30V 60A N Channel Enhancement Mode MOSFET A Power microelectronics AP60N03NF for Battery Protection Applications
Key Attributes
Model Number:
AP60N03NF
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
60A
Operating Temperature -:
-55℃~+150℃
RDS(on):
8.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
183pF
Number:
1 N-channel
Output Capacitance(Coss):
228pF
Input Capacitance(Ciss):
1.844nF
Pd - Power Dissipation:
46W
Gate Charge(Qg):
17.6nC@4.5V
Mfr. Part #:
AP60N03NF
Package:
DFN-8(5x6)
Product Description
Product Overview
The AP60N03NF is a 30V N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, with the capability to operate with gate voltages as low as 4.5V. This MOSFET is ideally suited for battery protection and other switching applications.
Product Attributes
- Brand: APM Microelectronics ()
- Technology: Advanced Trench Technology
- Mode: N-Channel Enhancement Mode
Technical Specifications
| Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| General Features | |||||
| VDS | 30 | V | |||
| ID | 60 | A | |||
| RDS(ON) | VGS=10V | 8.5 | m | ||
| VGS | 10 | V | |||
| Applications | |||||
| Battery protection | |||||
| Load switch | |||||
| Uninterruptible power supply | |||||
| Absolute Maximum Ratings (TC=25 unless otherwise noted) | |||||
| VDS | 30 | V | |||
| VGS | 20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V | 60 | A | ||
| ID@TC=100 | Continuous Drain Current, VGS @ 10V | 38 | A | ||
| ID@TA=25 | Continuous Drain Current, VGS @ 10V | 12 | A | ||
| ID@TA=70 | Continuous Drain Current, VGS @ 10V | 9.6 | A | ||
| IDM | Pulsed Drain Current | 115 | A | ||
| EAS | Single Pulse Avalanche Energy | 57.8 | mJ | ||
| IAS | Avalanche Current | 34 | A | ||
| PD@TC=25 | Total Power Dissipation | 46 | W | ||
| PD@TA=25 | Total Power Dissipation | 2 | W | ||
| TSTG | Storage Temperature Range | -55 | 150 | ||
| TJ | Operating Junction Temperature Range | -55 | 150 | ||
| RJA | Thermal Resistance Junction-Ambient | 62 | /W | ||
| RJC | Thermal Resistance Junction-Case | 2.7 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | |||||
| BVDSS | Drain-Source Breakdown Voltage (VGS=0V , ID=250uA) | 30 | V | ||
| RDS(ON) | Static Drain-Source On-Resistance (VGS=10V , ID=30A) | 6.5 | 8.5 | m | |
| RDS(ON) | Static Drain-Source On-Resistance (VGS=4.5V , ID=15A) | 11 | 14 | V | |
| VGS(th) | Gate Threshold Voltage (VGS=VDS , ID =250uA) | 1.2 | 1.5 | 2.5 | V |
| IDSS | Drain-Source Leakage Current (VDS=24V , VGS=0V , TJ=25) | 1 | uA | ||
| IDSS | Drain-Source Leakage Current (VDS=24V , VGS=0V , TJ=55) | 5 | uA | ||
| IGSS | Gate-Source Leakage Current (VGS=20V , VDS=0V) | 100 | nA | ||
| gfs | Forward Transconductance (VDS=5V , ID=30A) | 38 | S | ||
| Rg | Gate Resistance (VDS=0V , VGS=0V , f=1MHz) | 1.7 | 2.9 | ||
| Qg | Total Gate Charge (4.5V) (VDS=15V , VGS=4.5V , ID=15A) | 12.6 | 17.6 | nC | |
| Td(on) | Turn-On Delay Time (VDD=15V , VGS=10V , RG=3.3 ID=15A) | 4.6 | 9.2 | ns | |
| Tr | Rise Time | 12.2 | ns | ||
| Td(off) | Turn-Off Delay Time | 26.6 | ns | ||
| Tf | Fall Time | 8 | ns | ||
| Ciss | Input Capacitance (VDS=15V , VGS=0V , f=1MHz) | 1317 | 1844 | pF | |
| Coss | Output Capacitance | 163 | 228 | pF | |
| Crss | Reverse Transfer Capacitance | 131 | 183 | pF | |
| IS | Continuous Source Current (VG=VD=0V , Force Current) | 58 | A | ||
| ISM | Pulsed Source Current | 115 | A | ||
| VSD | Diode Forward Voltage (VGS=0V , IS=1A , TJ=25) | 1 | V | ||
| trr | Reverse Recovery Time (IF=30A , dI/dt=100A/s , TJ=25) | 9.2 | nS | ||
| Qrr | Reverse Recovery Charge | 2 | nC | ||
| Package Information | |||||
| Package Type | PDFN5*6-8L | ||||
| Marking | AP60N03NF XXX YYYY | ||||
| Quantity | 5000 | PCS | |||
2410121643_A-Power-microelectronics-AP60N03NF_C3011278.pdf
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