Power MOSFET ARK micro DMD8515E 850V N Channel Depletion Mode Device for Fast Switching Applications
Key Attributes
Model Number:
DMD8515E
Product Custom Attributes
Drain To Source Voltage:
850V
Current - Continuous Drain(Id):
1A
Operating Temperature -:
-55℃~+150℃
RDS(on):
30Ω@0V
Gate Threshold Voltage (Vgs(th)):
1.5V@8uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
4.1pF
Number:
1 N-channel
Output Capacitance(Coss):
20.7pF
Input Capacitance(Ciss):
393.4pF
Pd - Power Dissipation:
36W
Gate Charge(Qg):
13.6nC
Mfr. Part #:
DMD8515E
Package:
TO-252
Product Description
Product Overview
The ARK Microelectronics DMS8515E/DMD8515E is an 850V N-Channel Depletion-Mode Power MOSFET designed for applications requiring high breakdown voltage and fast switching speeds. It features ESD improved capability, a proprietary advanced planar technology, and a rugged polysilicon gate cell structure. This device is suitable for use in audio amplifiers, start-up circuits, protection circuits, ramp generators, current regulators, and active loads.
Product Attributes
- Brand: ARK Microelectronics Co., Ltd.
- Certifications: RoHS Compliant, Halogen-free Available
Technical Specifications
| Part Number | Package | Marking | Remark | VDSX (V) | ID (A) | IDM (A) | PD (W) | VGS (V) | TL () | TJ & TSTG () | RJC (/W) | RDS(ON) (Typ.) () | IDSS(Min.) (mA) | BVDSX (V) | ID(OFF) (A) | IGSS (A) | IDSS (mA) | VGS(OFF) (V) | gfs (mS) | Ciss (pF) | Coss (pF) | Crss (pF) | Qg (nC) | Qgs (nC) | Qgd (nC) | td(on) (ns) | trise (ns) | td(off) (ns) | tfall (ns) | VSD (V) |
| DMS8515E | SOT-223 | 8515 | Halogen Free | 850 | 0.2 | 0.8 | 1.5 | 20 | 300 | -55 to 150 | 83 | 15 | 200 | 850 | 10 | 20 | 200 | -4.0 to -1.5 | 720 | 393.4 | 20.7 | 4.1 | 13.6 | 4.0 | 3.6 | 18.1 | 10.5 | 35.6 | 94.0 | 1.2 |
| DMD8515E | TO-252 | 8515 | Halogen Free | 850 | 1 | 3 | 36 | 20 | 300 | -55 to 150 | 3.47 | 15 | 200 | 850 | 10 | 20 | 200 | -4.0 to -1.5 | 720 | 393.4 | 20.7 | 4.1 | 13.6 | 4.0 | 3.6 | 18.1 | 10.5 | 35.6 | 94.0 | 1.2 |
2410171116_ARK-micro-DMD8515E_C41432014.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities
Product OverviewThe YJA3134KB is a N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power LV MOSFET technology. It offers high power and current handling capabilities, ESD protection up to 2.0KV (HBM), and meets UL 94 V-0 flammability rating. This device is designed for PWM ...
Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Product OverviewThe YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking ...
Planar die Zener diode XZT BZT52B9V1S designed for medium current applications and automated assembly
Product OverviewThe BZT52B2V4S thru BZT52B43S series are Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in a lead-free version. These diodes feature a planar die construction.Product AttributesBrand: ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
