Power MOSFET ANHI ASM65R265E Silicon N Channel Type for PC Power Supplies and LED Lighting Solutions
Key Attributes
Model Number:
ASM65R265E
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
15A
RDS(on):
230mΩ
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3.5V
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-channel
Input Capacitance(Ciss):
1.16nF@400V
Pd - Power Dissipation:
125W
Gate Charge(Qg):
23.2nC
Mfr. Part #:
ASM65R265E
Package:
DFN8x8
Product Description
Product Overview
The ASM65R265E is a Silicon N-Channel MOS Power MOSFET designed for single-ended flyback or two-transistor forward topologies. It offers a low drain-source on-resistance of 230m (typ.) and is easy to control with a gate switching enhancement mode. Key applications include PC power supplies, PD adaptors, LCD & PDP TVs, and LED lighting.
Product Attributes
- Brand: ASM
- Type: Silicon N-Channel MOS
- Mode: Enhancement mode
Technical Specifications
| Parameter | Symbol | Value | Unit | Note / Test Condition |
|---|---|---|---|---|
| Key Performance Parameters | ||||
| Drain-Source Breakdown Voltage | VDS @ Tj,max | 700 | V | |
| Drain-Source On-Resistance (max) | RDS(on),max | 265 | m | |
| Gate Charge (typ) | Qg,typ | 23.2 | nC | |
| Pulsed Drain Current | ID,pulse | 58 | A | TC=25C |
| Maximum Ratings | ||||
| Continuous drain current | ID | - | 15 A | TC=25C, Limited by Tj,max. Maximum Duty Cycle D = 0.50 |
| Pulsed drain current | ID,pulse | - | 58 A | TC=25C, Pulse width tp limited by Tj,max |
| Avalanche energy, single pulse | EAS | - | 198 mJ | Tc=25,VDD=50V, Id=6.3A, L=10mH, RG=25 |
| Avalanche current, single pulse | IAR | - | 6.3 A | Tc=25,VDD=50V, L=10mH, RG=25 |
| Gate source voltage (static) | VGS | -30 | 30 V | static |
| Power dissipation | Ptot | - | 125 W | TC=25C |
| Storage temperature | Tstg | -55 | 150 C | |
| Operating junction temperature | Tj | -55 | 150 C | |
| Thermal Characteristics | ||||
| Thermal resistance, junction - case | RthJC | - | 0.71 C/W | |
| Thermal resistance, junction - ambient | RthJA | - | 62 C/W | device on PCB, minimal footprint |
| Static Characteristics | ||||
| Drain-source breakdown voltage | V(BR)DSS | 650 | V | VGS=0V, ID=250uA |
| Gate threshold voltage | V(GS)th | 2.8 | 4.2 V | VDS=VGS, ID=250uA |
| Zero gate voltage drain current | IDSS | - | 1 uA | VDS=650V, VGS=0V, Tj=25C |
| Gate-source leakage current | IGSS | - | 100 nA | VGS=30V, VDS=0V |
| Drain-source on-state resistance | RDS(on) | - | 230 265 m | VGS=10V, ID=5.5A, Tj=25C |
| Gate resistance (Intrinsic) | RG | - | 32 | f=1MHz, open drain |
| Dynamic Characteristics | ||||
| Input capacitance | Ciss | - | 1160 pF | VGS=0V, VDS=400V, f=250kHz |
| Output capacitance | Coss | - | 29.1 pF | VGS=0V, VDS=400V, f=250kHz |
| Reverse transfer capacitance | Crss | - | 0.8 pF | VGS=0V, VDS=400V, f=250kHz |
| Turn-on delay time | td(on) | - | 21.8 ns | VDD=400V,VGS=13V,ID=5.2A, RG=10.2 |
| Rise time | tr | - | 23.4 ns | VDD=400V,VGS=13V,ID=5.2A, RG=10.2 |
| Turn-off delay time | td(off) | - | 122.8 ns | VDD=400V,VGS=13V,ID=5.2A, RG=10.2 |
| Fall time | tf | - | 21.4 ns | VDD=400V,VGS=13V,ID=5.2A, RG=10.2 |
| Gate Charge Characteristics | ||||
| Gate to source charge | Qgs | - | 5.4 nC | VDD=400V, ID=5.2A, VGS=0 to 10V |
| Gate to drain charge | Qgd | - | 8.1 nC | VDD=400V, ID=5.2A, VGS=0 to 10V |
| Gate charge total | Qg | - | 23.2 nC | VDD=400V, ID=5.2A, VGS=0 to 10V |
| Reverse Diode Characteristics | ||||
| Diode forward voltage | VSD | - | 0.74 V | VGS=0V, IF=1A, Tj=25C |
| Reverse recovery time | trr | - | 210.5 ns | VR=400V, IF=5.2A, diF/dt=100A/s |
| Reverse recovery charge | Qrr | - | 1.7 uC | VR=400V, IF=5.2A, diF/dt=100A/s |
| Peak reverse recovery current | Irrm | - | 18 A | VR=400V, IF=5.2A, diF/dt=100A/s |
2410121516_ANHI-ASM65R265E_C5440041.pdf
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