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quality Power Switching Silicon MOSFET ANHI AUP034N06 N Channel Device with High Speed Switching Performance factory
quality Power Switching Silicon MOSFET ANHI AUP034N06 N Channel Device with High Speed Switching Performance factory

Power Switching Silicon MOSFET ANHI AUP034N06 N Channel Device with High Speed Switching Performance

Key Attributes
Model Number: AUP034N06
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
210A
Operating Temperature -:
-55℃~+175℃
RDS(on):
3.4mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
4.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
122.9pF
Input Capacitance(Ciss):
5.744nF
Output Capacitance(Coss):
1.406nF
Pd - Power Dissipation:
230W
Gate Charge(Qg):
85.34nC@10V
Mfr. Part #:
AUP034N06
Package:
TO-220
Product Description

Product Overview

The AUP034N06 is a Silicon N-Channel MOSFET designed for high-speed power switching applications. It features low drain-source on-resistance (RDS(on) = 3m typical), enhanced body diode dv/dt capability, and superior avalanche ruggedness. This MOSFET is ideal for synchronous rectification in Switched-Mode Power Supplies (SMPS), hard switching circuits, and high-speed DC/DC converters within the telecommunications and industrial sectors.

Product Attributes

  • Brand: AUP (implied by part number)
  • Material: Silicon
  • Channel Type: N-Channel
  • Package: TO220

Technical Specifications

Parameter Symbol Value Unit Note / Test Condition
Drain-source breakdown voltage V(BR)DSS 60 V VGS=0V, ID=250uA
Gate threshold voltage V(GS)th 2.5 - 4.5 V VDS=VGS, ID=250uA
Zero gate voltage drain current IDSS - 1 uA VDS=60V, VGS=0V, Tj=25C
Gate-source leakage current IGSS - 100 nA VGS=20V, VDS=0V
Drain-source on-state resistance RDS(on) 3 - 3.4 m VGS=10V, ID=20A, Tj=25C
Gate resistance (Intrinsic) RG 2 f =1MHz, VDS=0V, VGS=0V
Transconductance Gfs 94.72 S VDS=10V, ID=20A
Input capacitance Ciss 5744 pF VGS=0V, VDS=30V, f=1MHz
Output capacitance Coss 1406 pF VGS=0V, VDS=30V, f=1MHz
Reverse transfer capacitance Crss 122.9 pF VGS=0V, VDS=30V, f=1MHz
Turn-on delay time td(on) 19 ns VDS=30V,VGS=10V,ID=50A,RG=3
Rise time tr 29 ns VDS=30V,VGS=10V,ID=50A,RG=3
Turn-off delay time td(off) 45 ns VDS=30V,VGS=10V,ID=50A,RG=3
Fall time tf 22 ns VDS=30V,VGS=10V,ID=50A,RG=3
Gate to source charge Qgs 24.36 nC VDD=30V, ID=20A, VGS=10V
Gate to drain charge Qgd 17.79 nC VDD=30V, ID=20A, VGS=10V
Gate charge total Qg 85.34 nC VDD=30V, ID=20A, VGS=10V
Gate plateau voltage Vplateau 4.39 V VDD=30V, ID=20A, VGS=10V
Continuous drain current at silicon ID 210 A TC=25C, Limited by Tj,max, D = 0.50
Continuous drain current at package ID 168 A TC=25C, Limited by Tj,max, D = 0.50
Continuous drain current ID 150 A TC=100C, Limited by Tj,max, D = 0.50
Pulsed drain current ID,pulse 840 A TC=25C, Pulse width tp limited by Tj,max
Avalanche energy, single pulse EAS 471 mJ Tc=25,VDD=50V,Vgs=10V, L=0.5mH, RG=25
Avalanche current, single pulse IAR 43.4 A Tc=25,VDD=50V,Vgs=10V, L=0.5mH, RG=25
Gate source voltage (static) VGS -20 - 20 V static
Power dissipation Ptot 230 W TC=25C
Storage temperature Tstg -55 - 175 C
Operating junction temperature Tj -55 - 175 C
Soldering Temperature TL 300 C Distance of 1.6mm from case for 10s
Thermal resistance, junction - case RthJC 0.65 C/W
Thermal resistance, junction - ambient RthJA 62 C/W device on PCB, minimal footprint
Continuous Source Current at silicon ISD 210 A
Diode forward voltage VSD 0.69 V Vgs=0V Is=1A, Tj=25C
Reverse recovery time trr 66.67 ns Vgs=0V, IF=50A, diF/dt=100A/s
Reverse recovery charge Qrr 84 nC Vgs=0V, IF=50A, diF/dt=100A/s
Peak Reverse Recovery Current Irrm 1.93 A Vgs=0V, IF=50A, diF/dt=100A/s

2410121545_ANHI-AUP034N06_C18722999.pdf

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