N Channel MOSFET ALJ SI2300 Designed for Load Switching Applications in Portable and DC DC Circuits
Key Attributes
Model Number:
SI2300
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.9A
RDS(on):
45mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.2V@50uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
80pF@25V
Input Capacitance(Ciss):
300pF
Pd - Power Dissipation:
400mW
Gate Charge(Qg):
10nC@4.5V
Mfr. Part #:
SI2300
Package:
SOT-23
Product Description
Product Overview
The SI2300 is a N-Channel TrenchFET Power MOSFET designed for applications such as load switching in portable devices and DC/DC converters. It offers a drain-source voltage rating of 20V and is encapsulated in a SOT-23 plastic package.
Product Attributes
- Brand: SHENZHEN LONG JING MICRO-ELECTRONICS CO., LTD.
- Model: SI2300
- Type: N-Channel MOSFET
- Package: SOT-23 Plastic-Encapsulate
- Marking: AOSHB
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Maximum Ratings (Ta=25 C unless otherwise noted) | ||||||
| VDS | Drain-source voltage | 20 | V | |||
| VGS | Gate-source voltage | 10 | V | |||
| ID | Continuous drain current | 2.9 | A | |||
| IS | Continuous Source-Drain Current(Diode Conduction) | 0.6 | A | |||
| PD | Power dissipation | 0.4 | W | |||
| TJ | Operating Junction | 150 | C | |||
| Tstg | Storage temperature | -55 | 150 | C | ||
| RJA | Thermal Resistance from Junction to Ambient (t5s) | 312.5 | C /W | |||
| Electrical Characteristics (Ta=25 C unless otherwise noted) | ||||||
| V(BR)DSS | Drain- source breakdown voltage | VGS = 0 V, ID = 10uA | 20 | V | ||
| VGS(th) | Gate threshold voltage | VGS=VDS, ID = 50uA | 0.50 | 0.95 | 1.2 | V |
| IDSS | Zero gate voltage drain current | VDS = 20 V, VGS = 0 V | 1 | A | ||
| IGSS | Gate-body leakage current | VGS = 10 V, VDS = 0 V | 100 | nA | ||
| RDS(on) | Drain-Source on-state resistancea | VGS = 4.5 V, ID = 2.9 A | 33 | 45 | m | |
| VGS = 2.5 V, ID = 2.5A | 37 | 59 | m | |||
| gfs | Forward transconductancea | VDS 5V ,ID = 2.9A | 8 | S | ||
| VSD | Diode forward voltage | VGS = 0 V, IS = 0.94 A | 0.76 | 1.2 | V | |
| Dynamic Characteristics | ||||||
| Ciss | Input capacitanceb | VGS = 0 V, VDS = 25 V, f = 1 MHz | 300 | pF | ||
| Coss | Output capacitanceb | 120 | pF | |||
| Crss | Reverse transfer capacitanceb | 80 | pF | |||
| Qg | Total gate charge | VDS =10V,VGS=4.5V, ID =3.6A | 4.0 | 10 | nC | |
| Qgs | Gate-source charge | 0.65 | nC | |||
| Qgd | Gate-drain charge | 1.5 | nC | |||
| td(on) | Turn-on delay time | VDD=10V, RL=5.5, ID3.6A, VGEN=4.5V,Rg=6 | 7 | 15 | ns | |
| tr | Rise time | 55 | 80 | ns | ||
| td(off) | Turn-off delay time | 16 | 60 | ns | ||
| tf | Fall time | 10 | 25 | ns | ||
Notes:
a. Pulse Test : Pulse width300s, duty cycle 2%.
b. These parameters have no way to verify.
2410121707_ALJ-SI2300_C22458953.pdf
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