Power management MOSFET ASDsemi ASDM30N90KQ-R featuring low gate charge and 30V drain source voltage
Key Attributes
Model Number:
ASDM30N90KQ-R
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
90A
Operating Temperature -:
-55℃~+175℃
RDS(on):
4.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
253pF
Number:
-
Output Capacitance(Coss):
307pF
Input Capacitance(Ciss):
2.12nF
Pd - Power Dissipation:
65W
Gate Charge(Qg):
40nC@10V
Mfr. Part #:
ASDM30N90KQ-R
Package:
TO-252
Product Description
Product Overview
The Ascend Semiconductor ASDM30N90KQ is a 30V N-Channel MOSFET designed for efficient power management. It features advanced trench technology, providing excellent RDS(ON) and low gate charge for optimal performance. This MOSFET offers high power and current handling capabilities, making it suitable for load switch and PWM applications.
Product Attributes
- Brand: Ascend Semiconductor
- Product Line: ASDM
- Technology: Advanced Trench Technology
- Channel Type: N-Channel
Technical Specifications
| Parameter | Symbol | Conditions | Minimum | Typical | Maximum | Units |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| RDS(on) @ VGS=10V | RDS(on),Typ. | VGS=10 V | 3.6 | m | ||
| Continuous Drain Current | ID | TC =25C | 90 | A | ||
| TC =100C | 46 | A | ||||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (TA =25C unless otherwise noted) | 30 | V | ||
| Gate-Source Voltage | VGS | (TA =25C unless otherwise noted) | 20 | V | ||
| Continuous Drain Current | ID | TC =25C | 90 | A | ||
| TC =100C | 46 | A | ||||
| Pulsed Drain Current | IDM | 255 | A | |||
| Avalanche Current | IS | 90 | A | |||
| Single Pulse Avalanche Energy | EAS | L =0.3mH | 135 | mJ | ||
| Power Dissipation | PD | TC =25C | 65 | W | ||
| TC =100C | 32 | W | ||||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 175 | C | ||
| Thermal Characteristics | ||||||
| Maximum Junction-to-Case Steady-State | RJC | 2.3 | C/W | |||
| Maximum Junction-to-Ambient Steady-State | RJA | 100 | C/W | |||
| Electrical Characteristics (TJ =25C unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID =250A,VGS =0V | 30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS =30V, VGS =0V, TJ =25C | 1 | A | ||
| VDS =30V, VGS =0V, TJ =125C | 25 | A | ||||
| Gate-Body Leakage Current | IGSS | VDS =0V, VGS =20V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS =VGS, ID =250A | 1 | 1.6 | 2.4 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V, ID =30A | 3.6 | 4.5 | m | |
| VGS =4.5V, ID =30A | 6.9 | 9.0 | m | |||
| Forward Transconductance | gFS | VDS =10V, ID =20A | 16 | S | ||
| Diode Forward Voltage | VSD | IS =30A, VGS =0V | 1 | V | ||
| Maximum Body-Diode Continuous Current | IS | 90 | A | |||
| Dynamic Parameters | ||||||
| Input Capacitance | Ciss | VGS =0V, VDS =15V, f =1MHZ | 2120 | pF | ||
| Output Capacitance | Coss | VGS =0V, VDS =15V, f =1MHZ | 307 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS =0V, VDS =15V, f =1MHZ | 253 | pF | ||
| Switching Parameters | ||||||
| Total Gate Charge | Qg | VGS =10V,VDS =15V, ID =30A | 40 | nC | ||
| Gate Source Charge | Qgs | VGS =10V,VDS =15V, ID =30A | 5.4 | nC | ||
| Gate Drain Charge | Qgd | VGS =10V,VDS =15V, ID =30A | 9.6 | nC | ||
| Turn-On Delay Time | tD(on) | VGS =10V,VDS =15V, ID =20A, RG =3 | 15 | ns | ||
| Turn-On Rise Time | tr | VGS =10V,VDS =15V, ID =20A, RG =3 | 32 | ns | ||
| Turn-Off Delay Time | tD(off) | VGS =10V,VDS =15V, ID =20A, RG =3 | 15 | ns | ||
| Turn-Off Fall Time | tf | VGS =10V,VDS =15V, ID =20A, RG =3 | 12 | ns | ||
| Body Diode Reverse Recovery Time | trr | IF =30A, di/dt =100A/s | 23 | ns | ||
| Body Diode Reverse Recovery Charge | Qrr | IF =30A, di/dt =100A/s | 48 | nC | ||
| Ordering and Marking Information | ||||||
| Model | ASDM30N90KQ | |||||
| Package | TO-252 | |||||
| Marking | 30N90 | |||||
| Packing | Tape&Reel | 2500/Reel | ||||
2410121653_ASDsemi-ASDM30N90KQ-R_C2758223.pdf
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