60V N Channel MOSFET ASDsemi ASDM60N50KQ-R designed for power management and industrial applications
Key Attributes
Model Number:
ASDM60N50KQ-R
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
50A
RDS(on):
9mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
16pF
Number:
-
Output Capacitance(Coss):
255pF
Input Capacitance(Ciss):
880pF
Pd - Power Dissipation:
62.5W
Gate Charge(Qg):
18nC@10V
Mfr. Part #:
ASDM60N50KQ-R
Package:
TO-252
Product Description
Product Overview
The Ascend Semiconductor ASDM60N50KQ is a 60V N-Channel MOSFET designed for high-performance applications. It features low gate charge, low Ciss, and fast switching capabilities, making it ideal for power management solutions. The device is 100% avalanche tested and offers improved dv/dt capability, ensuring reliability and efficiency in demanding environments. Its robust design and excellent electrical characteristics make it suitable for various industrial and electronic applications.
Product Attributes
- Brand: Ascend Semiconductor Co.,Ltd
- Product Line: Ascend
- Model Series: ASDM60N50KQ
- Package Type: TO-252-2L
- Technology: N-Channel MOSFET
- Origin: China (implied by company name and location)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | VDS | 60 | V | |||
| RDS(on) @ VGS=10V | 8.5 | m | ||||
| Drain Current | ID | 50 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (TC=25 unless otherwise noted) | 60 | V | ||
| Gate-Source Voltage | VGS | 20 | V | |||
| Drain Current-Continuous | ID | (TC=25 unless otherwise noted) | 50 | A | ||
| Drain Current-Continuous (TC=100) | ID (100) | 42 | A | |||
| Pulsed Drain Current | IDM | 200 | A | |||
| Maximum Power Dissipation | PD | 62.5 | W | |||
| Derating factor | 0.73 | W/ | ||||
| Single pulse avalanche energy (Note 5) | EAS | 31 | mJ | |||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | To | 150 | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 60 | - | - | V |
| Breakdown Temperature Coefficient | BVDSS /TJ | VGS=10V, ID=20A | - | 0.021 | - | V/ |
| Zero Gate Voltage Drain Current | IDSS | VDS=60V, VGS=0V | - | - | 1 | uA |
| Gate-Body Leakage Current, Forward | IGSSF | VGS=20V, VDS=0V | - | - | 100 | nA |
| Gate-Body Leakage Current, Reverse | IGSSR | VGS=-20V, VDS=0V | - | - | -100 | nA |
| Gate-Source Threshold Voltage | VGS(th) | VDS=VGS, ID=250uA | 1.0 | - | 2.5 | V |
| Drain-Source On-State Resistance | RDS(on) | VGS=10V, ID=50A | - | 8.5 | - | m |
| Drain-Source On-State Resistance | RDS(on) | VGS=4.5V, ID=20A | - | 15 | - | m |
| Input Capacitance | Ciss | VDS=30V, VGS=0V, f=1.0MHz | - | 880 | - | pF |
| Output Capacitance | Coss | VDS=30V, VGS=0V, f=1.0MHz | - | 255 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS=30V, VGS=0V, f=1.0MHz | - | 16 | - | pF |
| Turn-On Delay Time | td(on) | VDD=30V, VGS=10V, RG=2.7 (Note 3,4) | - | 8.8 | - | ns |
| Turn-On Rise Time | tr | VDD=30V, VGS=10V, RG=2.7 (Note 3,4) | - | 42 | - | ns |
| Turn-Off Delay Time | td(off) | VDD=30V, VGS=10V, RG=2.7 (Note 3,4) | - | 21.5 | - | ns |
| Turn-Off Fall Time | tf | VDD=30V, VGS=10V, RG=2.7 (Note 3,4) | - | 5.4 | - | ns |
| Total Gate Charge | Qg | VDD=30V, ID=12A, VGS=10V (Note 3,4) | - | 18 | - | nC |
| Gate-Source Charge | Qgs | VDD=30V, ID=12A, VGS=10V (Note 3,4) | - | 3.7 | - | nC |
| Gate-Drain Charge | Qgd | VDD=30V, ID=12A, VGS=10V (Note 3,4) | - | 2.9 | - | nC |
| Drain-Source Body Diode Characteristics and Maximum Ratings | ||||||
| Diode Forward Voltage | VSD | IS=1A, VGS=0V | - | - | 1.0 | V |
| Reverse Recovery Time | trr | VR=30V, IF=12A, dIF/dt=300A/us | - | 78 | - | ns |
| Reverse Recovery Charge | Qrr | VR=30V, IF=12A, dIF/dt=300A/us | - | 192 | - | nC |
Ordering and Marking Information
| Device No. | Marking | Package | Packing Quantity |
|---|---|---|---|
| ASDM60N50KQ-R | 60N50 | TO-252 | 2500/Reel |
2410121714_ASDsemi-ASDM60N50KQ-R_C2972878.pdf
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