N Channel MOSFET AUR030N10 for dc dc conversion and synchronous rectification in industrial applications
Key Attributes
Model Number:
AUR030N10
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
195A
Operating Temperature -:
-55℃~+175℃
RDS(on):
3mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
280pF
Number:
1 N-channel
Output Capacitance(Coss):
-
Pd - Power Dissipation:
330W
Input Capacitance(Ciss):
10nF
Gate Charge(Qg):
138nC@10V
Mfr. Part #:
AUR030N10
Package:
TOLL
Product Description
Product Overview
The AUP034N10, AUB034N10, and AUR030N10 are N-Channel Silicon MOSFETs designed for high-performance applications. They are particularly suited for synchronous rectification in Switched-Mode Power Supplies (SMPS), and for hard switching and high-speed DC/DC conversion circuits in telecommunications and industrial sectors. Key features include low drain-source on-resistance, high-speed power switching, an enhanced body diode with dv/dt capability, and improved avalanche ruggedness.
Product Attributes
- Type: N-Channel MOS
- Material: Silicon
Technical Specifications
| Part Name | Package | Marking | VDS @ Tj,max (V) | RDS(on),max TO220&TO263 (m) | RDS(on),max TOLL (m) | Qg,typ (nC) | ID,pulse (A) |
|---|---|---|---|---|---|---|---|
| AUP034N10 | TO220 | AUP034N10 | 100 | 3.4 | - | 138 | 856 |
| AUB034N10 | TO263 | AUB034N10 | 100 | 3.4 | - | 138 | 856 |
| AUR030N10 | TOLL | AUR030N10 | 100 | - | 3.0 | 138 | 856 |
| Parameter | Symbol | Values (Unit) | Note / Test Condition |
|---|---|---|---|
| Continuous drain current at silicon | ID | - 214 A (TC=25C) | Limited by Tj,max |
| Continuous drain current at package | ID | - 195 A (TC=25C) | Limited by Tj,max |
| Continuous drain current at silicon | ID | 151 A (TC=100C) | Limited by Tj,max |
| Pulsed drain current | ID,pulse | - 856 A (TC=25C) | Pulse width tp limited by Tj,max |
| Avalanche energy, single pulse | EAS | - 512 mJ | Tc=25,VDD=40V,Vgs=10V, L=1mH, RG=25 |
| Avalanche current, single pulse | IAR | - 32 A | Tc=25, VDD=40V, L=1mH, RG=25 |
| Gate source voltage (static) | VGS | -20 to 20 V | static |
| Power dissipation | Ptot | - 330 W | TC=25C |
| Storage temperature | Tstg | -55 to 175 C | |
| Operating junction temperature | Tj | -55 to 175 C | |
| Soldering Temperature | TL | 300 C | Distance of 1.6mm from case for 10s |
| Drain-source breakdown voltage | V(BR)DSS | 100 V | VGS=0V, ID=250uA |
| Gate threshold voltage | V(GS)th | 2 to 4 V | VDS=VGS, ID=250uA |
| Zero gate voltage drain current | IDSS | - 1 uA | VDS=100V, VGS=0V, Tj=25C |
| Gate-source leakage current | IGSS | - +/-100 nA | VGS=+/-20V, VDS=0V |
| Drain-source on-state resistance (TO220&TO263) | RDS(on) | 2.8 to 3.4 m | VGS=10V, ID=20A, Tj=25C |
| Drain-source on-state resistance (TOLL) | RDS(on) | 2.4 to 3.0 m | VGS=10V, ID=20A, Tj=25C |
| Gate resistance (Intrinsic) | RG | 2.6 | f=1MHz, open drain |
| Transconductance | Gfs | 197.2 S | VDS=5V, ID=90A |
| Input capacitance | Ciss | - 10000 pF | VGS=0V, VDS=25V, f=1MHz |
| Output capacitance | Coss | - 2900 pF | VGS=0V, VDS=25V, f=1MHz |
| Reverse transfer capacitance | Crss | - 280 pF | VGS=0V, VDS=25V, f=1MHz |
| Turn-on delay time | td(on) | - 38 ns | VDD=50V,VGS=10V,ID=80A, RG=2.5 |
| Rise time | tr | - 50 ns | VDD=50V,VGS=10V,ID=80A, RG=2.5 |
| Turn-off delay time | td(off) | - 69 ns | VDD=50V,VGS=10V,ID=80A, RG=2.5 |
| Fall time | tf | - 33 ns | VDD=50V,VGS=10V,ID=80A, RG=2.5 |
| Gate to source charge | Qgs | - 58 nC | VDD=50V, ID=80A, VGS=10V |
| Gate to drain charge | Qgd | - 44 nC | VDD=50V, ID=80A, VGS=10V |
| Gate charge total | Qg | - 138 nC | VDD=50V, ID=80A, VGS=10V |
| Continuous Source Current at silicon | ISD | - 214 A | |
| Diode forward voltage | VSD | - 1.2 V | VGS=0V, Is=80A, Tj=25C |
| Reverse recovery time | trr | - 95 ns | Vgs=0V, IF=80A, diF/dt=100A/s |
| Reverse recovery charge | Qrr | - 143 nC | Vgs=0V, IF=80A, diF/dt=100A/s |
| Package | Thermal resistance, junction - case (RthJC) (C/W) | Thermal resistance, junction - ambient (RthJA) (C/W) |
|---|---|---|
| TO263&TO252 | - 0.46 | - 63 (device on PCB, minimal footprint) |
| TOLL | - 0.28 | - 48 (device on PCB, minimal footprint) |
2410121510_ANHI-AUR030N10_C19192885.pdf
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