N Channel MOSFET transistor ANHI ASD65R550E designed for LED lighting and boost PFC power conversion

Name: N Channel MOSFET transistor ANHI ASD65R550E designed for LED lighting and boost PFC power conversion
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: ASD65R550E
Availability: InStock

Key Attributes

Model Number: ASD65R550E

Product Custom Attributes

Drain To Source Voltage:

700V

Current - Continuous Drain(Id):

Operating Temperature -:

-55℃~+150℃

RDS(on):

550mΩ

Gate Threshold Voltage (Vgs(th)):

3.5V

Reverse Transfer Capacitance (Crss@Vds):

3.55pF

Input Capacitance(Ciss):

599pF

Pd - Power Dissipation:

Gate Charge(Qg):

8nC

Mfr. Part #:

ASD65R550E

Package:

TO-252

Product Description

Product Overview

The ASA65R550E, ASU65R550E, and ASD65R550E are N-Channel MOSFET transistors designed for high-efficiency power conversion applications. These devices are optimized for Boost PFC topologies, power adapters, LCD & PD applications, and LED lighting. Key features include low drain-source on-resistance, easy gate control, and enhanced switching performance, making them suitable for flyback or two-ended flyback converters.

Product Attributes

Brand: Not specified
Origin: Silicon
Material: Not specified
Color: Not specified
Certifications: Not specified

Technical Specifications

Models and Packaging

Part Name	Package	Marking
ASA65R550E	TO220F	ASA65R550E
ASU65R550E	TO251	ASU65R550E
ASD65R550E	TO252	ASD65R550E

Key Performance and Internal Circuit

Parameter	Value
VDS @ Tj,max	700 V
RDS(on),max	0.55
Qg,typ	8.0 nC
ID,pulse	40 A
Body diode	0E, 50E
Switching Vth	2.8 to 4.2 V
MOSFET	N-Channel
Application	Switch, single-ended flyback, LCD & PD adapter, TV and LED lighting.
Resistance	RDS(ON) = 0.50 (typ.)
Gate	VGS = 10V
dv/dt	3 V/ns

Maximum Ratings

Parameter	Symbol	Min.	Typ.	Max.	Unit	Note / Test Condition
Continuous drain current	ID	-	-	8	A	TC=25C, Limited by Tj,max. Maximum Duty Cycle D = 0.50
Pulsed drain current	ID,pulse	-	-	40	A	TC=25C, Pulse width tp limited by Tj,max
Avalanche energy, single pulse	EAS	-	-	624	mJ	VDD=50V; L=49.9mH
Avalanche energy, repetitive	EAR	-	-	123	mJ	VDD=50V; L=49.9mH
Avalanche current, single pulse	IAS	-	-	5.0	A	-
MOSFET dv/dt ruggedness	dv/dt	-	-	11	V/ns	VDS=0...150V
Gate source voltage (static)	VGS	-20	-	20	V	static
Gate source voltage (dynamic)	VGS	-30	-	30	V	AC (f>1 Hz)
Power dissipation	Ptot	-	-	178.1	W	TC=25C
Storage temperature	Tstg	-55	-	150	C	-
Operating junction temperature	Tj	-55	-	150	C	-
Continuous diode forward current	IS	-	-	48	A	TC=25C
Diode pulse current	IS,pulse	-	-	151	A	TC=25C, Pulse width tp limited by Tj,max
Reverse diode dv/dt	dv/dt	-	-	15	V/ns	VDS=0...400V, ISD<=48A, Tj=25C
Maximum diode commutation speed	diF/dt	-	-	50	A/s	VDS=0...400V, ISD<=48A, Tj=25C
Insulation withstand voltage	VISO	-	-	n.a.	V	Vrms, TC=25C, t=1min

Thermal Characteristics (TO220 FullPAK)

Parameter	Symbol	Min.	Typ.	Max.	Unit	Note / Test Condition
Thermal resistance, junction - case	RthJC	-	-	3.65	C/W	-
Thermal resistance, junction - ambient	RthJA	-	-	80	C/W	device on PCB, minimal footprint

Thermal Characteristics (TO251 and TO252)

Parameter	Symbol	Min.	Typ.	Max.	Unit	Note / Test Condition
Thermal resistance, junction - case	RthJC	-	-	1.06	C/W	-
Thermal resistance, junction - ambient	RthJA	-	-	62	C/W	device on PCB, minimal footprint

Static Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Note / Test Condition
Drain-source breakdown voltage	V(BR)DSS	655	-	-	V	VGS=0V, ID=10mA
Gate threshold voltage	V(GS)th	2.8	4.2	-	V	VDS=VGS, ID=250uA
Zero gate voltage drain current	IDSS	-	-	100	nA	VDS=650V, VGS=0V, Tj=25C
Gate-source leakage current	IGSS	-	-	100	nA	VGS=30V, VDS=0V
Drain-source on-state resistance	RDS(on)	-	0.50	0.55		VGS=10V, ID=4A, Tj=25C
Gate resistance (Intrinsic)	RG	-	25	-		f=1MHz, open drain
Gate resistance (Integrated)	RG	-	77	-		f=1MHz, open drain

Dynamic Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Note / Test Condition
Input capacitance	Ciss	-	599	-	pF	VGS=0V, VDS=50V, f=10kHz
Output capacitance	Coss	-	76	-	pF	VGS=0V, VDS=50V, f=10kHz
Reverse transfer capacitance	Crss	-	3.55	-	pF	VGS=0V, VDS=50V, f=10kHz
Turn-on delay time	td(on)	-	26.8	-	ns	VDD=400V,VGS=13V,ID=3A, RG=6.8
Rise time	tr	-	24.8	-	ns	VDD=400V,VGS=13V,ID=3A, RG=6.8
Turn-off delay time	td(off)	-	127.6	-	ns	VDD=400V,VGS=13V,ID=3A, RG=6.8
Fall time	tf	-	21.2	-	ns	VDD=400V,VGS=13V,ID=3A, RG=6.8

Gate Charge Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Note / Test Condition
Gate to source charge	Qgs	-	2.6	-	nC	VDD=400V, ID=3A, VGS=0 to 10V
Gate to drain charge	Qgd	-	1.7	-	nC	VDD=400V, ID=3A, VGS=0 to 10V
Gate charge total	Qg	-	8.0	-	nC	VDD=400V, ID=3A, VGS=0 to 10V
Gate plateau voltage	Vplateau	-	6.6	-	V	VDD=400V, ID=3A, VGS=0 to 10V

Reverse Diode Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Note / Test Condition
Diode forward voltage	VSD	-	0.81	-	V	VGS=0V, IF=3.8 A, Tj=25C
Reverse recovery time	trr	-	174	-	ns	VR=400V, IF=3 A, diF/dt=100A/s
Reverse recovery charge	Qrr	-	1200	-	nC	VR=400V, IF=3 A, diF/dt=100A/s
Peak reverse recovery current	Irrm	-	13.5	-	A	VR=400V, IF=3 A, diF/dt=100A/s

Package Outlines

Figure 2: Outline PG-TO252

Figure 3: Outline PG-TO220F

Figure 3: Outline PG-TO251

Revision History

Revision	Date	Subjects (major changes since last revision)
1.0	2019-04-11	Preliminary version
2.0	2019-11-07	Fine tune outline and add Crss test data.etc

2410121257_ANHI-ASD65R550E_C5440011.pdf

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N Channel MOSFET transistor ANHI ASD65R550E designed for LED lighting and boost PFC power conversion