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quality Pb Free P Channel MOSFET ALJ AO3401 with Low Gate Charge and Enhanced Performance in SOT 23 Package factory
quality Pb Free P Channel MOSFET ALJ AO3401 with Low Gate Charge and Enhanced Performance in SOT 23 Package factory

Pb Free P Channel MOSFET ALJ AO3401 with Low Gate Charge and Enhanced Performance in SOT 23 Package

Key Attributes
Model Number: AO3401
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
120mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1.3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
77pF
Input Capacitance(Ciss):
945pF
Pd - Power Dissipation:
1.4W
Output Capacitance(Coss):
115pF
Gate Charge(Qg):
9.4nC@4.5V
Mfr. Part #:
AO3401
Package:
SOT-23
Product Description

Product Overview

The AO3401 is a P-Channel Enhancement Mode Field Effect Transistor designed with advanced trench technology. It offers excellent RDS(ON), low gate charge, and the capability to operate with gate voltages as low as 2.5V. This makes it suitable for applications such as load switches or Pulse Width Modulation (PWM). The standard AO3401 is Pb-free, meeting ROHS & Sony 259 specifications. The AO3401L is a Green Product ordering option, and both AO3401 and AO3401L are electrically identical.

Product Attributes

  • Brand: SHENZHEN LONG JING MICRO-ELECTRONICS CO., LTD.
  • Model Series: AO3401
  • Package Type: SOT-23 Plastic-Encapsulate MOSFETS
  • Polarity: P-Channel
  • Mode: Enhancement Mode
  • Certifications: Pb-free (ROHS & Sony 259 specifications)
  • Green Product Option: AO3401L

Technical Specifications

Symbol Parameter Test Conditions Min Typ Max Unit
Maximum Ratings (Ta=25C unless otherwise specified)
VDS Drain-Source voltage -30 V
VGS Gate-Source voltage ±12 V
ID Continuous Drain Current 1) TA = 25 C -4.2 A
ID Continuous Drain Current 1) TA = 70 C -3.5 A
IDM Pulsed Drain Current 2) -30 A
PD Maximum Power Dissipation 1) TA = 25 C 1.4 W
PD Maximum Power Dissipation 1) TA = 70 C 1 W
TJ,TSTG Operating Junction and Storage Temperature Range -55 to +150 C
Thermal Characteristics
RJA Maximum Junction-to-Ambient 1), t ≤ 10s 65 90 °C/W
RJA Maximum Junction-to-Ambient 1), Steady-State 85 125 °C/W
RJL Maximum Junction-to-Lead 3), Steady-State 43 60 °C/W
Electrical Characteristics (TJ=25°C unless otherwise specified)
V(BR)DSS Drain-Source Breakdown Voltage VGS = 0V, ID = -250µA -30 V
IDSS Zero Gate Voltage Drain Current VDS = -24V, VGS = 0V -1 µA
IDSS Zero Gate Voltage Drain Current VDS = -24V,VGS = 0V, TJ = 55°C -5 µA
IGSS Gate-body Leakage current VDS = 0V, VGS = ±12V ±100 nA
VGS(th) Gate-Threshold Voltage VDS = VGS, ID = -250µA -0.7 -1.0 -1.3 V
ID(ON) On state drain current VGS = -4.5V, VDS = -5V -25 A
RDS(on) Drain-Source On-Resistance VGS = -10V, ID = -4.2A 42 50 mΩ
RDS(on) Drain-Source On-Resistance VGS = -10V, ID = -4.2A, TJ=125°C 75 mΩ
RDS(on) Drain-Source On-Resistance VGS = -4.5V, ID = -4A 53 65 mΩ
RDS(on) Drain-Source On-Resistance VGS = -2.5V, ID = -1A 80 120 mΩ
gfs Forward Transconductance VDS = -5V, ID =-5A 7 11 S
VSD Diode Forward Voltage IS = -1A,VGS = 0V -0.75 -1 V
IS Maximum Body-Diode Continuous Current -2.2 A
Dynamic Parameters
Ciss Input Capacitance VGS = 0V VDS = -15V f = 1.0MHz 945 pF
Coss Output Capacitance 115 pF
Crss Reverse Transfer Capacitance 77 pF
Rg Gate resistance VGS = 0V, VDS = 0V, f = 1MHz 6 Ω
Switching Parameters
Qg Total Gate Charge VGS = -4.5V, VDS = -15V, ID = -4A 9.4 nC
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
td(on) Turn-On Delay Time VGS = -10V, VDS = -15V, RL = 3.6Ω, RGEN = 6Ω 6.3 ns
tr Rise Time 3.2 ns
td(off) Turn-Off Delay Time 38.2 ns
tf Fall Time 12 ns
trr Body Diode Reverse Recovery Time IF = -4A, dI/dt = 100A/µs 20.2 ns
Qrr Body Diode Reverse Recovery Charge 11.2 nC

2410121622_ALJ-AO3401_C22400340.pdf

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