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quality P Channel MOSFET A Power microelectronics AP50P03NF for switching and mobile fast charging circuits factory
quality P Channel MOSFET A Power microelectronics AP50P03NF for switching and mobile fast charging circuits factory

P Channel MOSFET A Power microelectronics AP50P03NF for switching and mobile fast charging circuits

Key Attributes
Model Number: AP50P03NF
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
50A
Operating Temperature -:
-55℃~+150℃
RDS(on):
13mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
237pF
Number:
1 P-Channel
Output Capacitance(Coss):
310pF
Input Capacitance(Ciss):
2.215nF
Pd - Power Dissipation:
45W
Gate Charge(Qg):
22nC@4.5V
Mfr. Part #:
AP50P03NF
Package:
DFN-8(5x6)
Product Description

Product Overview

The AP50P03NF is a P-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, with the capability to operate at gate voltages as low as 4.5V. This MOSFET is ideally suited for battery protection and other switching applications, including wireless impact and mobile phone fast charging.

Product Attributes

  • Brand: APM Microelectronics ()
  • Product ID: AP50P03NF
  • Technology: P-Channel Enhancement Mode MOSFET
  • Origin: Taiwan

Technical Specifications

Parameter Rating Unit Conditions
Drain-Source Voltage (VDS) -30 V VGS=0V
Gate-Source Voltage (VGS) ±25 V
Continuous Drain Current (ID) @ TC=25 -50 A VGS @ -10V
Continuous Drain Current (ID) @ TC=100 -30 A VGS @ -10V
Continuous Drain Current (ID) @ TA=25 -9.6 A VGS @ -10V
Continuous Drain Current (ID) @ TA=70 -7.7 A VGS @ -10V
Pulsed Drain Current (IDM) -150 A
Single Pulse Avalanche Energy (EAS) 125 mJ
Avalanche Current (IAS) -50 A
Total Power Dissipation (PD) @ TC=25 45 W
Total Power Dissipation (PD) @ TA=25 2.0 W
Storage Temperature Range (TSTG) -55 to 150
Operating Junction Temperature Range (TJ) -55 to 150
Thermal Resistance Junction-Ambient (RJA) 62 /W (t ≤10s)
Thermal Resistance Junction-Ambient (RJA) 25 /W
Thermal Resistance Junction-Case (RJC) 2.8 /W
Drain-Source Breakdown Voltage (BVDSS) -30 to -33 V VGS=0V , ID=-250uA
Static Drain-Source On-Resistance (RDS(ON)) 9 to 13 m VGS=-10V , ID=-12A
Static Drain-Source On-Resistance (RDS(ON)) 14 to 20 m VGS=-4.5V , ID=-8A
Gate Threshold Voltage (VGS(th)) -1.0 to -2.5 V VGS=VDS , ID =-250uA
Drain-Source Leakage Current (IDSS) ≤ -1 µA VDS=-24V , VGS=0V , TJ=25
Drain-Source Leakage Current (IDSS) ≤ -5 µA VDS=-24V , VGS=0V , TJ=55
Gate-Source Leakage Current (IGSS) ≤ ±100 nA VGS=±25V , VDS=0V
Forward Transconductance (gfs) 30 S VDS=-5V , ID=-30A
Gate Resistance (Rg) 9 Ω VDS=0V , VGS=0V , f=1MHz
Total Gate Charge (Qg) 22 nC VDS=-15V , VGS=-4.5V , ID=-15A
Gate-Source Charge (Qgs) 8.7 nC
Gate-Drain Charge (Qgd) 7.2 nC
Turn-On Delay Time (Td(on)) 8 ns VDD=-15V , VGS=-10V , RG=3.3Ω ID=-15A
Rise Time (Tr) 73.7 ns
Turn-Off Delay Time (Td(off)) 61.8 ns
Fall Time (Tf) 24.4 ns
Input Capacitance (Ciss) 2215 pF VDS=-15V , VGS=0V , f=1MHz
Output Capacitance (Coss) 310 pF
Reverse Transfer Capacitance (Crss) 237 pF
Continuous Source Current (IS) -45 A VG=VD=0V , Force Current
Pulsed Source Current (ISM) -150 A
Diode Forward Voltage (VSD) -1 V VGS=0V , IS=-1A , TJ=25
Reverse Recovery Time (trr) 19 ns IF=-15A , dI/dt=100A/µs , TJ=25
Reverse Recovery Charge (Qrr) 9 nC
Package Type PDFN5*6-8L

Package Information

Symbol Description Min (mm) Max (mm) Min (Inch) Max (Inch)
A 1.03 1.17 0.0406 0.0461
b 0.34 0.48 0.0134 0.0189
c 0.824 0.0970 0.0324 0.082
D 4.80 5.40 0.1890 0.2126
D1 4.11 4.31 0.1618 0.1697
D2 4.80 5.00 0.1890 0.1969
E 5.95 6.15 0.2343 0.2421
E1 5.65 5.85 0.2224 0.2303
E2 1.60 / 0.0630 /
e 1.27 BSC 0.05 BSC
L 0.05 0.25 0.0020 0.0098
L1 0.38 0.50 0.0150 0.0197
L2 0.38 0.50 0.0150 0.0197
H 3.30 3.50 0.1299 0.1378
I / 0.18 / 0.0070

Ordering Information

Product ID Pack Marking Qty (PCS)
AP50P03NF PDFN5*6-8L AP50P03NF XXX YYYY 5000

2409272301_A-Power-microelectronics-AP50P03NF_C3011442.pdf

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