Durable P Channel Enhancement Mode MOSFET ANPEC APM3095PUC TRL for Desktop Computer Power Management

Name: Durable P Channel Enhancement Mode MOSFET ANPEC APM3095PUC TRL for Desktop Computer Power Management
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: APM3095PUC-TRL
Availability: InStock

Key Attributes

Model Number: APM3095PUC-TRL

Product Custom Attributes

Drain To Source Voltage:

30V

Current - Continuous Drain(Id):

Operating Temperature -:

-55℃~+150℃

RDS(on):

160mΩ@4.5V

Gate Threshold Voltage (Vgs(th)):

2V@250uA

Type:

P-Channel

Reverse Transfer Capacitance (Crss@Vds):

75pF@25V

Number:

1 P-Channel

Input Capacitance(Ciss):

550pF

Pd - Power Dissipation:

50W

Gate Charge(Qg):

13nC@10V

Mfr. Part #:

APM3095PUC-TRL

Package:

TO-252-2

Product Description

Product Overview

The APM3095PU is a P-Channel Enhancement Mode MOSFET designed for power management applications. It features a super high-density cell design, offering reliable and rugged performance. Key specifications include -30V drain-source voltage and -8A continuous drain current. This lead-free device is compliant with RoHS standards and is suitable for power management in desktop computers and DC/DC converters.

Product Attributes

Brand: ANPEC
Product Type: P-Channel Enhancement Mode MOSFET
Certifications: Lead Free Available (RoHS Compliant)
Origin: Taiwan (implied by copyright and website)

Technical Specifications

Model	Package	Handling Code	Lead Free Code	Features	Applications
APM3095PU	TO-252	TU (Tube) / TR (Tape & Reel)	L (Lead Free) / Blank (Original)	-30V/-8A, RDS(ON)=95m (typ.) @ VGS=-10V, RDS(ON)=140m (typ.) @ VGS=-4.5V, Super High Dense Cell Design, Reliable and Rugged, Lead Free Available (RoHS Compliant)	Power Management in Desktop Computer or DC/DC Converters

Symbol	Parameter	Test Condition	Min.	Typ.	Max.	Unit
Absolute Maximum Ratings
V_DSS	Drain-Source Voltage				-30	V
V_GSS	Gate-Source Voltage				25	V
T_J	Maximum Junction Temperature				150	C
T_STG	Storage Temperature Range		-55		150	C
I_S	Diode Continuous Forward Current	Mounted on Large Heat Sink			-2.5	A
I_DP	300s Pulse Drain Current	TC=25C			-30	A
I_DP	300s Pulse Drain Current	TC=100C			-10	A
I_D	Continuous Drain Current	TC=25C			-8	A
I_D	Continuous Drain Current	TC=100C			-4	A
P_D	Maximum Power Dissipation	TC=25C			50	W
P_D	Maximum Power Dissipation	TC=100C			20	W
R_JC	Thermal Resistance-Junction to Case			2.5	C/W
I_DP	300s Pulse Drain Current	Mounted on PCB of 1in Pad Area, TA=25C			-20	A
I_DP	300s Pulse Drain Current	Mounted on PCB of 1in Pad Area, TA=100C			-10	A
I_D	Continuous Drain Current	Mounted on PCB of 1in Pad Area, TA=25C			-4	A
I_D	Continuous Drain Current	Mounted on PCB of 1in Pad Area, TA=100C			-2	A
P_D	Maximum Power Dissipation	Mounted on PCB of 1in Pad Area, TA=25C			2.5	W
P_D	Maximum Power Dissipation	Mounted on PCB of 1in Pad Area, TA=100C			1	W
R_JA	Thermal Resistance-Junction to Ambient	Mounted on PCB of 1in Pad Area		50	C/W
I_DP	300s Pulse Drain Current	Mounted on PCB of Minimum Footprint, TA=25C			-20	A
I_DP	300s Pulse Drain Current	Mounted on PCB of Minimum Footprint, TA=100C			-10	A
I_D	Continuous Drain Current	Mounted on PCB of Minimum Footprint, TA=25C			-3	A
I_D	Continuous Drain Current	Mounted on PCB of Minimum Footprint, TA=100C			-2	A
P_D	Maximum Power Dissipation	Mounted on PCB of Minimum Footprint, TA=25C			1.6	W
P_D	Maximum Power Dissipation	Mounted on PCB of Minimum Footprint, TA=100C			0.6	W
R_JA	Thermal Resistance-Junction to Ambient	Mounted on PCB of Minimum Footprint		75	C/W
Electrical Characteristics (TA = 25C unless otherwise noted)
B_VDSS	Drain-Source Breakdown Voltage	V_GS=0V, I_DS=-250A	-30			V
I_DSS	Zero Gate Voltage Drain Current	V_DS=-24V, V_GS=0V			-1	A
		T_J=85C			-30	A
V_GS(th)	Gate Threshold Voltage	V_DS=V_GS, I_DS=-250A	-1	-1.5	-2	V
I_GSS	Gate Leakage Current	V_GS=25V, V_DS=0V			100	nA
R_DS(ON)^a	Drain-Source On-state Resistance	V_GS=-10V, I_DS=-6A		95	110	m
R_DS(ON)^a	Drain-Source On-state Resistance	V_GS=-4.5V, I_DS=-3A		140	160	m
Diode Characteristics
V_SD^a	Diode Forward Voltage	I_SD=-2.5A, V_GS=0V		-0.7	-1.3	V
Dynamic Characteristics^b
R_G	Gate Resistance	V_GS=0V,V_DS=0V,F=1MHz		13
C_iss	Input Capacitance			550		pF
C_oss	Output Capacitance			120		pF
C_rss	Reverse Transfer Capacitance	V_GS=0V, V_DS=-25V, Frequency=1.0MHz		75		pF
t_d(ON)	Turn-on Delay Time			10	20	ns
t_r	Turn-on Rise Time			8	20	ns
t_d(OFF)	Turn-off Delay Time			25	50	ns
t_f	Turn-off Fall Time	V_DD=-15V, R_L=15, I_DS=-1A, V_GEN=-10V, R_G=6		5	15	ns
Gate Charge Characteristics^b
Q_g	Total Gate Charge	V_DS=-15V, V_GS=-10V, I_DS=-6A		10	13	nC
Q_gs	Gate-Source Charge				2	nC
Q_gd	Gate-Drain Charge			1.2		nC

Package	Dimension	Millimeters	Inches
TO-252	A	2.18 - 2.39	0.086 - 0.094
	A1	0.89 - 1.27	0.035 - 0.050
	b	0.508 - 0.89	0.020 - 0.035
	b2	5.207 - 5.461	0.205 - 0.215
	C	0.46 - 0.58	0.018 - 0.023
	C1	0.46 - 0.58	0.018 - 0.023
	D	5.334 - 6.22	0.210 - 0.245
	D1	5.2 REF	0.205 REF
	E	6.35 - 6.73	0.250 - 0.265
	E1	5.3 REF	0.209 REF
	e1	3.96 - 5.18	0.156 - 0.204
	H	9.398 - 10.41	0.370 - 0.410
	L	0.51	0.020
	L1	0.64 - 1.02	0.025 - 0.040
	L2	0.89 - 2.032	0.035 - 0.080

Reflow Condition	Profile Feature	Sn-Pb Eutectic Assembly	Pb-Free Assembly
Reflow Profiles	Average ramp-up rate (T_L to T_P)	3C/second max.	3C/second max.
	Preheat - Temperature Min (T_smin)	100C	150C
	Preheat - Temperature Max (T_smax)	150C	200C
	Preheat - Time (min to max) (t_s)	60-120 seconds	60-180 seconds
	Time maintained above: - Temperature (T_L)	183C	217C
	Time maintained above: - Time (t_L)	60-150 seconds	60-150 seconds
	Peak/Classification Temperature (T_p)	See table 1	See table 2
	Time within 5C of actual Peak Temperature (t_p)	10-30 seconds	20-40 seconds
	Ramp-down Rate	6C/second max.	6C/second max.
	Time 25C to Peak Temperature	6 minutes max.	8 minutes max.

Classification Reflow Profiles (Cont.)	Table 1. SnPb Eutectic Process Package Peak Reflow Temperatures	Volume mm <2.5 mm	Volume mm 2.5 mm
Package Thickness	Volume mm <350	240 +0/-5C	225 +0/-5C
	Volume mm 350	225 +0/-5C	225 +0/-5C

Classification Reflow Profiles (Cont.)	Table 2. Pb-free Process Package Classification Reflow Temperatures	Volume mm <350	Volume mm 350-2000	Volume mm >2000
Package Thickness	<1.6 mm	260 +0C*	260 +0C*	260 +0C*
	1.6 mm 2.5 mm	260 +0C*	250 +0C*	245 +0C*
	2.5 mm	250 +0C*	245 +0C*	245 +0C*

Carrier Tape & Reel Dimensions (Cont.)	Dimension	Value (mm)
TO-252	A	330 3
	B	100 2
	C	13 0.5
	D	2 0.5
	D1	7.5 0.1
	E	1.5 +0.1
	F	1.5 0.25
	J	16.4 + 0.3 - 0.2
	P	2.5 0.5
	P1	16 + 0.3 - 0.1
t	8 0.1
W	1.75 0.1
Cover Tape Width	13.3
Devices Per Reel	2500

2411220243_ANPEC-APM3095PUC-TRL_C368551.pdf

Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.