30V N channel and P channel MOSFET ASDsemi ASDM4606S R lead free package designed for load switching
Product Overview
The ASDM4606S is a 30V N-channel and P-channel MOSFET designed for high power and current handling capabilities. It is a lead-free product suitable for PWM applications, load switching, and power management. The MOSFET is available in a SOP-8 surface mount package.
Product Attributes
- Brand: Ascend Semiconductor Co., Ltd.
- Product Type: N AND P-Channel MOSFET
- Package Type: SOP-8
- Lead Free: Yes
- Date: NOV 2018
- Version: 1.0
Technical Specifications
| Parameter | Symbol | Condition | N-Channel Min | N-Channel Typ | N-Channel Max | N-Channel Unit | P-Channel Min | P-Channel Typ | P-Channel Max | P-Channel Unit |
|---|---|---|---|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (TA=25 unless otherwise noted) | ||||||||||
| Drain-Source Voltage | VDS | 30 | V | -30 | V | |||||
| Gate-Source Voltage | VGS | 20 | V | 20 | V | |||||
| Continuous Drain Current | ID | 8 | A | -6 | A | |||||
| Pulsed Drain Current (Note 1) | IDM | 25 | A | -20 | A | |||||
| Maximum Power Dissipation | PD | 2.5 | W | 2.5 | W | |||||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | -55 | 150 | |||||
| Electrical Characteristics (TA=25 unless otherwise noted) | ||||||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 30 | 33 | V | -30 | -33 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=24V,VGS=0V | - | 1 | A | - | -1 | A | ||
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | - | 100 | nA | - | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 1 | 1.6 | 3 | V | -1 | -1.5 | -2 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=6A | 17 | 21 | m | VGS=-10V, ID=-5A | 42 | 52 | m | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V, ID=4A | 24 | 31 | m | VGS=-4.5V, ID=-4A | 61 | 77 | m | |
| Forward Transconductance | gFS | VDS=5V,ID=5A | 15 | - | S | VDS=-5V,ID=-4.1A | 5.5 | - | S | |
| Dynamic Characteristics (Note 4) | ||||||||||
| Input Capacitance | Clss | 480 | - | PF | 648 | - | PF | |||
| Output Capacitance | Coss | 80 | - | PF | 108 | - | PF | |||
| Reverse Transfer Capacitance | Crss | VDS=15V,VGS=0V, F=1.0MHz | 60 | - | PF | VDS=-15V,VGS=0V, F=1.0MHz | 68 | - | PF | |
| Switching Characteristics (Note 4) | ||||||||||
| Turn-on Delay Time | td(on) | VDD=15V, RL=3, VGS=10V,RGEN=3 | 4.5 | - | nS | VDD=-15V,RL=3.6, VGS=-10V,RGEN=3 | 9 | - | nS | |
| Turn-on Rise Time | tr | 2.5 | - | nS | 5 | - | nS | |||
| Turn-Off Delay Time | td(off) | 14.5 | - | nS | 28 | - | nS | |||
| Turn-Off Fall Time | tf | 3.5 | - | nS | 13.5 | - | nS | |||
| Total Gate Charge | Qg | 5.2 | - | nC | 14 | - | nC | |||
| Gate-Source Charge | Qgs | 0.85 | - | nC | 3.1 | - | nC | |||
| Gate-Drain Charge | Qg | VDS=15V,ID=5A, VGS=10V | 1.3 | - | nC | VDS=-15V,ID=-4A,VGS=-10V | 3 | - | nC | |
| Drain-Source Diode Characteristics | ||||||||||
| Diode Forward Voltage | VSD | VGS=0V,IS=3A | - | 1.3 | V | VGS=0V,IS=-1A | - | -1.3 | V | |
| Diode Forward Current | IS | (Note 2) | - | 4 | A | - | -4 | A | ||
| Thermal Characteristic | ||||||||||
| Thermal Resistance, Junction-to-Ambient | RJA | (Note2) | 89 | - | /W | 90 | - | /W | ||
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300s, Duty Cycle 2%.
4. Guaranteed by design, not subject to production.
Ordering and Marking Information
| PACKAGE | MARKING | Device No. | Package | Packing | Quantity |
|---|---|---|---|---|---|
| SOP-8 | 4606 | ASDM4606S | SOP-8 | Tape&Reel | 4000 |
2410121930_ASDsemi-ASDM4606S-R_C2758241.pdf
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