Silicon N Channel MOSFET ANHI ASA70R600E optimized for in LCD PDP TVs and power adaptor applications
Key Attributes
Model Number:
ASA70R600E
Product Custom Attributes
Drain To Source Voltage:
750V
Current - Continuous Drain(Id):
8A
RDS(on):
600mΩ
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.8V
Reverse Transfer Capacitance (Crss@Vds):
3.55pF@50V
Number:
1 N-channel
Pd - Power Dissipation:
28W
Input Capacitance(Ciss):
599pF@50V
Gate Charge(Qg):
8nC
Mfr. Part #:
ASA70R600E
Package:
TO-220F
Product Description
Product Overview
The ASA70R600E is a Silicon N-Channel MOS Field-Effect Transistor designed for applications in single-ended flyback or two-transistor forward topologies. It is suitable for use in PD adaptors, LCD & PDP TVs, and LED lighting. Key features include a low drain-source on-resistance of 0.540 (typ.) and easy gate switching control due to its enhancement mode operation with a threshold voltage (Vth) ranging from 2.8 to 4.2 V.
Product Attributes
- Brand: ASA
- Type: Silicon N-Channel MOS
- Mode: Enhancement mode
Technical Specifications
| Parameter | Symbol | Value | Unit | Note / Test Condition |
|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 705 | V | VGS=0V, ID=10mA |
| Gate threshold voltage | V(GS)th | 2.8 - 4.2 | V | VDS=VGS, ID=250uA |
| Zero gate voltage drain current | IDSS | - 100 | nA | VDS=700V, VGS=0V, Tj=25C |
| Gate-source leakage current | IGSS | - 100 | nA | VGS=30V, VDS=0V |
| Drain-source on-state resistance | RDS(on) | 0.54 - 0.60 | VGS=10V, ID=3A, Tj=25C | |
| Gate resistance (Intrinsic) | RG | 86 | f=1MHz, open drain | |
| Input capacitance | Ciss | 599 | pF | VGS=0V, VDS=50V, f=10kHz |
| Output capacitance | Coss | 76 | pF | VGS=0V, VDS=50V, f=10kHz |
| Reverse transfer capacitance | Crss | 3.55 | pF | VGS=0V, VDS=50V, f=10kHz |
| Turn-on delay time | td(on) | 26.8 | ns | VDD=400V,VGS=13V,ID=3A, RG=6.8 |
| Rise time | tr | 24.8 | ns | VDD=400V,VGS=13V,ID=3A, RG=6.8 |
| Turn-off delay time | td(off) | 127.6 | ns | VDD=400V,VGS=13V,ID=3A, RG=6.8 |
| Fall time | tf | 21.2 | ns | VDD=400V,VGS=13V,ID=3A, RG=6.8 |
| Gate to source charge | Qgs | 2.6 | nC | VDD=400V, ID=3A, VGS=0 to 10V |
| Gate to drain charge | Qgd | 1.7 | nC | VDD=400V, ID=3A, VGS=0 to 10V |
| Gate charge total | Qg | 8.0 | nC | VDD=400V, ID=3A, VGS=0 to 10V |
| Gate plateau voltage | Vplateau | 6.6 | V | VDD=400V, ID=3A, VGS=0 to 10V |
| Diode forward voltage | VSD | 0.76 | V | VGS=0V, IF=1A, Tj=25C |
| Reverse recovery time | trr | 174 | ns | VR=400V, IF=3A, diF/dt=100A/s |
| Reverse recovery charge | Qrr | 1.2 | uC | VR=400V, IF=3A, diF/dt=100A/s |
| Peak reverse recovery current | Irrm | 13.5 | A | VR=400V, IF=3A, diF/dt=100A/s |
| Continuous drain current | ID | 8 | A | TC=25C, Limited by Tj,max. Maximum Duty Cycle D = 0.50 |
| Pulsed drain current | ID,pulse | 24 | A | TC=25C, Pulse width tp limited by Tj,max |
| Avalanche energy, single pulse | EAS | 624 | mJ | - |
| MOSFET dv/dt ruggedness | dv/dt | 45 | V/ns | VDS=0...400V |
| Gate source voltage (static) | VGS | -20 | V | static |
| Gate source voltage (dynamic) | VGS | -30 | V | AC (f>1 Hz) |
| Power dissipation | Ptot | 28 | W | TC=25C |
| Storage temperature | Tstg | -55 - 150 | C | - |
| Operating junction temperature | Tj | -55 - 150 | C | - |
| Reverse diode dv/dt | dv/dt | 15 | V/ns | VDS=0...400V, ISD<=48A, Tj=25C |
| Thermal resistance, junction - case | RthJC | 4.5 | C/W | - |
| Thermal resistance, junction - ambient | RthJA | 80 | C/W | device on PCB, minimal footprint |
2410121550_ANHI-ASA70R600E_C5440006.pdf
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