThe BZX584B2V4 THRU BZX584B36V series are high-reliability Zener diodes featuring very sharp reverse characteristics and low reverse current levels. They are designed for general-purpose applications and are available with Zener voltages ranging from 2.4V to 36V.Product AttributesBra...
Robust industrial IGBT module YANGJIE MG50HF12TLC1 with low VCEsat and high short circuit capability
Product OverviewThe MG50HF12TLC1 S-M392 is a high-performance IGBT module designed for inverter applications, AC/DC servo drive amplifiers, UPS systems, and soft switching welding machines. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short ...
YANGJIE DTC144EUAQ NPN Digital Transistor with Built in Resistors Providing Performance in Compact Packages
Product OverviewThe DTC144EUAQ is an NPN Digital Transistor with built-in resistors, designed to simplify circuit design by eliminating the need for external input resistors. It is ideal for configuring inverter circuits and offers easy setup for on/off conditions, reducing component count and board ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
