RoHS compliant NPN transistor amsem BC817-40 with 300mW power dissipation and wide temperature range

Key Attributes
Model Number: BC817-40
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
5V
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
BC817-40
Package:
SOT-23
Product Description

Product Overview

The BC817 is an NPN general-purpose amplifier transistor designed for surface mount applications. It is capable of 300mW of power dissipation and operates within a junction temperature range of -55 to 150. The device comes in a RoHS compliant and Green EMC SOT-23 package.

Product Attributes

  • Brand: Anhui Anmei Semiconductor Co.,Ltd.
  • Origin: China
  • Package: SOT-23
  • Certifications: RoHS compliant / Green EMC

Technical Specifications

ParameterSymbolTest ConditionsMinMaxUnit
Collector-Emitter Breakdown VoltageVCEOIC=10mA, IB=045V
Collector-Base Breakdown VoltageVCBOIC=10A, IE=050V
Emitter-Base Breakdown VoltageVEBOIE=1A, IC=05.0V
Collector Cutoff CurrentICBOVCB=45V, IE=0V100nA
Emitter Cut-off CurrentIEBOVEB=4V,IC=0100nA
DC Current Gain (hFE)hfe(1)IC=100mA,VCE=1V100600
DC Current Gain (hFE)hfe(2)IC=500mA,VCE=1V
Collector-Emitter Saturation VoltageVCE(sat)IC=500mA,IB=50mA0.7V
Base-Emitter Saturation VoltageVBE(sat)IC=500mA,IB=50mA1.2V
Transition FrequencyfTIC=10mA, VCE=5V,f=100MHz100MHZ
Collector CapacitanceCobVCB=10.0V, f=1MHz10PF
Power DissipationPCTa=25300mW
Operating and Storage Junction TemperaturesTj, Tstg-55150
Thermal Resistance Junction to AmbientR JA417/W
Rankhfe(1) RangeMarking
BC817-16100-2506A
BC817-25160-4006B
BC817-40250-6006C
DevicePackageShippingTape wideEmboss pitchTape specificationNotes
BC817SOT23Tape & Reel 3000pcs /7 Reel8mm4mmConductive

2410121532_amsem-BC817-40_C7528930.pdf

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