30V N channel and P channel MOSFET ASDsemi ASDM4606S R lead free package designed for load switching

Key Attributes
Model Number: ASDM4606S-R
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
21mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
68pF
Number:
1 N-Channel + 1 P-Channel
Output Capacitance(Coss):
108pF
Input Capacitance(Ciss):
648pF
Pd - Power Dissipation:
2.5W
Gate Charge(Qg):
14nC@10V
Mfr. Part #:
ASDM4606S-R
Package:
SOP-8
Product Description

Product Overview

The ASDM4606S is a 30V N-channel and P-channel MOSFET designed for high power and current handling capabilities. It is a lead-free product suitable for PWM applications, load switching, and power management. The MOSFET is available in a SOP-8 surface mount package.

Product Attributes

  • Brand: Ascend Semiconductor Co., Ltd.
  • Product Type: N AND P-Channel MOSFET
  • Package Type: SOP-8
  • Lead Free: Yes
  • Date: NOV 2018
  • Version: 1.0

Technical Specifications

Parameter Symbol Condition N-Channel Min N-Channel Typ N-Channel Max N-Channel Unit P-Channel Min P-Channel Typ P-Channel Max P-Channel Unit
Absolute Maximum Ratings (TA=25 unless otherwise noted)
Drain-Source Voltage VDS 30 V -30 V
Gate-Source Voltage VGS 20 V 20 V
Continuous Drain Current ID 8 A -6 A
Pulsed Drain Current (Note 1) IDM 25 A -20 A
Maximum Power Dissipation PD 2.5 W 2.5 W
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 -55 150
Electrical Characteristics (TA=25 unless otherwise noted)
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250A 30 33 V -30 -33 V
Zero Gate Voltage Drain Current IDSS VDS=24V,VGS=0V - 1 A - -1 A
Gate-Body Leakage Current IGSS VGS=20V,VDS=0V - 100 nA - 100 nA
Gate Threshold Voltage VGS(th) VDS=VGS,ID=250A 1 1.6 3 V -1 -1.5 -2 V
Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=6A 17 21 m VGS=-10V, ID=-5A 42 52 m
Drain-Source On-State Resistance RDS(ON) VGS=4.5V, ID=4A 24 31 m VGS=-4.5V, ID=-4A 61 77 m
Forward Transconductance gFS VDS=5V,ID=5A 15 - S VDS=-5V,ID=-4.1A 5.5 - S
Dynamic Characteristics (Note 4)
Input Capacitance Clss 480 - PF 648 - PF
Output Capacitance Coss 80 - PF 108 - PF
Reverse Transfer Capacitance Crss VDS=15V,VGS=0V, F=1.0MHz 60 - PF VDS=-15V,VGS=0V, F=1.0MHz 68 - PF
Switching Characteristics (Note 4)
Turn-on Delay Time td(on) VDD=15V, RL=3, VGS=10V,RGEN=3 4.5 - nS VDD=-15V,RL=3.6, VGS=-10V,RGEN=3 9 - nS
Turn-on Rise Time tr 2.5 - nS 5 - nS
Turn-Off Delay Time td(off) 14.5 - nS 28 - nS
Turn-Off Fall Time tf 3.5 - nS 13.5 - nS
Total Gate Charge Qg 5.2 - nC 14 - nC
Gate-Source Charge Qgs 0.85 - nC 3.1 - nC
Gate-Drain Charge Qg VDS=15V,ID=5A, VGS=10V 1.3 - nC VDS=-15V,ID=-4A,VGS=-10V 3 - nC
Drain-Source Diode Characteristics
Diode Forward Voltage VSD VGS=0V,IS=3A - 1.3 V VGS=0V,IS=-1A - -1.3 V
Diode Forward Current IS (Note 2) - 4 A - -4 A
Thermal Characteristic
Thermal Resistance, Junction-to-Ambient RJA (Note2) 89 - /W 90 - /W

Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300s, Duty Cycle 2%.
4. Guaranteed by design, not subject to production.

Ordering and Marking Information

PACKAGE MARKING Device No. Package Packing Quantity
SOP-8 4606 ASDM4606S SOP-8 Tape&Reel 4000

2410121930_ASDsemi-ASDM4606S-R_C2758241.pdf

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