Power Conversion Silicon N Channel MOSFET ANHI ASA60R180EFD with Gate Threshold Voltage 3 to 5 Volts
Key Attributes
Model Number:
ASA60R180EFD
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
28A
RDS(on):
140mΩ
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
5.07pF@50V
Number:
1 N-channel
Pd - Power Dissipation:
34W
Input Capacitance(Ciss):
2.389nF@50V
Gate Charge(Qg):
47.59nC
Mfr. Part #:
ASA60R180EFD
Package:
TO-220F
Product Description
Product Overview
The ASA60R180EFD is a Silicon N-Channel MOS MOSFET designed for high-efficiency power conversion applications. It features a low drain-source on-resistance (RDS(ON) = 0.140 typ.) and is easy to control, operating in enhancement mode. This MOSFET is ideal for use in half bridge, asymmetric half bridge, and series resonance half bridge topologies, commonly found in server power supplies, telecom power systems, and EV charging equipment.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Silicon N-Channel MOS
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Value | Unit | Note / Test Condition |
|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 605 | V | VGS=0V, ID=10mA |
| Gate threshold voltage | V(GS)th | 3 - 5 | V | VDS=VGS, ID=250uA |
| Zero gate voltage drain current | IDSS | - 5 | uA | VDS=600V, VGS=0V, Tj=25C |
| Gate-source leakage current | IGSS | - 100 | nA | VGS=30V, VDS=0V |
| Drain-source on-state resistance | RDS(on) | 0.14 - 0.18 | VGS=10V, ID=10A, Tj=25C | |
| Gate resistance (Intrinsic) | RG | - 5.8 | f=1MHz, open drain | |
| Input capacitance | Ciss | - 2389 | pF | VGS=0V, VDS=50V, f=10kHz |
| Output capacitance | Coss | - 218 | pF | VGS=0V, VDS=50V, f=10kHz |
| Reverse transfer capacitance | Crss | - 5.07 | pF | VGS=0V, VDS=50V, f=10kHz |
| Turn-on delay time | td(on) | - 12.4 | ns | VDD=400V,VGS=13V,ID=11.3A, RG=1.7 |
| Rise time | tr | - 21.6 | ns | VDD=400V,VGS=13V,ID=11.3A, RG=1.7 |
| Turn-off delay time | td(off) | - 50 | ns | VDD=400V,VGS=13V,ID=11.3A, RG=1.7 |
| Fall time | tf | - 18.4 | ns | VDD=400V,VGS=13V,ID=11.3A, RG=1.7 |
| Gate to source charge | Qgs | - 8.522 | nC | VDD=400V, ID=11.3A, VGS=0 to 10V |
| Gate to drain charge | Qgd | - 8.297 | nC | VDD=400V, ID=11.3A, VGS=0 to 10V |
| Gate charge total | Qg | - 47.59 | nC | VDD=400V, ID=11.3A, VGS=0 to 10V |
| Gate plateau voltage | Vplateau | - 5.4 | V | VDD=400V, ID=11.3A, VGS=0 to 10V |
| Diode forward voltage | VSD | - 0.69 | V | VGS=0V, IF=1A, Tj=25C |
| Reverse recovery time | trr | - 115 | ns | Vr=400v,IF=7A,di/dt=100A/us |
| Reverse recovery charge | Qrr | - 0.623 | uC | Vr=400v,IF=7A,di/dt=100A/us |
| Peak reverse recovery current | Irrm | - 10.3 | A | Vr=400v,IF=7A,di/dt=100A/us |
| Continuous drain current | ID | - 28 | A | TC=25C, Limited by Tj,max. Maximum Duty Cycle D = 0.50 |
| Pulsed drain current | ID,pulse | - 84 | A | TC=25C, Pulse width tp limited by Tj,max |
| Avalanche energy, single pulse | EAS | - 898 | mJ | |
| MOSFET dv/dt ruggedness | dv/dt | - 130 | V/ns | VDS=0...400V |
| Gate source voltage (static) | VGS | -20 - 20 | V | static |
| Gate source voltage (dynamic) | VGS | -30 - 30 | V | AC (f>1 Hz) |
| Power dissipation | Ptot | - 34 | W | TC=25C |
| Storage temperature | Tstg | -55 - 150 | C | |
| Operating junction temperature | Tj | -55 - 150 | C | |
| Reverse diode dv/dt | dv/dt | - 50 | V/ns | VDS=0...400V, ISD<=48A, Tj=25C |
| Thermal resistance, junction - case | RthJC | - 3.7 | C/W | |
| Thermal resistance, junction - ambient | RthJA | - 80 | C/W | device on PCB, minimal footprint |
2410121609_ANHI-ASA60R180EFD_C5439998.pdf
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