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quality 1200V N Channel Silicon Carbide MOSFET ANHI ADW120N040BH for Power Conversion Applications factory
quality 1200V N Channel Silicon Carbide MOSFET ANHI ADW120N040BH for Power Conversion Applications factory

1200V N Channel Silicon Carbide MOSFET ANHI ADW120N040BH for Power Conversion Applications

Key Attributes
Model Number: ADW120N040BH
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
50.5A
Operating Temperature -:
-55℃~+175℃
RDS(on):
60mΩ
Gate Threshold Voltage (Vgs(th)):
4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
7.02pF
Input Capacitance(Ciss):
2.53nF
Output Capacitance(Coss):
110.7pF
Pd - Power Dissipation:
273W
Gate Charge(Qg):
105nC
Mfr. Part #:
ADW120N040BH
Package:
TO-247-3L
Product Description

Product Overview

The ADQ120N040BH and ADW120N040BH are 1200V N-Channel Silicon Carbide Power MOSFETs designed for high-efficiency power conversion applications. These devices offer a low drain-source on-resistance (RDS(ON) = 40m typ.) and are easy to control, featuring enhancement mode operation with a threshold voltage (Vth) of 2 to 4V. They are suitable for use in asymmetrical bridge converters, inverters, and single-switch forward and flyback topologies.

Product Attributes

  • Brand: Not specified
  • Origin: Not specified
  • Material: Silicon Carbide
  • Color: Not specified
  • Certifications: Not specified

Technical Specifications

Part Name Package Marking VDS @ Tj,max (V) RDS(on),max (m) Qg,typ (nC) ID,pulse (A)
ADQ120N040BH TO-247-4L ADQ120N040BH 1200 60 105 152
ADW120N040BH TO-247-3L ADW120N040BH 1200 60 105 152
Parameter Symbol Value Unit Note / Test Condition
Continuous drain current ID 50.5 A TC=25C, Limited by Tj,max
Continuous drain current ID 35 A TC=100C, Limited by Tj,max
Avalanche energy, single pulse EAS 990 mJ Tc=25,VDD=50V,L=10mH, RG=25
Gate source voltage (dynamic) VGS -10 to 22 V Absolute maximum values
Gate source voltage (static) VGS -5 to 20 V Absolute maximum values
Power dissipation Ptot 273 W TC=25C
Storage temperature Tstg -55 to 175 C
Operating junction temperature Tj -55 to 175 C
Soldering Temperature TL 260 C Distance of 1.6mm from case for 10s
Transconductance GFS 19.5 S VDS=20V, IDS=33.3A, Tj=25C
Transconductance GFS 29.6 S VDS=20V, IDS=33.3A, Tj=175C
Maximum Duty Cycle D 0.50 Pulse width tp limited by Tj,max
Thermal resistance, junction - case RthJC 0.55 to 0.7 C/W
Thermal resistance, junction - ambient RthJA 36 C/W device on PCB, minimal footprint
Drain-source breakdown voltage V(BR)DSS 1200 V VGS=0V, ID=100uA
Gate threshold voltage V(GS)th 2 to 4 V VDS=VGS, ID=5mA
Zero gate voltage drain current IDSS 50 uA VDS=1200V, VGS=0V
Gate-source leakage current IGSS+ 250 nA VGS=22V, VDS=0V
Gate-source leakage current IGSS- -100 nA VGS=-10V, VDS=0V
Drain-source on-state resistance RDS(on) 40 to 60 m VGS=20V, ID=20A, Tj=25C
Drain-source on-state resistance RDS(on) 66 m VGS=20V, ID=20A, Tj=150C
Gate resistance (Intrinsic) RG 5.2 f=1MHz, open drain
Input capacitance Ciss 2530 pF VGS=0V, VDS=1000V, f=1MHz
Output capacitance Coss 110.7 pF VGS=0V, VDS=1000V, f=1MHz
Reverse transfer capacitance Crss 7.02 pF VGS=0V, VDS=1000V, f=1MHz
Turn-on delay time td(on) 57.71 ns VDD=800V, ID=33.3A,RG=2.5; TJ =25, VGS=-4/18V, L=99uH
Rise time tr 15 ns VDD=800V, ID=33.3A,RG=2.5; TJ =25, VGS=-4/18V, L=99uH
Turn-off delay time td(off) 36.56 ns VDD=800V, ID=33.3A,RG=2.5; TJ =25, VGS=-4/18V, L=99uH
Fall time tf 9.924 ns VDD=800V, ID=33.3A,RG=2.5; TJ =25, VGS=-4/18V, L=99uH
Turn-on Switching Energy Eon 1079 uJ VDD=800V, ID=33.3A,RG=2.5; TJ =25, VGS=-4/18V, L=99uH
Turn-off Switching Energy Eoff 97.71 uJ VDD=800V, ID=33.3A,RG=2.5; TJ =25, VGS=-4/18V, L=99uH
Gate to source charge Qgs 33.8 nC VDD=800V, ID=30A, VGS=-4/18V
Gate to drain charge Qgd 34.1 nC VDD=800V, ID=30A, VGS=-4/18V
Gate charge total Qg 105 nC VDD=800V, ID=30A, VGS=-4/18V
Continuous Source Current ISD 50.5 A Limited by Tj,max
Diode forward voltage VSD 3.6 V IS = 20A, VGS = 0V, Tj=25C
Reverse recovery time trr 37.23 ns VGS = -4 V, ISD = 33.3 A, VR = 800 V, di/dt = 1150 A/s, Tj = 175 C
Reverse recovery charge Qrr 707.6 nC VGS = -4 V, ISD = 33.3 A, VR = 800 V, di/dt = 1150 A/s, Tj = 175 C
Peak reverse recovery current Irrm 30.55 A VGS = -4 V, ISD = 33.3 A, VR = 800 V, di/dt = 1150 A/s, Tj = 175 C

2410121513_ANHI-ADW120N040BH_C22470095.pdf

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