Compact surface mount diode amsem BAV70 designed for fast switching and low leakage current general
Key Attributes
Model Number:
BAV70
Product Custom Attributes
Reverse Leakage Current (Ir):
2.5uA
Non-Repetitive Peak Forward Surge Current:
1A
Reverse Recovery Time (trr):
4ns
Diode Configuration:
1 Pair Common Cathode
Voltage - DC Reverse (Vr) (Max):
75V
Pd - Power Dissipation:
350mW
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
150mA
Mfr. Part #:
BAV70
Package:
SOT-23
Product Description
Product Overview
The BAV70 is a general-purpose switching diode designed for fast switching applications. It offers high conductance, low current leakage, and comes in a small outline surface mount package. This RoHS compliant and Green EMC device is suitable for various general-purpose switching needs.
Product Attributes
- Brand: Anhui Anmei Semiconductor Co.,Ltd.
- Origin: China
- Certifications: RoHS compliant / Green EMC
Technical Specifications
| Parameter | Conditions | Min | Max | Units |
| Reverse Voltage | 75 | V | ||
| Average Rectified Output Current | 150 | mA | ||
| Power Dissipation | 350 | mW | ||
| Peak Forward Surge Current @t=1.0S Non-Repetitive | 1.0 | A | ||
| Junction Temperature | 150 | |||
| Storage Temperature | -55 | 150 | ||
| Thermal Resistance | 357 | /W | ||
| Forward Voltage | IF=1mA | 0.715 | V | |
| Forward Voltage | IF=10mA | 0.855 | V | |
| Forward Voltage | IF=50mA | 1.00 | V | |
| Forward Voltage | IF=150mA | 1.25 | V | |
| Reverse breakdown voltage | IR=100uA | 75 | V | |
| Reverse voltage leakage current | VR=75V | 2.5 | uA | |
| Reverse voltage leakage current | VR=75V Ta=150 | 50 | uA | |
| Typical Junction Capacitance | VR=0V, f=1.0MHz | 2 | pF | |
| Reverse recovery time | IF=10mA,VR=0V, RL=100 | 4 | nS |
2410121242_amsem-BAV70_C7528919.pdf
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