SOT 23 package PNP transistor amsem BC807-25 with 300mW power dissipation and 500mA collector current
Key Attributes
Model Number:
BC807-25
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
5V
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
PNP
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
BC807-25
Package:
SOT-23
Product Description
Product Overview
The BC807 is a PNP general-purpose amplifier transistor designed for surface mount applications. It offers a power dissipation capability of 300mW and a collector current of up to 500mA. This RoHS compliant and Green EMC transistor is suitable for a wide range of amplification tasks.
Product Attributes
- Brand: Anhui Anmei Semiconductor Co.,Ltd.
- Origin: China
- Package: SOT-23
- Certifications: RoHS compliant / Green EMC
Technical Specifications
| Parameter | Symbol | Conditions | Min | Max | Unit |
| Collector-Emitter Breakdown Voltage | VCEO | IC=-10mA, IB=0 | -45 | V | |
| Collector-Base Breakdown Voltage | VCBO | IC=-10A, IE=0 | -50 | V | |
| Emitter-Base Breakdown Voltage | VEBO | IE=-10A, IC=0 | -5.0 | V | |
| Collector Cutoff Current | ICBO | VCB=-45V IE=0V | -100 | nA | |
| Collector Cutoff Current | ICEO | VCE=-40V, IE=0V | -200 | nA | |
| Collector Cutoff Current | IEBO | VEB=-4V, VBE=0V | -100 | nA | |
| DC Current Gain (hFE(1)) | hFE(1) | IC=-100mA,VCE=-1V | 100 | 600 | |
| DC Current Gain (hFE(2)) | hFE(2) | IC=-500mA, VCE=-1V | 40 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=-500mA,IB=-50mA | 0.7 | V | |
| Base-Emitter Saturation Voltage | VBE(sat) | IC=-500mA,IB=-50mA | 1.2 | V | |
| Current Gain-Bandwidth Product | fT | IC=-10mA, VCE=-5.0V,f=100MHz | 100 | MHz | |
| Operating and Storage Junction Temperatures | Tj, TSTG | -55 | 150 | ||
| Collector Power Dissipation | PC | Ta=25 | 300 | mW | |
| Thermal Resistance From Junction To Ambient | R JA | 417 | /W |
2410121532_amsem-BC807-25_C7528926.pdf
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