Enhancement Mode N Channel MOSFET ASA60R330E Designed for Boost PFC Switches and Flyback Converters
Key Attributes
Model Number:
ASA60R330E
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
11A
RDS(on):
330mΩ
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.8V
Reverse Transfer Capacitance (Crss@Vds):
5.3pF@50V
Number:
1 N-channel
Input Capacitance(Ciss):
901pF@50V
Pd - Power Dissipation:
32W
Gate Charge(Qg):
22nC
Mfr. Part #:
ASA60R330E
Package:
TO-220F
Product Description
Product Overview
The ASA60R330E and ASD60R330E are N-Channel Silicon MOSFETs designed for efficient power switching applications. These enhancement-mode devices feature low drain-source on-resistance and are easy to control, making them suitable for boost PFC switches, single-ended flyback converters, half-bridge, asymmetric half-bridge, two-transistor forward, and series resonance half-bridge topologies. Key applications include PC power supplies, PD adapters, LCD & PDP TVs, LED lighting, server power, and UPS systems.
Product Attributes
- Brand: Not specified
- Material: Silicon
- Type: N-Channel MOS
- Mode: Enhancement Mode
Technical Specifications
| Model Name | Package Type | Marking |
|---|---|---|
| ASA60R330E | TO220F | ASA60R330E |
| ASD60R330E | TO252 | ASD60R330E |
| Parameter | Symbol | Value | Unit | Note / Test Condition |
|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 605 | V | VGS=0V, ID=10mA |
| Gate threshold voltage | V(GS)th | 2.8 - 4.2 | V | VDS=VGS, ID=250uA |
| Zero gate voltage drain current | IDSS | - 100 | nA | VDS=600V, VGS=0V, Tj=25C |
| Gate-source leakage current | IGSS | - 100 | nA | VGS=30V, VDS=0V |
| Drain-source on-state resistance | RDS(on) | - 0.305 - 0.33 | VGS=10V, ID=5.5A, Tj=25C | |
| Gate resistance (Intrinsic) | RG | - 10.8 | - | f=1MHz, open drain |
| Input capacitance | Ciss | - 901 | pF | VGS=0V, VDS=50V, f=10kHz |
| Output capacitance | Coss | - 59 | pF | VGS=0V, VDS=50V, f=10kHz |
| Reverse transfer capacitance | Crss | - 5.3 | pF | VGS=0V, VDS=50V, f=10kHz |
| Turn-on delay time | td(on) | - 7.2 | ns | VDD=400V,VGS=13V,ID=4.8A, RG=3.4 |
| Rise time | tr | - 20.8 | ns | VDD=400V,VGS=13V,ID=4.8A, RG=3.4 |
| Turn-off delay time | td(off) | - 29.2 | ns | VDD=400V,VGS=13V,ID=4.8A, RG=3.4 |
| Fall time | tf | - 19.2 | ns | VDD=400V,VGS=13V,ID=4.8A, RG=3.4 |
| Gate to source charge | Qgs | - 5.8 | nC | VDD=400V, ID=4.8A, VGS=0 to 10V |
| Gate to drain charge | Qg d | - 17 | nC | VDD=400V, ID=4.8A, VGS=0 to 10V |
| Gate charge total | Qg | - 22 | nC | VDD=400V, ID=4.8A, VGS=0 to 10V |
| Gate plateau voltage | Vplateau | - 5.3 | V | VDD=400V, ID=4.8A, VGS=0 to 10V |
| Diode forward voltage | VSD | - 0.74 | V | VGS=0V, IF=1A, Tj=25C |
| Reverse recovery time | trr | - 250 | ns | VR=400V, IF=4.8 A, diF/dt=100A/s |
| Reverse recovery charge | Qrr | - 2.572 | uC | VR=400V, IF=4.8 A, diF/dt=100A/s |
| Peak reverse recovery current | Irrm | - 19.6 | A | VR=400V, IF=4.8 A, diF/dt=100A/s |
| Continuous drain current | ID | - 11 | A | TC=25C, Limited by Tj,max. Maximum Duty Cycle D = 0.50 |
| Pulsed drain current | ID,pulse | - 33 | A | TC=25C, Pulse width tp limited by Tj,max |
| Avalanche energy, single pulse | EAS | - 400 | mJ | - |
| MOSFET dv/dt ruggedness | dv/dt | - 70 | V/ns | VDS=0...400V |
| Gate source voltage (static) | VGS | -20 - 20 | V | static |
| Gate source voltage (dynamic) | VGS | -30 - 30 | V | AC (f>1 Hz) |
| Power dissipation (TO220F) | Ptot | - 32 | W | TC=25C |
| Power dissipation (TO252) | Ptot | - 83 | W | TC=25C |
| Storage temperature | Tstg | -55 - 150 | C | - |
| Operating junction temperature | Tj | -55 - 150 | C | - |
| Reverse diode dv/dt | dv/dt | - 15 | V/ns | VDS=0...400V, ISD<=48A, Tj=25C |
| Thermal resistance, junction - case (TO220F) | RthJC | - 3.9 | C/W | - |
| Thermal resistance, junction - ambient (TO220F) | RthJA | - 80 | C/W | device on PCB, minimal footprint |
| Thermal resistance, junction - case (TO252) | RthJC | - 1.5 | C/W | - |
| Thermal resistance, junction - ambient (TO252) | RthJA | - 62 | C/W | device on PCB, minimal footprint |
2410121550_ANHI-ASA60R330E_C5440000.pdf
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