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quality Low Resistance Silicon N Channel MOSFET ANHI ASA80R900E for in Flyback and Forward Topology Designs factory
quality Low Resistance Silicon N Channel MOSFET ANHI ASA80R900E for in Flyback and Forward Topology Designs factory

Low Resistance Silicon N Channel MOSFET ANHI ASA80R900E for in Flyback and Forward Topology Designs

Key Attributes
Model Number: ASA80R900E
Product Custom Attributes
Drain To Source Voltage:
850V
Current - Continuous Drain(Id):
8.5A
RDS(on):
710mΩ
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3.5V
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-channel
Input Capacitance(Ciss):
850.8pF@100V
Pd - Power Dissipation:
43W
Gate Charge(Qg):
18.5nC
Mfr. Part #:
ASA80R900E
Package:
TO-220F
Product Description

Product Overview

The ASA80R900E is a Silicon N-Channel MOS Field-Effect Transistor (MOSFET) designed for high-efficiency power conversion applications. It features a low drain-source on-resistance (RDS(ON) = 620m typ.) and is easy to control with a gate switching enhancement mode. Ideal for single-ended flyback or two-transistor forward topologies, this MOSFET is suitable for use in PC power supplies, PD Adapters, LCD & PDP TVs, and LED lighting applications.

Product Attributes

  • Brand: ASA
  • Product Type: Silicon N-Channel MOS Field-Effect Transistor
  • Package Type: TO220F

Technical Specifications

Parameter Symbol Value Unit Note / Test Condition
Drain-source breakdown voltage V(BR)DSS 800 V VGS=0V, ID=250uA
Gate threshold voltage V(GS)th 2.8 - 4.2 V VDS=VGS, ID=250uA
Zero gate voltage drain current IDSS - 1 uA VDS=800V, VGS=0V, Tj=25C
Gate-source leakage current IGSS - 100 nA VGS=30V, VDS=0V
Drain-source on-state resistance RDS(on) 620 - 710 m VGS=10V, ID=6A, Tj=25C
Gate resistance (Intrinsic) RG 25 f=1MHz, open drain
Input capacitance Ciss 850.8 pF VGS=0V, VDS=100V, f=1MHz
Output capacitance Coss 34.4 pF VGS=0V, VDS=100V, f=1MHz
Reverse transfer capacitance Crss 0.92 pF VGS=0V, VDS=100V, f=1MHz
Turn-on delay time td(on) 40.6 ns VDD=400V,VGS=10V,ID=4.1A, RG=50
Rise time tr 34.8 ns VDD=400V,VGS=10V,ID=4.1A, RG=50
Turn-off delay time td(off) 128 ns VDD=400V,VGS=10V,ID=4.1A, RG=50
Fall time tf 31 ns VDD=400V,VGS=10V,ID=4.1A, RG=50
Gate to source charge Qgs 5.0 nC VDD=400V, ID=4.1A, VGS=0 to 10V
Gate to drain charge Qgd 6.6 nC VDD=400V, ID=4.1A, VGS=0 to 10V
Gate charge total Qg 18.5 nC VDD=400V, ID=4.1A, VGS=0 to 10V
Diode forward voltage VSD 0.75 V VGS=0V, IF=1A, Tj=25C
Reverse recovery time trr 266.5 ns VR=400V, IF=4.1A, diF/dt=100A/s
Reverse recovery charge Qrr 2.2 uC VR=400V, IF=4.1A, diF/dt=100A/s
Peak reverse recovery current Irrm 14 A VR=400V, IF=4.1A, diF/dt=100A/s
Continuous drain current ID 8.5 A TC=25C, Limited by Tj,max. Maximum Duty Cycle D = 0.50
Pulsed drain current ID,pulse 35 A TC=25C, Pulse width tp limited by Tj,max
Avalanche energy, single pulse EAS 88 mJ Tc=25,VDD=50V, Iav=4.2A, L=10mH, RG=25
Avalanche current, single pulse IAR 4.2 A Tc=25,VDD=50V, L=10mH, RG=25
Gate source voltage (static) VGS -30 - 30 V static
Power dissipation Ptot 43 W TC=25C
Storage temperature Tstg -55 - 150 C
Operating junction temperature Tj -55 - 150 C
Thermal resistance, junction - case RthJC 3.26 C/W
Thermal resistance, junction - ambient RthJA 76 C/W device on PCB, minimal footprint

2410121538_ANHI-ASA80R900E_C5440032.pdf

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