Silicon N Channel MOSFET AUD034N04LA Designed for LCD PDP TVs PD Adaptors and LED Lighting Applications
Key Attributes
Model Number:
AUD034N04LA
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
125A
RDS(on):
2.9mΩ
Operating Temperature -:
-
Gate Threshold Voltage (Vgs(th)):
1.7V
Reverse Transfer Capacitance (Crss@Vds):
406pF@20V
Number:
1 N-channel
Input Capacitance(Ciss):
5.451nF@20V
Pd - Power Dissipation:
105W
Gate Charge(Qg):
156.7nC
Mfr. Part #:
AUD034N04LA
Package:
TO-252
Product Description
Product Overview
The AUD034N04LA is a Silicon N-Channel MOSFET designed for automotive applications. It is suitable for single-ended flyback or two-transistor forward topologies, commonly found in PC power supplies, PD adaptors, LCD & PDP TVs, and LED lighting. Key features include low drain-source on-resistance (RDS(ON) = 2.9m typ.), easy gate switching control, enhancement mode operation with a gate threshold voltage (Vth) of 1 to 2.3 V, and a high operating temperature of 175C. This MOSFET is AEC-Q101 qualified.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Silicon N-Channel MOS
- Color: Not specified
- Certifications: AEC-Q101 qualified
- Product Code: AUD034N04LA
- Technology: Enhancement mode
Technical Specifications
| Parameter | Symbol | Value | Unit | Note / Test Condition |
|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 40 | V | VGS=0V, ID=250uA |
| Gate threshold voltage | V(GS)th | 1 - 2.3 | V | VDS=VGS, ID=250uA |
| Zero gate voltage drain current | IDSS | - | 1 | uA VDS=40V, VGS=0V, Tj=25C |
| Gate-source leakage current | IGSS | - | 100 | nA VGS=20V, VDS=0V |
| Drain-source on-state resistance | RDS(on) | 2.9 - 3.4 | m | VGS=10V, ID=20A, Tj=25C |
| Gate resistance (Intrinsic) | RG | - | 1.1 | f=1MHz, open drain |
| Continuous drain current | ID | - 125 | A | TC=25C (Limited by Tj,max. Maximum Duty Cycle D = 0.50) |
| Continuous drain current | ID | - 88 | A | TC=100C |
| Pulsed drain current | ID,pulse | - 375 | A | TC=25C (Pulse width tp limited by Tj,max) |
| Avalanche energy, single pulse | EAS | - 272 | mJ | Tc=25,VDD=50V, I=33A, L=0.5mH, RG=25 |
| Avalanche current, single pulse | IAR | - 33 | A | Tc=25,VDD=50V,L=0.5mH, RG=25 |
| Gate source voltage (static) | VGS | -20 - 20 | V | static |
| Power dissipation | Ptot | - 105 | W | TC=25C |
| Storage temperature | Tstg | -55 - 175 | C | |
| Operating junction temperature | Tj | -55 - 175 | C | |
| Soldering Temperature | TL | - 260 | C | Distance of 1.6mm from case for 10s |
| Transconductance | GFS | - 46.5 | S | VDS=5V IDS=10A |
| Thermal resistance, junction - case | RthJC | - 1.44 | C/W | |
| Thermal resistance, junction - ambient | RthJA | - 62 | C/W | device on PCB, minimal footprint |
| Input capacitance | Ciss | - 5451 | pF | VGS=0V, VDS=20V, f=1MHz |
| Output capacitance | Coss | - 484 | pF | VGS=0V, VDS=20V, f=1MHz |
| Reverse transfer capacitance | Crss | - 406 | pF | VGS=0V, VDS=20V, f=1MHz |
| Turn-on delay time | td(on) | - 20.8 | ns | VDD=25V,VGS=10V,ID=1A, RG=6 |
| Rise time | tr | - 26.2 | ns | VDD=25V,VGS=10V,ID=1A, RG=6 |
| Turn-off delay time | td(off) | - 213.1 | ns | VDD=25V,VGS=10V,ID=1A, RG=6 |
| Fall time | tf | - 81.8 | ns | VDD=25V,VGS=10V,ID=1A, RG=6 |
| Gate to source charge | Qgs | - 29.4 | nC | VDD=20V, ID=20A, VGS=0 to 10V |
| Gate to drain charge | Qgd | - 26 | nC | VDD=20V, ID=20A, VGS=0 to 10V |
| Gate charge total | Qg | - 156.7 | nC | VDD=20V, ID=20A, VGS=0 to 10V |
| Diode forward voltage | VSD | - 0.7 - 1.1 | V | VGS=0V, IF=10A, Tj=25C |
| Reverse recovery time | trr | - 31.2 | ns | VR=20V, IF=10A, diF/dt=100A/s |
| Reverse recovery charge | Qrr | - 32.1 | nC | VR=20V, IF=10A, diF/dt=100A/s |
2409291603_ANHI-AUD034N04LA_C7494990.pdf
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