Power Switching Silicon N Channel MOSFET ASU65R550E Suitable for LCD and PDP Television Circuits
Key Attributes
Model Number:
ASU65R550E
Product Custom Attributes
Drain To Source Voltage:
655V
Current - Continuous Drain(Id):
8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
550mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
3.55pF
Number:
1 N-channel
Output Capacitance(Coss):
76pF
Input Capacitance(Ciss):
599pF
Pd - Power Dissipation:
63W
Gate Charge(Qg):
8nC
Mfr. Part #:
ASU65R550E
Package:
TO-251
Product Description
Product Overview
The ASA65R550E, ASU65R550E, ASD65R550E, and ASE65R550E are N-Channel Silicon MOSFETs designed for efficient power switching applications. These enhancement-mode devices feature low drain-source on-resistance (RDS(on) = 0.50 typ.) and easy gate control for switching. They are ideal for use as boost PFC switches and in single-ended flyback or two-transistor forward topologies. Common applications include PD adaptors, LCD & PDP TVs, and LED lighting.
Product Attributes
- Type: Silicon N-Channel MOS
- Mode: Enhancement mode
- Brand: Not specified in the provided text
- Origin: Not specified in the provided text
Technical Specifications
| Part Name | Package | VDS @Tj,max (V) | RDS(on),max (m) | Qg,typ (nC) | ID,pulse (A) | Marking |
|---|---|---|---|---|---|---|
| ASA65R550E | TO220F | 700 | 0.55 | 8.0 | 24 | ASA65R550E |
| ASU65R550E | TO251 | 700 | 0.55 | 8.0 | 24 | ASU65R550E |
| ASD65R550E | TO252 | 700 | 0.55 | 8.0 | 24 | ASD65R550E |
| ASE65R550E | SOT223 | 700 | 0.55 | 8.0 | 24 | ASE65R550E |
| Parameter | Symbol | Value | Unit | Note / Test Condition |
|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 655 | V | VGS=0V,ID=10mA |
| Gate threshold voltage | V(GS)th | 2.8 - 4.2 | V | VDS=VGS,ID=250uA |
| Drain-source on-state resistance | RDS(on) | 0.50 - 0.55 | VGS=10V,ID=4A,Tj=25C | |
| Continuous drain current | ID | - 8 | A | TC=25C, Limited by Tj,max. Maximum Duty Cycle D=0.50 |
| Pulsed drain current | ID,pulse | - 24 | A | TC=25C, Pulse width tp limited by Tj,max |
| Avalanche energy, single pulse | EAS | - 624 | mJ | Tc=25,VDD=50V,L = 10mH, RG=25 |
| Avalanche current, single pulse | IAR | - 7 | A | Tc=25,VDD=50V,L = 10mH, RG=25 |
| Power dissipation (TO220F) | Ptot | - 28 | W | TC=25C |
| Power dissipation (TO252 & TO251) | Ptot | - 63 | W | TC=25C |
| Power dissipation (SOT223) | Ptot | - 7 | W | TC=25C |
| Storage temperature | Tstg | -55 - 150 | C | |
| Operating junction temperature | Tj | -55 - 150 | C | |
| Input capacitance | Ciss | - 599 | pF | VGS=0V,VDS=50V,f=10kHz |
| Output capacitance | Coss | - 76 | pF | VGS=0V,VDS=50V,f=10kHz |
| Reverse transfer capacitance | Crss | - 3.55 | pF | VGS=0V, VDS=50V, f=10kHz |
| Gate to source charge | Qgs | - 2.6 | nC | VDD=400V, ID=3A, VGS=0 to 10V |
| Gate to drain charge | Qgd | - 1.7 | nC | VDD=400V, ID=3A, VGS=0 to 10V |
| Gate charge total | Qg | - 8.0 | nC | VDD=400V, ID=3A, VGS=0 to 10V |
| Diode forward voltage | VSD | - 0.76 | V | VGS=0V,IF=1A,Tj=25C |
| Reverse recovery time | trr | - 174 | ns | VR=400V, IF=3 A, diF/dt=100A/s |
| Reverse recovery charge | Qrr | - 1.2 | uC | VR=400V, IF=3 A, diF/dt=100A/s |
| Peak reverse recovery current | Irrm | - 13.5 | A | VR=400V, IF=3 A, diF/dt=100A/s |
2410121552_ANHI-ASU65R550E_C19192891.pdf
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