Low RDS on Trench MOSFET Analog Power AMA460N TI PF N Channel Device with Fast Switching Performance
Key Attributes
Model Number:
AMA460N-TI-PF
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
8.7A
Operating Temperature -:
-55℃~+150℃
RDS(on):
33mΩ@4.5V,5.6A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
82pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
1.507nF@15V
Pd - Power Dissipation:
3W
Gate Charge(Qg):
8.6nC@4.5V
Mfr. Part #:
AMA460N-TI-PF
Package:
PDFN-6-EP(2x2)
Product Description
Product Overview
The Analog Power AMA460N is an N-Channel 60-V MOSFET featuring low rDS(on) trench technology, low thermal impedance, and fast switching speed. It is suitable for DC/DC conversion circuits and motor drives.
Product Attributes
- Brand: Analog Power
- Model: AMA460N
- Type: N-Channel MOSFET
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDS | 60 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TA=25°C | 8.7 | A | ||
| Continuous Drain Current | ID | TA=70°C | 6.9 | A | ||
| Pulsed Drain Current | IDM | 40 | A | |||
| Continuous Source Current (Diode Conduction) | IS | TA=25°C | 4.1 | A | ||
| Continuous Source Current (Diode Conduction) | IS | TA=70°C | 1.9 | A | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | ||
| Power Dissipation | PD | Steady State, TA=25°C | 40 | W | ||
| Thermal Resistance Junction-to-Ambient | RθJA | Surface Mounted on 1” x 1” FR4 Board | 90 | °C/W | ||
| Gate-Source Threshold Voltage | VGS(th) | VDS = VGS, ID = 250 µA | 1 | V | ||
| Gate-Body Leakage | IGSS | VDS = 0 V, VGS = ±20 V | ±100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 48 V, VGS = 0 V | 1 | µA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 48 V, VGS = 0 V, TJ = 55°C | 25 | µA | ||
| On-State Drain Current | ID(on) | VDS = 5 V, VGS = 10 V | 13 | A | ||
| Drain-Source On-Resistance | rDS(on) | VGS = 10 V, ID = 6.9 A | 27 | mΩ | ||
| Drain-Source On-Resistance | rDS(on) | VGS = 4.5 V, ID = 5.6 A | 33 | mΩ | ||
| Forward Transconductance | gfs | VDS = 15 V, ID = 6.9 A | 14 | S | ||
| Diode Forward Voltage | VSD | IS = 2.1 A, VGS = 0 V | 0.78 | V | ||
| Total Gate Charge | Qg | VDS = 30 V, RL = 4.4 Ω, ID = 6.9 A, VGEN = 10 V, RGEN = 6 Ω | 8.6 | nC | ||
| Gate-Source Charge | Qgs | 2.5 | nC | |||
| Gate-Drain Charge | Qgd | 3.7 | nC | |||
| Turn-On Delay Time | td(on) | 5 | ns | |||
| Rise Time | tr | 6 | ns | |||
| Turn-Off Delay Time | td(off) | 31 | ns | |||
| Fall Time | tf | 9 | ns | |||
| Input Capacitance | Ciss | VDS = 15 V, VGS = 0 V, f = 1 Mhz | 1507 | pF | ||
| Output Capacitance | Coss | 89 | pF | |||
| Reverse Transfer Capacitance | Crss | 82 | pF |
2411220158_Analog-Power-AMA460N-TI-PF_C495442.pdf
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