Small Signal Dual NPN PNP Transistor amsem MMDT5451 Designed for Switching and Audio Frequency Amplifier
Key Attributes
Model Number:
MMDT5451
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
300MHz
Type:
NPN+PNP
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
160V
Mfr. Part #:
MMDT5451
Package:
SOT-363
Product Description
Product Overview
The MMDT5451 is a dual NPN+PNP small signal transistor designed for switching and AF amplifier applications. It features a rugged and reliable construction, meets UL 94 V-0 flammability rating, and is lead-free and RoHS compliant.
Product Attributes
- Brand: An hui Anmei Semiconductor Co.,Ltd.
- Origin: China (implied by company name and domain)
- Certifications: UL 94 V-0 Flammability Rating, RoHS Compliant
Technical Specifications
| Type | Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| NPN Transistor | V(BR)CBO | Ic=100A,IE=0 | 180 | V | ||
| V(BR)CEO | Ic=1mA,IB=0 | 160 | V | |||
| V(BR)EBO | IE=10A,IC=0 | 6 | V | |||
| ICBO | VCB=120V,IE=0 | 50 | nA | |||
| IEBO | VEB =4V, IC=0 | 50 | nA | |||
| hFE | VCE=5V,IC=1mA | 80 | ||||
| hFE | VCE=5V,IC=10mA | 100 | 300 | |||
| hFE | VCE=5V,IC=50mA | 30 | ||||
| VCE(sat) | IC=10mA,IB=1mA | 0.15 | V | |||
| VCE(sat) | IC=50mA,IB=5mA | 0.20 | V | |||
| VBE(sat) | IC=10mA,IB=1mA | 1.0 | V | |||
| fT | VCE=10V, IC=10mA, f=100MHz | 100 | 300 | MHz | ||
| PNP Transistor | V(BR)CBO | Ic=-100A,IE=0 | -160 | V | ||
| V(BR)CEO | Ic=-1mA,IB=0 | -150 | V | |||
| V(BR)EBO | IE=-10A,IC=0 | -5 | V | |||
| ICBO | VCB=-120V,IE=0 | -50 | nA | |||
| IEBO | VEB =-3V, IC=0 | -50 | nA | |||
| hFE | VCE=-5V,IC=-1mA | 50 | ||||
| hFE | VCE=-5V,IC=-10mA | 100 | 300 | |||
| hFE | VCE=-5V,IC=-50mA | 50 | ||||
| VCE(sat) | IC=-10mA,IB=-1mA | -0.20 | V | |||
| VCE(sat) | IC=-50mA,IB=-5mA | -0.50 | V | |||
| VBE(sat) | IC=-10mA,IB=-1mA | -1.0 | V | |||
| fT | VCE=-10V,IC=-10mA, f=100MHz | 100 | 300 | MHz | ||
| Common | PD | Power Dissipation | 200 | mW | ||
| RJA | Thermal Resistance Junction to Ambient | 625 | /W |
2410121322_amsem-MMDT5451_C7529053.pdf
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