Power Switching Enhancement Mode MOSFET ASD70R600E N Channel with Low RDS on and Typical Gate Charge
Key Attributes
Model Number:
ASD70R600E
Product Custom Attributes
Drain To Source Voltage:
750V
Current - Continuous Drain(Id):
8A
RDS(on):
600mΩ
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.8V
Reverse Transfer Capacitance (Crss@Vds):
3.55pF@50V
Number:
1 N-channel
Input Capacitance(Ciss):
599pF@50V
Pd - Power Dissipation:
86W
Gate Charge(Qg):
8nC
Mfr. Part #:
ASD70R600E
Package:
TO-252
Product Description
Product Overview
The ASA70R600E, ASU70R600, and ASD70R600E are N-Channel Silicon MOSFETs designed for power switching applications. These enhancement-mode devices feature low drain-source on-resistance (RDS(on)) and easy gate control, making them suitable for single-ended flyback or two-transistor forward topologies. Key applications include PD adaptors, LCD & PDP TVs, and LED lighting.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Silicon
- Type: N-Channel MOS
- Mode: Enhancement mode
Technical Specifications
| Part Name | Package | VDS @ Tj,max (V) | RDS(on),max (m) | Qg,typ (nC) | ID,pulse (A) | Vth (V) |
|---|---|---|---|---|---|---|
| ASA70R600E | TO220F | 750 | 0.60 | 8.0 | 24 | 2.8 to 4.2 |
| ASU70R600E | TO251 | 750 | 0.60 | 8.0 | 24 | 2.8 to 4.2 |
| ASD70R600E | TO252 | 750 | 0.60 | 8.0 | 24 | 2.8 to 4.2 |
| Parameter | Symbol | Values (Min.) | Values (Typ.) | Values (Max.) | Unit | Note / Test Condition |
|---|---|---|---|---|---|---|
| Maximum Ratings | ||||||
| Continuous drain current | ID | - | - | 8 | A | TC=25C, Limited by Tj,max. Maximum Duty Cycle D = 0.50 |
| Pulsed drain current | ID,pulse | - | - | 24 | A | TC=25C, Pulse width tp limited by Tj,max |
| Avalanche energy, single pulse | EAS | - | - | 624 | mJ | Tc=25,VDD=50V,L = 49.9mH, RG=25 |
| Avalanche current, single pulse | IAS | - | - | 5 | A | Tc=25,VDD=50V,L = 49.9mH, RG=25 |
| MOSFET dv/dt ruggedness | dv/dt | - | - | 15 | V/ns | VDS=0...400V |
| Gate source voltage (static) | VGS | -20 | - | 20 | V | static |
| Gate source voltage (dynamic) | VGS | -30 | - | 30 | V | AC (f>1 Hz) |
| Power dissipation (TO220F) | Ptot | - | - | 28 | W | TC=25C |
| Power dissipation (TO252 & TO251) | Ptot | - | - | 86 | W | TC=25C |
| Storage temperature | Tstg | -55 | - | 150 | C | - |
| Operating junction temperature | Tj | -55 | - | 150 | C | - |
| Reverse diode dv/dt | dv/dt | - | - | 15 | V/ns | VDS=0...400V, ISD<=48A, Tj=25C |
| Thermal Characteristics (TO220F) | ||||||
| Thermal resistance, junction - case | RthJC | - | - | 4.5 | C/W | - |
| Thermal resistance, junction - ambient | RthJA | - | - | 80 | C/W | device on PCB, minimal footprint |
| Thermal Characteristics (TO251 and TO252) | ||||||
| Thermal resistance, junction - case | RthJC | - | - | 1.45 | C/W | - |
| Thermal resistance, junction - ambient | RthJA | - | - | 62 | C/W | device on PCB, minimal footprint |
| Electrical Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | 705 | - | - | V | VGS=0V, ID=10mA |
| Gate threshold voltage | V(GS)th | 2.8 | - | 4.2 | V | VDS=VGS, ID=250uA |
| Zero gate voltage drain current | IDSS | - | - | 100 | nA | VDS=700V, VGS=0V, Tj=25C |
| Gate-source leakage current | IGSS | - | - | 100 | nA | VGS=30V, VDS=0V |
| Drain-source on-state resistance | RDS(on) | - | 0.54 | 0.60 | VGS=10V, ID=3A, Tj=25C | |
| Gate resistance (Intrinsic) | RG | - | 24 | - | f=1MHz, open drain | |
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | - | 599 | - | pF | VGS=0V, VDS=50V, f=10kHz |
| Output capacitance | Coss | - | 76 | - | pF | VGS=0V, VDS=50V, f=10kHz |
| Reverse transfer capacitance | Crss | - | 3.55 | - | pF | VGS=0V, VDS=50V, f=10kHz |
| Turn-on delay time | td(on) | - | 26.8 | - | ns | VDD=400V,VGS=13V,ID=3A, RG=6.8 |
| Rise time | tr | - | 24.8 | - | ns | VDD=400V,VGS=13V,ID=3A, RG=6.8 |
| Turn-off delay time | td(off) | - | 127.6 | - | ns | VDD=400V,VGS=13V,ID=3A, RG=6.8 |
| Fall time | tf | - | 21.2 | - | ns | VDD=400V,VGS=13V,ID=3A, RG=6.8 |
| Gate Charge Characteristics | ||||||
| Gate to source charge | Qgs | - | 2.6 | - | nC | VDD=400V, ID=3A, VGS=0 to 10V |
| Gate to drain charge | Qgd | - | 1.7 | - | nC | VDD=400V, ID=3A, VGS=0 to 10V |
| Gate charge total | Qg | - | 8.0 | - | nC | VDD=400V, ID=3A, VGS=0 to 10V |
| Gate plateau voltage | Vplateau | - | 6.6 | - | V | VDD=400V, ID=3A, VGS=0 to 10V |
| Reverse Diode Characteristics | ||||||
| Diode forward voltage | VSD | - | 0.76 | - | V | VGS=0V, IF=1A, Tj=25C |
| Reverse recovery time | trr | - | 174 | - | ns | VR=400V, IF=3A, diF/dt=100A/s |
| Reverse recovery charge | Qrr | - | 1.2 | - | uC | VR=400V, IF=3A, diF/dt=100A/s |
| Peak reverse recovery current | Irrm | - | 13.5 | - | A | VR=400V, IF=3A, diF/dt=100A/s |
2410121620_ANHI-ASD70R600E_C5440014.pdf
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