SOT23 package NPN transistor amsem MMBT3904 designed for general purpose amplification and operation
Key Attributes
Model Number:
MMBT3904
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
300MHz
Type:
NPN
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Mfr. Part #:
MMBT3904
Package:
SOT-23
Product Description
Product Overview
The MMBT3904 is an NPN general-purpose amplifier designed for surface mounting in a SOT-23 package. It offers a power dissipation capability of 200 mW and a collector current of 200 mA, with operating and storage junction temperatures ranging from -55 to 150. This RoHS compliant and Green EMC device is suitable for various amplification applications.
Product Attributes
- Brand: Anhui Anmei Semiconductor Co., Ltd.
- Device Marking Code: MMBT3904 1AM
- Certifications: RoHS compliant / Green EMC
- Package: SOT-23
Technical Specifications
| Parameter | Test Conditions | Min | Max | Unit | |
|---|---|---|---|---|---|
| MAXIMUM RATINGS (Ta=25 unless otherwise noted) | |||||
| Collector-Base Voltage (VCBO) | 60 | V | |||
| Collector-Emitter Voltage (VCEO) | 40 | V | |||
| Emitter-Base Voltage (VEBO) | 6 | V | |||
| Collector Current (IC) | 200 | mA | |||
| Collector Power Dissipation (PC) | 200 | mW | |||
| Thermal Resistance (RJA) | Junction To Ambient | 625 | /W | ||
| Junction Temperature (Tj) | 150 | ||||
| Storage Temperature (Tstg) | -55 | +150 | |||
| ELECTRICAL CHARACTERISTICS @ 25C Unless Otherwise Specified | |||||
| Collector-Emitter Breakdown Voltage (VCEO) | IC=1.0mA, IB=0 | 40 | V | ||
| Collector-Base Breakdown Voltage (VCBO) | IC=10A, IE=0 | 60 | V | ||
| Emitter-Base Breakdown Voltage (VEBO) | IE=10A, IC=0 | 6.0 | V | ||
| Collector Cutoff Current (ICBO) | VCB=30V, VBE=3.0V | 50 | nA | ||
| Collector Cutoff Current (ICEX) | VCE=30V, VBE=3.0V | 50 | nA | ||
| DC Current Gain (hFE) | IC=0.1mA,VCE=1.0V | 40 | |||
| DC Current Gain (hFE) | IC=1.0mA,VCE=1.0V | 70 | |||
| DC Current Gain (hFE) | IC=10mA, VCE=1.0V | 100 | |||
| DC Current Gain (hFE) | IC=50mA,VCE=1.0V | 60 | |||
| DC Current Gain (hFE) | IC=100mA,VCE=1.0V | 30 | |||
| Collector-Emitter Saturation Voltage (VCE(sat)) | IC=10mA,IB=1.0mA | 0.2 | V | ||
| Collector-Emitter Saturation Voltage (VCE(sat)) | IC=50mA,IB=5.0mA | 0.3 | V | ||
| Base-Emitter Saturation Voltage (VBE(sat)) | IC=10mA,IB=1.0mA | 0.65 | 0.85 | V | |
| Base-Emitter Saturation Voltage (VBE(sat)) | IC=50mA,IB=5.0mA | 0.95 | V | ||
| Current Gain-Bandwidth Product (fT) | IC=10mA, VCE=20V,f=100MHz | 300 | MHZ | ||
| Output Capacitance (Cobo) | VCB=5.0V, IE=0, f=1.0MHz | 4.0 | PF | ||
| Input Capacitance (Cibo) | VBE=0.5V, IC=0, f=1.0MHz | 8.0 | PF | ||
| Noise Figure (NF) | IC=100A, VCE=5.0V, RS=1.0k f=10Hz to 15.7kHz | 5.0 | dB | ||
| SWITCHING CHARACTERISTICS | |||||
| Delay Time (td) | VCC=3.0V,VBE=0.5V IC=10mA,IB1=1.0mA | 35 | ns | ||
| Rise Time (tr) | 35 | ns | |||
| Storage Time (ts) | VCC=3.0V,IC=10mA IB1=IB2=1.0mA | 200 | ns | ||
| Fall Time (tf) | 50 | ns | |||
2311290959_amsem-MMBT3904_C7529038.pdf
Related Products
High surge current fast recovery rectifier diode ZHIDE MURS220 with plastic molded epoxy UL 94V 0 flame retardant
Product OverviewThe MURS220-MURS2100 series are plastic encapsulated epitaxial fast recovery rectifier diodes designed for high-reliability applications. They feature low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering (260/10 seconds). The ...
IGBT power module YANGJIE MG10P12P3 optimized for motor drivers AC DC servo drives and UPS systems
Product OverviewThe MG10P12P3 S-M452 is a high-performance IGBT module designed for demanding applications such as motor drivers, AC/DC servo drive amplifiers, and Uninterruptible Power Supplies (UPS). It features low switching losses, low VCE(sat), a positive temperature coefficient, and an ...
Zener diode YANGJIE BZT52C3V0SQ featuring moisture sensitivity level 1 and solderable tin plated leads
Product OverviewThe BZT52C2V4SQ thru BZT52C47SQ series are small signal Zener diodes designed for general regulation functions, including automotive applications. They feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. These diodes offer ...
Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor
Product Overview The MACOM CGHV40050 is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for general-purpose, broadband RF and microwave applications up to 4 GHz. Operating from a 50-volt rail, this device offers high efficiency, high gain, and wide bandwidth ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
