Power Conversion N Channel MOSFET ASD65R850E Featuring Low On Resistance and Fast Switching
Key Attributes
Model Number:
ASD65R850E
Product Custom Attributes
Drain To Source Voltage:
700V
Current - Continuous Drain(Id):
6A
RDS(on):
850mΩ
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3.5V
Reverse Transfer Capacitance (Crss@Vds):
4.55pF
Input Capacitance(Ciss):
377pF
Pd - Power Dissipation:
74W
Gate Charge(Qg):
10.3nC
Mfr. Part #:
ASD65R850E
Package:
TO-252
Product Description
Product Overview
The ASA65R850E, ASU65R850, and ASD65R850E are N-Channel Silicon MOSFETs designed for high-efficiency power conversion applications. These devices offer a low drain-source on-resistance (RDS(on)) and are easy to control via gate switching. Key applications include boost PFC switches, single-ended flyback and two-transistor forward topologies, PC power supplies, PD adaptors, and LCD & PDP TVs and LED lighting.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Silicon
- Type: N-Channel MOS
Technical Specifications
| Model | Package | VDS @ Tj,max (V) | RDS(on),max () | Qg,typ (nC) | ID,pulse (A) |
|---|---|---|---|---|---|
| ASA65R850E | TO220F | 700 | 0.850 | 10.3 | 18 |
| ASU65R850 | TO251 | 700 | 0.850 | 10.3 | 18 |
| ASD65R850E | TO252 | 700 | 0.850 | 10.3 | 18 |
| Parameter | Symbol | Value | Unit | Note / Test Condition |
|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 655 | V | VGS=0V, ID=10mA |
| Gate threshold voltage | V(GS)th | 2.8 - 4.2 | V | VDS=VGS, ID=250uA |
| Zero gate voltage drain current | IDSS | - 100 | nA | VDS=650V, VGS=0V, Tj=25C |
| Gate-source leakage current | IGSS | - 100 | nA | VGS=30V, VDS=0V |
| Drain-source on-state resistance | RDS(on) | - 0.75 - 0.85 | VGS=10V, ID=2.5A, Tj=25C | |
| Continuous drain current | ID | - 6 | A | TC=25C, Limited by Tj,max, Max Duty Cycle D = 0.50 |
| Pulsed drain current | ID,pulse | - 18 | A | TC=25C, Pulse width tp limited by Tj,max |
| Avalanche energy, single pulse | EAS | - 624 | mJ | |
| MOSFET dv/dt ruggedness | dv/dt | - 36 | V/ns | VDS=0...400V |
| Gate source voltage (static) | VGS | -20 - 20 | V | static |
| Gate source voltage (dynamic) | VGS | -30 - 30 | V | AC (f>1 Hz) |
| Power dissipation (TO220F) | Ptot | - 27 | W | TC=25C |
| Power dissipation (TO252&TO251) | Ptot | - 74 | W | TC=25C |
| Storage temperature | Tstg | -55 - 150 | C | |
| Operating junction temperature | Tj | -55 - 150 | C | |
| Reverse diode dv/dt | dv/dt | - 15 | V/ns | VDS=0...400V, ISD<=48A, Tj=25C |
| Thermal resistance, junction - case (TO220 FullPAK) | RthJC | - 4.6 | C/W | |
| Thermal resistance, junction - ambient (TO220 FullPAK) | RthJA | - 80 | C/W | device on PCB, minimal footprint |
| Thermal resistance, junction - case (TO251 & TO252) | RthJC | - 1.7 | C/W | |
| Thermal resistance, junction - ambient (TO251 & TO252) | RthJA | - 62 | C/W | device on PCB, minimal footprint |
| Input capacitance | Ciss | - 377 | pF | VGS=0V, VDS=50V, f=10kHz |
| Output capacitance | Coss | - 33 | pF | VGS=0V, VDS=50V, f=10kHz |
| Reverse transfer capacitance | Crss | - 4.55 | pF | VGS=0V, VDS=50V, f=10kHz |
| Turn-on delay time | td(on) | - 8.4 | ns | VDD=400V,VGS=13V,ID=2.5A, RG=6.8 |
| Rise time | tr | - 21.6 | ns | VDD=400V,VGS=13V,ID=2.5A, RG=6.8 |
| Turn-off delay time | td(off) | - 45.2 | ns | VDD=400V,VGS=13V,ID=2.5A, RG=6.8 |
| Fall time | tf | - 24.4 | ns | VDD=400V,VGS=13V,ID=2.5A, RG=6.8 |
| Gate to source charge | Qgs | - 1.845 | nC | VDD=400V, ID=2.5A, VGS=0 to 10V |
| Gate to drain charge | Qgd | - 2.723 | nC | VDD=400V, ID=2.5A, VGS=0 to 10V |
| Gate charge total | Qg | - 10.3 | nC | VDD=400V, ID=2.5A, VGS=0 to 10V |
| Gate plateau voltage | Vplateau | - 6.4 | V | VDD=400V, ID=2.5A, VGS=0 to 10V |
| Diode forward voltage | VSD | - 0.78 | V | VGS=0V, IF=1A, Tj=25C |
| Reverse recovery time | trr | - 124 | ns | VR=400V, IF=2.5 A, diF/dt=100A/s |
| Reverse recovery charge | Qrr | - 0.88 | uC | VR=400V, IF=2.5 A, diF/dt=100A/s |
| Peak reverse recovery current | Irrm | - 10 | A | VR=400V, IF=2.5 A, diF/dt=100A/s |
2410121550_ANHI-ASD65R850E_C5440012.pdf
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